Fairchild Semiconductor BCW32 Datasheet
BCW32
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
currents to 300mA.
• Sourced from process 10.
3
2
SOT-23
1
Mark: D2
1. Base 2. Emitter 3. Collector
BCW32
Absolute Maximum Ratings * T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Collector-Emitter Voltage 32 V
Collector-Base Voltage 32 V
Emitter-Base Voltage 5.0 V
Collector current (DC) 500 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-Base Breakdown Voltage IC = 2.0mA, IB = 0 32 V
Collector-Emitter Breakdown Voltage IC = 10µA, IB = 0 32 V
Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 5.0 V
Collector Cutoff Current VCB = 32V, IE = 0
= 32V, IE = 0, TA = 100°C
V
CB
10010nA
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
DC Current Gain IC = 2.0mA, VCE = 5.0V 200 450
Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.25 V
Base-Emitter On Voltage IC = 2.0mA, VCE = 5.0V 0.55 0.7 V
Small Signal Characteristics
f
T
C
obo
NF Noise Figure I
Current Gain Bandwidth Product IC = 2.0mA, VCE = 5.0V
200
f = 35MHz
Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 4.0 pF
= 0.2mA, VCE = 5.0V
C
= 2.0kΩ, f = 1.0kHz
R
S
= 200Hz
B
W
10 dB
µA
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
Device mounted on FR-4PCB 40mm × 40mm × 1.5mm
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Thermal Resistance, Junction to Ambient 357 °C/W
Typical Characteristics
0.1 1 10 100
0.1
1
10
100
V - COLLECTOR VOLTAGE (V)
CAPA CITANCE (pF)
Cib
Cob
f = 1.0 MHz
ce
BCW32
400
125
°C
캜캜캜캜
Vce = 5V
300
캜캜캜캜
°C
25
200
캜캜캜캜
- 40
°C
100
0
FE
10 20 30 50 100 200 300 500
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
Figure 1. Typical Pulsed Current Gain vs
Collector Current
1
°°°°C
캜캜캜캜
- 40
0.8
°°°°C
캜캜캜캜
0.6
0.4
25
125
캜캜캜캜
°°°°C
β
β = 10
β β
0.2
0.1 1 10 100 300
BESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
0.4
β
β
= 10
β β
0.3
캜캜캜캜
°°°°C
25
0.2
캜캜캜캜
°°°°C
0.1
1 10 100 400
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
125
- 40
캜캜캜캜
°°°°C
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
°°°°C
캜캜캜캜
0.8
0.6
0.4
- 40
25
V = 5V
CE
캜캜캜캜
°°°°C
125
캜캜캜캜
°°°°C
0.2
BEON
V - BASE-EMITTER ON VOLTAGE (V)
1 10 100 500
I - COLLECTOR CURRENT (mA)
C
Figure 4. Base-Emitter On Voltage
vs Collector Current
10
V = 60V
CB
1
CBO
I - COLLECTOR CURRENT (nA)
0.1
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
°
Figure 6. Input and Outtput Capacitance
vs Reverse Voltage
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