Fairchild Semiconductor BCV27 Datasheet
BCV27
C
E
SOT-23
Mark: FF
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
B
BCV27
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 30 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 10 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
*BCV27
P
D
R
θ
JA
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
)
V
sat
BE(
)
SMALL SIGNAL CHARACTERISTICS
f
T
C
C
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage IE = 100 nA, IC = 0 10 V
Collector-Cutoff Current VCB = 30 V, IE = 0 0.1
Em i t ter - Cutoff C u r rent VEB = 10 V, IC = 0 0.1
DC Cu r re n t Ga in IC = 1.0 m A, VCE = 5.0 V
= 10 mA, VCE = 5.0 V
I
C
I
= 100 mA, VCE = 5.0 V
C
4,000
10,000
20,000
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V
Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
Current Gain - Bandwidth Product IC = 30 mA, VCE = 5.0 V,
220 MHz
f = 10 0 M Hz
Colle c tor Capac i t anc e VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF
BCV27
µ
A
µ
A
Typical Characteristics
Ty pical Pulsed Current Gain
vs Co ll ector Current
250
V = 5V
200
CE
150
100
50
0
0.001 0.01 0.1 1
FE
h - TYPICAL PULSED CURRENT GAIN (K)
- 40 °C
25 °C
I - COLLECTOR CURRENT (A)
C
125 °C
Collector -Em itter Saturation
Volta g e vs Co llector Cu rren t
1.6
ββ
= 1000
1.2
- 40 ºC
0.8
0.4
0
1 10 100 1000
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
I - COLLE CT O R CURRENT (mA)
C
25°C
125 ºC
Loading...