Fairchild Semiconductor BCX79 Datasheet
BCX79
BCX79
Discrete POWER & Signal
Technologies
E
B
C
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 68. See PN200A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 45 V
Collector-Base Voltage 45 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
Symbol Characteristic Max Units
BCX79
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipa tion
Derate above 25°C
Ther mal Resistance, Junction to Case 83.3
Thermal Resistan ce, Junction to Ambient 200
625
5.0
mW
mW/°C
C/W
°
C/W
°
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CES
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 045V
Emitter-Base Breakdown Volta ge
I
= 1.0 µA, IC = 0
E
Collector Cutoff Current VCE = 45 V, VBE = 0.2 V,
T
= +100 °C
A
Collector Cutoff Current VCE = 45 V, IE = 0,
V
= 45 V, IE = 0, TA = +125 °C
CE
5.0 V
20
10
2.5
µ
nA
µ
A
A
Emitter Cutoff Current VEB = 4.0 V, IC = 0 20 nA
DC Current Gain VCE = 5.0 V, IC = 2.0 mA
V
= 1.0 V, IC = 10 mA
CE
V
= 1.0 V, IC = 100 mA
Collector-Emitte r Saturation Voltage IC = 100 mA, IB = 2.5 mA 0.6 V
)
Base-Emitter Saturation Voltage IC = 100 mA, IB = 2.5 mA 1.0 V
)
CE
Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA
V
= 1.0 V, IC = 100 mA
CE
120
80
630
1,000
40
0.6 0.7
0.9
V
V
BCX79
SMALL SIGNAL CHARACTERISTICS
C
cb
C
eb
h
ie
h
oe
NF Noise Figure VCE = 5.0 V, IC = 0.2 mA,
Collector-Base Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF
Emitter-Base Capacitance VEB = 0.5 V, f = 1.0 MHz 15 pF
Input Impedance IC = 2.0 mA, VCE = 5.0 V,
f = 1.0 kHz
Output Admittance IC = 2.0 mA, VCE = 5.0 V,
f = 1.0 kHz
R
= 2.0 kΩ, f = 1.0 kHz
S
SWITCHING CHARACTERISTICS
t
on
t
on
t
off
t
off
Turn-on Time VCC = 10 V, IC = 10 mA,
V
= 3.6 V, IB1 = IB2 = 1.0 mA
BB
Turn-on Time VCC = 10 V, IC = 100 mA,
= 5.0 V, IB1 = IB2 = 10 mA
V
BB
Turn-o ff Time VCC = 10 V, IC = 10 mA,
V
= 3.6 V, IB1 = IB2 = 1.0 mA
BB
Turn-o ff Time VCC = 10 V, IC = 100 mA,
= 5.0 V, IB1 = IB2 = 10 mA
V
BB
1.6 8.5
100
6.0 dB
150 ns
150 ns
800 ns
800 ns
mhos
µ
k
Ω
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