Datasheet HMC322 Datasheet (hittite)

查询HMC322供应商

7

MICROWAVE CORPORATION

Typical Applications

The HMC322 is ideal for:

• T elecom Infrastructure

• Microwave Radio & VSAT

• Military & Space

• T est Instrumentation

Functional Diagram

v00.0303

HMC322

GaAs MMIC SP8T NON-REFLECTIVE

SWITCH, DC - 10.0 GHz

Features

Broadband Performance: DC - 10.0 GHz
High Isolation: >38 dB@ 4 GHz
Low Insertion Loss: 2.0 dB@ 4 GHz
Integrated 3:8 TTL Decoder
Small Size: 1.45 mm x 1.6 mm x 0.10 mm

General Description

The HMC322 is a broadband non-refl ective
GaAs MESFET SP8T switch chip. Covering DC
to 10.0 GHz, this switch offers high isolation and
low insertion loss and extends the frequency
coverage of Hittite’s SP8T switch product line.
This switch also includes an on board binary
decoder circuit which reduces the required logic
control lines to three. The switch operates using
a negative control voltage of 0/-5V, and requires
a fi xed bias of -5V. All data is tested with the chip
in a 50 Ohm test fi xture connected via 0.025 mm
(1 mil) diameter wire bonds of 0.5 mm (20 mils)
length.

Electrical Specifi cations, T

Insertion Loss

SWITCHES - CHIP

Isolation (RFC to RF1 - 8)

Return Loss “On State” DC - 10.0 GHz 14 dB
Return Loss “Off State” DC - 10.0 GHz 11 dB
Input Power for 1 dB Compression 0.5 - 10.0 GHz 19 23 dBm
Input Third Order Intercept

(Two-Tone Input Power = +7 dBm Each Tone)
Switching Characteristics

tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

7 - 14

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

= +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System

A

Parameter Frequency Min. Typ. Max. Units

DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz

DC - 10.0 GHz

DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz

DC - 10.0 GHz

0.5 - 10.0 GHz 34 38 dBm

DC - 10.0 GHz

40
32
27
20
18

1.9

2.0

2.1

2.2

2.4
46

38
32
26
24

50

150

2.3

2.4

2.5

2.6

2.8

dB
dB
dB
dB
dB

dB
dB
dB
dB
dB

ns
ns

Order Online at www.hittite.com

v00.0303

HMC322

MICROWAVE CORPORATION

GaAs MMIC SP8T NON-REFLECTIVE

SWITCH, DC - 10.0 GHz

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Insertion Loss vs. Temperature Isolation Between RFC and Output Ports

0

-1

-2

-3

INSERTION LOSS (dB)

-4

-5
012345678910

+25 C
+85 C

-55 C

FREQUENCY (GHz)

0

-10

-20

-30

-40

ISOLATION (dB)

-50

-60

-70
012345678910

RF1
RF2
RF3
RF4
RF5
RF6
RF7
RF8

FREQUENCY (GHz)

Return Loss

0

RFC

-5

-10

-15

RETURN LOSS (dB)

-20

-25
012345678910

FREQUENCY (GHz)

RF1-8 ON
RF1-8 OFF

0.1 and 1 dB Input Compression Point

28

26

24

22

Isolation Between Output Ports

0

-10

-20

-30

-40

ISOLATION (dB)

-50

-60

-70
012345678910

FREQUENCY (GHz)

Input Third Order Intercept Point

50

45

40

35

7

SWITCHES - CHIP

20

INPUT COMPRESSION POINT (dBm)

18

12345678910

FREQUENCY (GHz)

1.0 Compression Point

0.1dB Compression Point

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

30

INPUT THIRD ORDER INTERCEPT (dBm)

25

12345678910

FREQUENCY (GHz)

+25 C
+85 C

-55 C

7 - 15

MICROWAVE CORPORATION

v00.0303

HMC322

GaAs MMIC SP8T NON-REFLECTIVE

SWITCH, DC - 10.0 GHz

7

Absolute Maximum Ratings

Bias Voltage Range (Vee) -7.0 Vdc

Control Voltage Range
(A, B, & C)

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

RF Input Power, 0.5 - 10 GHz +26 dBm

Vee -0.5V to +1.0 Vdc

Bias Voltage & Current

Vee Range = -5.0 Vdc ± 10%

Vee

(Vdc)

-5.0 5.0 9.0

Iee (Typ.)

(mA)

Iee (Max.)

(mA)

Control V oltages

State Bias Condition

Low -3V to 0 Vdc @ 25 uA Typical

High -5 to -4.2 Vdc @ 5 uA Typical

T ruth T able

Control Input Signal Path State

A B C RFCOM to:

High High High RF1

Low High High RF2

High Low High RF3

Low Low High RF4

High High Low RF5

Low High Low RF6

High Low Low RF7

Low Low Low RF8

SWITCHES - CHIP

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

7 - 16

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

Outline Drawing

v00.0303

HMC322

GaAs MMIC SP8T NON-REFLECTIVE

SWITCH, DC - 10.0 GHz

NOTES:

1. DIMENSIONS IN INCHES [MILLIMETERS].

2. DIE THICKNESS IS 0.004”.

3. TYPICAL BOND PAD IS 0.004” SQUARE.

4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER.

5. BOND PAD METALLIZATION: GOLD.

6. BACKSIDE METALLIZATION: GOLD.

7. BACKSIDE METAL IS GROUND.

8. NO CONNECTION REQUIRED FOR UNLABELED GROUND BOND PADS.

7

SWITCHES - CHIP

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

7 - 17

v00.0303

MICROWAVE CORPORATION

HMC322

GaAs MMIC SP8T NON-REFLECTIVE

SWITCH, DC - 10.0 GHz

Pad Descriptions

Pad Number Function Description Interface Schematic

7

1 - 7,

12 - 14

8 A See truth table and control voltage table.

9 B See truth table and control voltage table.

10 C See truth table and control voltage table.

11 Vee Supply Voltage = -5Vdc ± 10%

Die Bottom GND Die bottom must be connected to RF / DC ground.

RF1, RFC,
RF8 - RF2

These pads are DC coupled and matched to 50 Ohms. Blocking

capacitors are required if RF line potential is not equal to 0V.

TTL Interface Circuit (Required for Each Control Input A, B and C)

SWITCHES - CHIP

Note:
Control inputs A, B, and C can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and
to the Vee pad of the RF Switch.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

7 - 18

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

Assembly Diagram

v00.0303

HMC322

GaAs MMIC SP8T NON-REFLECTIVE

SWITCH, DC - 10.0 GHz

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize

inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.

Mounting

The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and
fl at.

Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding f orce of 40 to 50 g rams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).

7

SWITCHES - CHIP

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

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