Page 1
MICROWAVE CORPORATION
GaAs MMIC MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
FEBRUARY 2001
Features
HIGH GAIN: 21 dB
1
Psat OUTPUT POWER : +21 dBm
WIDEBAND PERFORMANCE: 17 - 40 GHz
SMALL CHIP SIZE: 0.88 mm x 1.72 mm
AMPLIFIERS
DIE
Guaranteed Perf ormance,
V02.05.00
General Description
The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifier (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be
integrated into Multi-Chip Modules (MCMs) due to its
small (1.62 mm2) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain and +21 dBm
output power from a bias supply of +3.5V @ 3000 mA.
This medium PA can be used in millimeterwave pointto-point radios, VSAT, and other SATCOM applications. The HMC283 may be used as a frequency
doubler. A B.I.T. (Buil-In-Test) pad (Vdet) allows
monitoring microwave output power. All data is with
the chip in a 50 ohm test fixture connected via r0.076
mm x 0.0127 mm (3 mil x 0.5 mil) ribbon bonds of
minimal leghth 0.31 mm(<12 mils).
Vdd = +3.5V*, Idd = 300mA, -55 to +85 deg C
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noitalosIesreveR0405Bd
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)tasP(rewoPtuptuOdetarutaS7112mBd
)3PI(tpecretnIredrOdrihTtuptuO1262mBd
erugiFesioN 0141Bd
)4,3,2,1ddV(egatloVylppuS52.35.357.3cdV
)4,3,2,1ggV(egatloVsaiBetaG 51.0-cdV
).pyTV51.0-=ggV,V5.3+=ddV()ddI(tnerruCylppuS 003004Am
.lacipytAm003=ddIeveihcaotV4.0+ot0.2-neewteb4,3,2,1gV=ggVtsujda,V5.3+otdetcennoc4,3,2,1dV=ddV*
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 66
Page 2
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
V02.05.00
Broadband Gain & Return Loss
30
25
20
15
10
5
0
-5
RESPONSE (dB)
-10
-15
-20
-25
0 10203040
S21
S11
FREQUENCY (GHz)
S22
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
-70
10 15 20 25 30 35 40
S12 -55 C
FREQUENCY (GHz)
S12 +85 C
S12 +25 C
Noise Figure vs. Temperature
14
12
10
8
6
4
NOISE FIGURE (dB)
2
0
10 15 20 25 30 35 40
+25 C
FREQUENCY (GHz)
+85 C
-55 C
FEBRUARY 2001
Gain vs. Temperature
30
28
26
24
22
20
GAIN (dB)
18
16
14
12
10
10 15 20 25 30 35 40
S21 -55 C
S21 +25 C
S21 +85 C
FREQUENCY (GHz)
Input Match vs. Temperature
0
-2
-4
-6
-8
-10
-12
-14
-16
INPUT RETURN LOSS (dB)
-18
-20
10 15 20 25 30 35 40
S11 -55C
S11 +85C
S11 +25 C
FREQUENCY (GHz)
Output Match vs. Temperature
0
-2
S22 +25 C
-4
-6
-8
-10
-12
-14
-16
OUTPUT RETURN LOSS (dB)
-18
-20
10 15 20 25 30 35 40
S22 +85 C
FREQUENCY (GHz)
S22-55 C
1
AMPLIFIERS
DIE
All data is with the chip in a 50 ohm test fixture connected via 0.076 mm x 0.0127 mm (3 mil x 0.5 mil) ribbon
bonds of minimal length 0.31 mm (<12 mils).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 67
Page 3
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
FEBRUARY 2001
P1dB vs. Temperature
1
P1dB (dBm)
AMPLIFIERS
Psat vs. Temperature
DIE
Psat (dBm)
23
22
21
20
19
18
17
16
15
14
13
16 18 20 22 24 26 28 30 32 34 36 38 40
25
24
23
22
21
20
19
18
17
16
15
16 18 20 22 24 26 28 30 32 34 36 38 40
-55 C
+85 C+25 C
FREQUENCY (GHz)
-55 C
+25 C
+85 C
FREQUENCY (GHz)
V02.05.00
Power Compression @ 20 GHz
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-2 0 2 4 6 810
Pout/dBm
INPUT POWER (dBm)
Gain/dB
PAE/%
Power Compression @ 28 GHz
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-20246810
Gain/dB
Pout/dBm
PAE/%
INPUT POWER (dBm)
Output IP3 vs. Temperature
Frequency (GHz)
Temperature 20 28 38
-55oC 25.6 25.4 28.6
+25oC 27.5 25.9 27.1
+85oC 27 24.4 25.7
All levels in dBm
Power Compression @ 39 GHz
24
22
20
18
16
14
12
10
8
6
OUTPUT POWER (dBm)
4
2
0
-10-8-6-4-2 0 2 4 6 810
Gain/dB
Pout/dBm
PAE/%
INPUT POWER (dBm)
All data is with the chip in a 50 ohm test fixture connected via 0.076 mm x 0.0127 mm (3 mil x 0.5 mil) ribbon
bonds of minimal length 0.31 mm (<12 mils).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 68
Page 4
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
V02.05.00
Schematic
Vd1
RF IN
Vg1
Outline
Vd1
Vg2
Vg2
Vd 2,3,4
Vg3,4 Vdet
RF OUT
FEBRUARY 2001
Absolute Maximum Ratings
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)ddI(tnerruCylppuSAm004
)ggV(egatloVsaiBetaGV4.0+ot2-
)Am(tnerruCetaGCDAm4
)V3+=ddV()niFR(rewoPtupnImBd01+
)cT(erutarepmeTlennahCC°571
)C°58=aT(ssidPsuounitnoC
)C°58evobaC°/Wm40.31etared(
erutarepmeTegarotSC°051+ot56-
erutarepmeTgnitarepOC°58+ot55-
W471.1
Vd3, 2
Vd4
1
AMPLIFIERS
DIE
RF out
RF in
ALL DIMENSION IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BACKSIDE METALLIZATION : GOLD
BOND PAD METALLIZATION : GOLD
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 69
Page 5
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
FEBRUARY 2001
1
AMPLIFIERS
DIE
V02.05.00
Mounting & Bonding Techniques for Millimeterwave GaAs
MMICs
The die should be attached directly to the ground plane eutectically or
with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the
chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates
must be used, the die should be raised 0.150mm (6 mils) so that the
surface of the die is coplanar with the surface of the substrate. One way
to accomplish this is to attach the 0.102mm (4 mil) thick die to a
0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is
then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible
in order to minimize bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013
mm (3mil x 0.5 mil) is recommended to minimize inductance on the RF ports. 0.025 mm (1 mil) diameter ball or wedge
bonds are acceptable for DC bias connections.
RF bypass capacitor should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted eutectically or
by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip are recommended. The photo in figure
3 shows a typical assembly for the HMC283 MMIC chip.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
RF IN
Figure 3: Typical HMC283 Assembly
Vdd = Vd1, 2, 3, 4
Vg1
Vg2, 3, 4
RF OUT
Vgg
1 - 70
Page 6
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
V02.05.00
HMC283 Alternate Applications:
HMC283 Frequency Multiplier Performance
HMC283 can also perform as a frequency multiplier. This is
accomplished by biasing Vg1 into its pinchoff region typically -1V to -2V. By adjusting the Vg1 bias, the device
will operate as a doubler or tripler. Vg2 may also be adjusted
to minimize the levels of unwanted harmonics. The plot
shows the performance of HMC283 operated as a doubler
with Vg1= -1V and the remaining gate voltages(Vg2,3,4) set
to -0.15V. In this condition the amplifier draws 310mA at
3.5V drain bias (Vdd) and provides +5dB to -5dB conversion
loss dependent upon the output frequency
HMC283 Voltage Detector, Built-In-Test (B.I.T.)
FEBRUARY 2001
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
CONVERSION LOSS (dB)
-7
-8
-9
-10
10 15 20 25 30 35 40
10 dBm
OUTPUT FREQUENCY (GHz)
15 dBm
18 dBm
1
AMPLIFIERS
DIE
By connecting the Vdet port to a 10K resistor and monitoring the voltage a B.I.T. circuit can be created to
monitor changes in the device output power. This circuit is extremely well compensated for temperature
variations as shown in the first plot. The detected voltage does change with frequency and the second plot
shows its variation.
1.6
1.4
1.2
1
0.8
0.6
0.4
DETECTED VOLTAGE
INTO 10K RESISTOR (Volts)
0.2
0
10 12 14 16 18 20 22
+85 C
-55 C
+25 C
OUTPUT POWER ( dBm)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
2
1.8
1.6
1.4
1.2
1
0.8
0.6
DETECTED VOLTAGE
0.4
INTO 10K RESISTOR (Volts)
0.2
0
10 12 14 16 18 20 22
22 GHz
18 GHz
28 GHz
OUTPUT POWER ( dBm)
38 GHz
1 - 71
Page 7
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
FEBRUARY 2001
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
1
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
AMPLIFIERS
Mounting
DIE
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically
conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
V01.05.00
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias) or ribbon bond (RF ports) with
0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 72
Page 8
MICROWAVE CORPORATION
HMC283 MEDIUM POWER AMPLIFIER 17 - 40 GHz
HMC283
V01.05.00
NOTES:
FEBRUARY 2001
1
AMPLIFIERS
DIE
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 73
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