The STTH15R06D/FP, which is using ST Turbo 2
600V technology, is specially suited as boost
diodeincontinuousmodepowerfactorcorrections
and hard switching conditions.
The device is also intended for use as a free
wheeling diode in powersupplies and otherpower
switching applications.
A
K
TO-220FPAC
STTH15R06FP
K
A
K
TO-220AC
STTH15R06D
ABSOLUTE RATINGS (limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage600V
RMS forward current30A
Average forward current15A
Surge non repetitive forward currenttp = 10 msSinusoidal120A
Storage temperature range- 65 + 175°C
TjMaximum operatingjunction temperature+ 175°C
January 2002 - Ed: 1B
1/6
Page 2
STTH15R06D/FP
THERMAL RESISTANCES
SymbolParameterValueUnit
R
th (j-c)
Junction to caseTO-220AC1.5°C/W
TO-220FPAC4.0
STATIC ELECTRICAL CHARACTERISTICS
SymbolParameterTests conditionsMin.Typ.Max.Unit
I
R
V
Reverse leakage
current
Forward voltage dropIF= 15 ATj= 25°C2.9V
F
VR= 600VTj = 25°C60µA
Tj = 125°C70800
Tj = 125°C1.41.8
To evaluate the maximum conduction losses use the following equation :
P=1.16xI
F(AV)
+ 0.043 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
SymbolTests conditionsMin.Typ.Max.Unit
trrI
= 0.5 A Irr = 0.25 A IR= 1ATj = 25°C30ns
F
I
=1A dIF/dt=-50A/µs
F
50
VR= 30V
I
RM
S factor0.15
VR= 400 V IF= 15A
dIF/dt = - 200A/µs
Tj = 125°C7.59.0A
Qrr220nC
tfrI
V
FP
=15AdIF/dt = 120 A/µs
F
VFR=1.1xVFmax
Tj = 25°C200ns
6V
2/6
Page 3
STTH15R06D/FP
Fig.1: Conductionlosses versus average current.
P(W)
40
35
30
25
20
15
10
5
0
02468101214161820
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3-1: Relative variation of thermal impedance
junctiontocaseversuspulseduration
(TO-220AC).
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-031.E-021.E-011.E+00
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
120
110
100
90
80
70
60
50
40
30
20
10
0
0123456
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
Tj=125°C
Tj=125°C
VFM(V)
Tj=25°C
(Maximum values)
Fig. 3-2: Relative variation of thermal impedance
junctiontocaseversuspulseduration
(TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-031.E-021.E-011.E+001.E+01
tp(s)
δ
=tp/T
T
tp
Fig. 4:Peak reverse recovery current versus
/dt (90% confidence).
dI
F
IRM(A)
30
VR=400V
Tj=125°C
25
20
15
10
5
IF=0.5 x IF(av)IF=0.5 x IF(av)
IF=0.25 x IF(av)IF=0.25 x IF(av)
dIF/dt(A/µs)
0
02004006008001000
IF=2 x IF(av)IF=2 x IF(av)
IF=IF(av)IF=IF(av)
Fig. 5:Reverse recovery time versus dIF/dt
(90% confidence).
trr(ns)
100
90
80
70
60
50
40
30
20
10
0
02004006008001000
IF=0.5 x IF(av)IF=0.5 x IF(av)
IF=IF(av)IF=IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)IF=2 x IF(av)
VR=400V
Tj=125°C
3/6
Page 4
STTH15R06D/FP
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
800
VR=400V
Tj=125°C
700
600
500
400
300
200
100
0
02004006008001000
dIF/dt(A/µs)
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
Fig.8:Relativevariationofdynamic
parameters versus junction temperature.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
255075100125
IRM
Qrr
S factor
Tj(°C)
IF=IF(av)
VR=400V
Tj=125°C
Reference: Tj=125°C
Fig. 7:Softness factor versus dIF/dt (typical
values).
S factor
0.35
IF=IF(av)
VR=400V
Tj=125°C
0.30
0.25
0.20
0.15
dIF/dt(A/µs)
0.10
02004006008001000
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence).
dI
F
VFP(V)
12
IF=IF(av)
11
Tj=125°C
10
9
8
7
6
5
4
3
2
1
0
0100200300400500
dIF/dt(A/µs)
Fig. 10:Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0100200300400500
dIF/dt(A/µs)
4/6
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
Fig. 11:Junction capacitance versus reverse
voltage applied (typical values).
Maximum torque value (TO-220AC / TO-220FPAC): 0.7 Nm
■
Epoxy meets UL 94,V0
■
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