Fairchild Semiconductor BCV26 Datasheet
BCV26
C
BCV26
Discrete POWER & Signal
Technologies
E
SOT-23
Mark: FD
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 30 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 10 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
Symbol Characteristic Max Units
*BCV26
P
D
R
θ
JA
Total Device Dissipa tion
Derate above 25°C
Thermal Resistan ce, Junction to Ambient 357
350
2.8
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
ã 1997 Fairchild Semiconductor Corporation
mW
mW/°C
C/W
°
(BR)
(BR)
(BR)
µ
µ
PNP Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(
)
sat
V
sat
BE(
)
SMALL SIGNAL CHARACTERISTICS
f
T
C
C
Collector-Emitte r Breakdown Voltage IC = 10 mA, IB = 0 30 V
Collector-Base Breakdown Voltag e
I
= 10 µA, IE = 0
C
40 V
Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V
Collector-Cutoff Current VCB = 30 V, IE = 0 0.1
Emitter-Cutoff Current VEB = 10 V, IC = 0 0.1
DC Current Gain IC = 1.0 mA, VCE = 5.0 V
I
= 10 mA, VCE = 5.0 V
C
I
= 100 mA, VCE = 5.0 V
C
4,000
10,000
20,000
Collector-Emitte r Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V
Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
Current Gain - Bandwidth Product IC = 30 mA, VCE = 5.0 V,
220 MHz
f = 100 MHz
Collector Capacitance VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF
BCV26
A
A
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Cu rrent
50
V = 5V
40
30
20
10
FE
h - TYPICAL PULSED CURRENT G AIN (K)
CE
125 °C
25 °C
- 40 °C
0
0.01 0.1 1
I - COLLECTOR CURREN T (A)
C
Collector-Emitter Satur ation
Voltage vs Collector Current
1.6
= 1000
β
1.2
- 40 ºC
0.8
0.4
0
0.001 0.01 0.1 1
CESAT
V - COLLECTOR EMITTER VOLTA GE (V)
I - COLLECTOR CURRENT (A)
C
25 °C
125 ºC
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