Fairchild Semiconductor BD235, BD233 Datasheet
BD233/235/237
Medium Power Linear and Switching
Applications
• Complement to BD 234/236/238 respectively
BD233/235/237
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VCER
VEBO
IC
ICP
P
C
T
J
T
STG
Collector-Base Voltage : BD233
Collector-Emitter Voltage : BD233
Collector-Emitter Voltage : BD233
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 6 A
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) * Collector-Emitter Sustaining Voltage
CEO
I
CBO
IEBO
hFE
(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A 0.6 V
VCE
(on) * Base-Emitter ON Volt age V
V
BE
f
T
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Collector Cut-off Current
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
: BD235
: BD237
: BD235
: BD237
: BD235
: BD237
TC=25°C unless otherwise noted
: BD233
I
= 100mA, IB = 0 45
C
: BD235
: BD237
: BD233
: BD235
: BD237
V
= 45V, IE = 0
CB
= 60V, IE = 0
V
CB
= 100V, IE = 0
V
CB
= 5V, IC = 0 1 mA
EB
= 2V, IC = 150mA
CE
V
= 2V, IC = 1A
CE
= 2V, IC = 1A 1.3 V
CE
= 10V, IC = 250mA 3 MHz
CE
45
60
100
45
60
80
45
60
100
60
80
100
100
100
40
25
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Typical Characteristics
BD233/235/237
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10
IC MAX. (Pulsed)
IC MAX. (Continuous)
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1ms
DC
VCE = 2V
10µs
100
µ
BD235
BD233
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10
VBE(sat)
VCE(sat)
IC = 10 I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
40
35
s
BD237
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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