Page 1
MICROWAVE CORPORATION
v00.0501
HMC365
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
3
Typical Applications
Prescaler for DC to Ku Band PLL Applications:
• Satellite Communication Systems
• Fiber Optic
• Pt-Pt and Pt-MPt Radios
• VSAT
Functional Diagram
Features
Ultra Low SSB Phase Noise: -151 dBc/Hz
Wide Bandwidth
Output Power: 5 dBm
Single DC Supply: +5V
Small Size: 0.686 x 1.295 mm
General Description
The HMC365 is a low noise Divide-by-4 Static
Divider with InGaP GaAs HBT technology that
has a small size of 0.686 mm x 1.295 mm. This
device operates from DC (with a square wave
input) to 13 GHz input frequency with a single
+5.0V DC supply. The low additive SSB phase
noise of -151 dBc/Hz at 100 kHz offset helps the
user maintain good system noise performance.
Guaranteed Performance, Vcc= 5V, 25 Deg °C
FREQ. DIVIDERS & DETECTORS - CHIP
1. Divider will operate down to DC for square-wave input signal.
2. When operated in high power mode (pin 10 connected to ground).
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3 - 58
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
Page 2
v00.0501
HMC365
MICROWAVE CORPORATION
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Input Sensitivity Window, T= 25 °C Input Sensitivity Window vs. Temperature
20
10
0
Recommended
Operating Window
-10
INPUT POWER (dBm)
-20
-30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT FREQUENCY (GHz)
Output Power vs. Temperature
10
9
8
7
6
5
4
3
2
1
0
-1
OUTPUT POWER (dBm)
-2
-3
-4
-5
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT FREQUENCY (GHz)
+25 C
+85 C
-55 C
20
10
0
-10
INPUT POWER (dBm)
-20
-30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Min Pin +25 C
Max Pin +25 C
Min Pin +85 C
Max Pin +85 C
Min Pin -55 C
Max Pin -55 C
INPUT FREQUENCY (GHz)
SSB Phase Noise
Performance, Pin= 0 dBm, T= 25 °C
0
-20
-40
-60
-80
-100
-120
SSB PHASE NOISE (dBc/Hz)
-140
-160
2
10
3
10
4
10
OFFSET FREQUENCY (Hz)
5
10
3
6
10
7
10
Output Harmonic
Content, Pin= 0 dBm, T= 25 °C
0
-10
-20
-30
OUTPUT LEVEL (dBm)
-40
-50
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
Pfeedthru
2nd Harmonic
3rd Harmonic
Reverse Leakage, Pin= 0 dBm, T= 25 °C
0
-10
-20
-30
-40
POWER LEVEL (dBm)
-50
-60
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
INPUT FREQUENCY (GHz)
Both Output Ports Terminated
One Output Port Terminated
FREQ. DIVIDERS & DETECTORS - CHIP
3 - 59
Page 3
MICROWAVE CORPORATION
v00.0501
Output V oltage Wavef orm,
Pin= 0 dBm, Pout= 882 MHz, T= 25 °C
HMC365
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
Absolute Maximum Ratings
3
700
600
500
400
300
200
100
0
-100
-200
AMPLITUDE (mV)
-300
-400
-500
-600
-700
22.7 22.9 23.1 23.3 23.5 23.7 23.9 24.1 24.3 24.5 24.7
TIME (nS)
Pad Locations & Outline Drawing
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FREQ. DIVIDERS & DETECTORS - CHIP
3 - 60
ALL DIMENSIONS IN INCHES (MILLIMETERS)
ALL TOLERANCES ARE ±0.001 (0.025)
DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
BOND PADS ARE 0.004 (0.100) SQUARE
BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
BACKSIDE METALLIZATION: GOLD
BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
Page 4
MICROWAVE CORPORATION
Pad Description
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v00.0501
HMC365
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
FREQ. DIVIDERS & DETECTORS - CHIP
3 - 61
Page 5
MICROWAVE CORPORATION
Pad Description (continued)
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v00.0501
HMC365
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
3
01LESRWP
31NWDRWP
41ELBASID
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.ecivedsihtnwodrewoplliwnipsihtotstlov5gniylppA
.noitarepolamronrofdednuorgsinipelbasidehT
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T ruth T able
FREQ. DIVIDERS & DETECTORS - CHIP
3 - 62
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ELBASID41ffOtuptuOnOtuptuOX
RWP
NWD
RWP
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01X
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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Visit us at www.hittite.com, or Email at [email protected]
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MICROWAVE CORPORATION
Assembly Diagrams
AC coupling capacitors.
v00.0501
To +5V VCC Supply
(Bypassed via 10 uF Capacitor).
HMC365
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
AC coupling capacitors.
3
Optional AC coupled
differential input. Should
be AC grounded for single
ended operation.
This port should be grounded
for normal operation. Applying
+5V to this port will disable the
input buffer amplifier.
This port should be grounded
for normal operation. Applying
+5V to this port will power
down the device.
Optional AC coupled
differential output. For best
single ended reverse leakage
performance, this port should
be terminated into 50 ohm.
For high power output, this
port should be bonded to
ground. For low power output,
this port should be floating.
FREQ. DIVIDERS & DETECTORS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
3 - 63
Page 7
3
MICROWAVE CORPORATION
v00.0501
HMC365
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweez ers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temper ature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds
of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Ball bonds should be made with a force of 40-50
grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 deg. C.
A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as
possible, less than 12 mils (0.31 mm).
FREQ. DIVIDERS & DETECTORS - CHIP
3 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
Page 8
MICROWAVE CORPORATION
Notes:
v00.0501
HMC365
GaAs HBT MMIC
DIVIDE-BY-4, DC - 13.0 GHz
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
FREQ. DIVIDERS & DETECTORS - CHIP
3 - 65
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