Fairchild Semiconductor BCW60D, BCW60C, BCW60B Datasheet
BCW60A/B/C/D
General Purpose Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
BCW60A/B/C/D
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage 32 V
Collector-Emitter Voltage 32 V
Emitter-Base Voltage 5 V
Collector Current 100 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Ta=25°C unless otherwise noted
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BCW60A/B/C/D
Electrical Characteristics T
=25°C unless otherwise noted
a
Symbol Parameter Tes t Condition Min. Max. Units
BV
CEO
BV
EBO
I
CES
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=50mA, IB=1.25mA
V
CE
(sat) Base-Emitter Saturation Voltage IC=50mA, IB=1.25mA
V
BE
(on) Base-Emitter On Voltage VCE=5V, IC=2mA 0.55 0.75 V
V
BE
C
ob
f
T
NF Noise Figure I
t
ON
t
OFF
Collector-Emitter Breakdown Voltage IC=2mA, IB=0 32 V
Emitter-Base Breakdown Voltage IE=1µA, IC=0 5 V
Collector Cut-off Current VCE=32V, VBE=0 20 nA
Emitter Cut-off Current VEB=4V, IC=0 20 nA
DC Current Gain
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
: BCW60A
: BCW60B
: BCW60C
: BCW60D
=5V, IC=10µA
V
CE
=5V, IC=2mA
V
CE
V
=1V, IC=50mA
CE
20
40
100
120
180
250
380
60
70
90
100
220
310
460
630
0.55
=10mA, IB=0.25mA
I
C
=10mA, IB=0.25mA
I
C
0.7
0.6
0.35
1.05
0.85
Output Capacitance VCB=10V, IE=0, f=1MHz 4.5 pF
Current Gain Bandwidth Product IC=10mA, VCE=5V, f=100MHz 125 MHz
=0.2mA, VCE=5V
C
R
=2KΩ, f=1KHz
G
6dB
Turn On Time IC=10mA, IB1=1mA 150 ns
Turn Off Time VBB=3.6V, IB2=1mA
R1=R2=5KΩ,R
=990Ω
L
800 ns
V
V
V
V
Marking Code
Type BCW60A BCW60B BCW60C BCW 60D
Mark. AA AB AC AD
Marking
AA
©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
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