Fairchild Semiconductor BCW30 Datasheet
BCW30
C
E
B
SOT-23
Mark: C2
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
BCW30
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 32 V
Collector-Emitter Voltage 32 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BCW30
P
D
R
θ
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Total Device Dissipa tion
Derate above 25°C
Thermal Resistan ce, Junction to Ambient 357
350
2.8
mW
mW/°C
C/W
°
1997 Fairchild Semiconductor Corporation
W30, Rev B
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
NF Noise Figure
Collector-Base Breakd own Voltage
I
= 10 µA, IE = 0
C
32 V
Collector-Emitter Breakdown Vo ltage IC = 2.0 mA, IB = 0 32 V
Collector-Emitter Breakdown Vo ltage
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
32 V
5.0 V
Collector-Cutoff Current VCB = 32 V, IE = 0
V
= 32 V, IE = 0, TA = +100 °C
CB
DC Current Gain VCE = 5.0 V, IC = 2.0 mA 215 500
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.30 V
)
Base-Emitt er On Vol tage VCE = 5.0 V, IC = 2.0 mA 0.60 0.75 V
= 5.0 V, IC = 200 µA,
V
CE
= 2.0 kΩ, f = 1.0 kHz,
R
S
= 200 Hz
B
W
100
10
10 dB
nA
µ
BCW30
A
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