Fairchild Semiconductor BD236, BD234, BD238 Datasheet
BD234/236/238
Medium Power Linear and Switching
Applications
• Complement to BD 233/235/237 respectively
BD234/236/238
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VCER
VEBO
IC
ICP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage - 5 V
Collector Current (DC) - 2 A
*Collector Current (Pulse) - 6 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
I
CBO
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = - 1A , IB = - 0.1A - 0.6 V
VCE
(on) * Base-Emitter ON Volt age V
V
BE
f
T
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
: BD234
: BD236
: BD238
: BD234
: BD236
: BD238
: BD234
: BD236
: BD238
TC=25°C unless otherwise noted
: BD234
: BD236
= - 100mA, IB = 0 - 45
I
C
: BD238
: BD234
: BD236
: BD238
= - 45V, IE = 0
V
CB
V
= - 60V, IE = 0
CB
= - 100V, IE = 0
V
CB
= - 5V , IC = 0 - 1 mA
EB
= - 2V, IC = - 150mA
CE
= - 2V, IC = - 1A
V
CE
= - 2V, IC = - 1A - 1.3 V
CE
= - 10V, IC = -250mA 3 MHz
CE
- 45
- 60
- 100
- 45
- 60
- 80
- 45
- 60
- 100
- 60
- 80
- 100
- 100
- 100
40
25
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
BD234/236/238
-1000
-100
-10
, DC CURRENT GAIN
FE
h
-1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Satu rati on Volta ge
-10
IC MAX. (Pulsed)
IC MAX. (Continuous)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1ms
DC
BD234
VCE = -2V
10µs
100
µ
s
BD236
BD238
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10
VBE(sat)
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 7 5 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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