Datasheet HMC281 Datasheet (Hittite)

MICROWAVE CORPORATION

GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz

HMC281

FEBRUARY 2001

Features

EXCELLENT NOISE FIGURE: 2.5 dB

1

STABLE GAIN vs. TEMPERATURE: 22 dB ± 2 dB

WIDEBAND PERFORMANCE: 18 - 32 GHz

SMALL SIZE: 0.97 mm x 1.67 mm

AMPLIFIERS

DIE

V02.0500

General Description

The HMC281 chip is a three stage GaAs MMIC
Low Noise Amplifier (LNA) which covers the
frequency range of 18 to 32 GHz. The chip can
easily be integrated into Multi-Chip Modules

2

(MCMs) due to its small (1.62 mm
chip utilizes a GaAs PHEMT process offering 22
dB gain from a bias supply of +3.5V @ 60mA with
a noise figure of 2.5 dB. This LNA can be used in
millimeterwave point-to-point radios, LMDS,
VSAT, and other SATCOM applications. All data
is with the chip in a 50 ohm test fixture connected
via ribbon bonds of minimal length. The HMC281
may be used in conjunction with HMC143,
HMC203, HMC258, HMC264, or HMC265 mix­ers to realize a microwave or millimeterwave
system receiver.

) size. The

Guaranteed Perf ormance, Vdd = +3.5V*, Idd = 60mA, -55 to +85 deg C

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erugiFesioN 5.24 2.37.4Bd

ssoLnruteRtupnI 316Bd

ssoLnruteRtuptuO 017Bd

noitalosIesreveR04542425Bd

)Bd1P(noisserpmoCBd1rofrewoPtuptuO59601mBd

)tasP(rewoPtuptuOdetarutaS8215.821mBd

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)3,2,1ddV(egatloVylppuS52.35.357.352.35.357.3cdV

)3,2gV&1gV(egatloVsaiBetaG 52.0-52.0-cdV

).pyTV51.0-=ggV,V5.3+=ddV()ddI(tnerruCylppuS 0600106001Am

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 54

MICROWAVE CORPORATION

HMC281 LOW NOISE AMPLIFIER 18 - 32 GHz

HMC281

V02.0500

Gain vs. Temperature

30
28

+85 C

26
24
22
20

GAIN (dB)

18
16
14
12
10

10 15 20 25 30 35 40

+25 C

-55 C

FREQUENCY (GHz)

Input Match

0

-2

-4

-6

-8

-10

-12

-14

-16

INPUT RETURN LOSS (dB)

-18

-20
10 15 20 25 30 35 40

FREQUENCY (GHz)

FEBRUARY 2001

Noise Figure vs. Temperature

8
7
6
5
4
3

NOISE FIGURE (dB)

2
1
0

15 20 25 30 35

+85 C

FREQUENCY (GHz)

+25 C

-55 C

Output Match

0

-2

-4

-6

-8

-10

-12

-14

-16

OUTPUT RETURN LOSS (dB)

-18

-20
10 15 20 25 30 35 40

FREQUENCY (GHz)

1

AMPLIFIERS

DIE

All data is with the chip in a 50 ohm test fixture connected via ribbon bonds of minimal length.

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 55

MICROWAVE CORPORATION

HMC281 LOW NOISE AMPLIFIER 18 - 32 GHz

HMC281

FEBRUARY 2001

Isolation

1

ISOLATION (dB)

AMPLIFIERS

DIE

0

-10

-20

-30

-40

-50

-60

-70
10 15 20 25 30 35 40

FREQUENCY (GHz)

P1dB Output @ Vdd = +3V

16
14
12
10

8
6

P1dB (dBm)

4
2
0

10 15 20 25 30 35 40

-55 C

IP3 Output @ Vdd = +3V

35

30

25

IP3 (dBm)

20

15

10

10 15 20 25 30 35 40

+85 C

FREQUENCY (GHz)

+25 C

-55 C

+85 C

FREQUENCY (GHz)

V02.0500

+25 C

All data is with the chip in a 50 ohm test fixture connected via ribbon bonds of minimal length.

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 56

MICROWAVE CORPORATION

HMC281 LOW NOISE AMPLIFIER 18 - 32 GHz

HMC281

V02.0500

Schematic

Vg1

Outline

Vdd = Vd1, 2, 3

Vg2, 3

Backside is Ground

FEBRUARY 2001

Absolute Maximum Ratings

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RF OUTRF IN

)Am(tnerruCetaGCDAm4

)V3+=ddV()niFR(rewoPtupnImBd5-

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W/C°47

Vd1, 2, 3

1

AMPLIFIERS

DIE

RF out

RF in

HMC281

Vg2, 3

Vg1

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

ALL DIMENSION IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BACKSIDE METALLIZATION : GOLD
BOND PAD METALLIZATION : GOLD

1 - 57

MICROWAVE CORPORATION

HMC281 LOW NOISE AMPLIFIER 18 - 32 GHz

HMC281

FEBRUARY 2001

1

AMPLIFIERS

DIE

V02.0500

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling,
Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing
RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to
accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly­tab) which is then attached to the ground plane (Figure 2).

Microstrip substrates should brought as close to the die as possible
in order to minimize bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013
mm (3mil x 0.5 mil) is recommended to minimize inductance on the RF ports. 0.025 mm (1 mil) diameter ball or wedge
bonds are acceptable for DC bias connections.

RF bypass capacitors should be used on the Vdd & Vgg inputs. 100 pF single layer capacitors (mounted eutectically
or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip are recommended.

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 58

MICROWAVE CORPORATION

HMC281 LOW NOISE AMPLIFIER 18 - 32 GHz

HMC281

V02.0500

FEBRUARY 2001

Handling Precautions

Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent twee­zers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, twee­zers, or fingers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically
conductive epoxy. The mounting surface should be clean and flat.

Eutectic Die Attach:

A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool tem­perature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.

1

AMPLIFIERS

DIE

Epoxy Die Attach:

Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.

Wire Bonding

Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias) or ribbon bond (RF ports) with

0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 59