Fairchild Semiconductor BCX19 Datasheet
BCX19
NPN Medium Power Transistor
• This device is designed for general purpose amplifiers.
• Sourced from process 38.
3
2
SOT-23
1
Mark: U1
1. Base 2. Emitter 3. Collector
BCX19
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
Electrical Characteristics
Collector-Emitter Voltage 45 V
Collector-Base Voltage 50 V
Emitter-Base Voltage 5.0 V
Collector current - Continuous 500 mW
Junction and Storage Temperature -55 ~ +150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
V
(BR)CES
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 45 V
Collector-Emitter Breakdown Voltage IC = 10µA, IC = 0 50 V
Collector Cutoff Current VCB = 20V, IE = 0
= 20V, IE = 0, TA = 150°C
V
CB
100
5.0nAµA
Emitter Cutoff Current VEB = 5.0V, IC = 0 10 µA
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
Thermal Characteristics
DC Current Gain IC = 100mA, VCE = 1.0V
I
= 300mA, VCE = 1.0V
C
= 500mA, VCE = 1.0V
I
C
100
70
40
600
Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 0.62 V
Base-Emitter On Voltage IC = 500mA, VCE = 1.0V 1.2 V
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
300
2.4
Thermal Resistance, Junction to Ambient 417 °C/W
mW
mW/°C
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
Package Dimensions
0.40
±0.03
BCX19
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
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