The HMC286 is a low cost Low Noise Amplifier
(LNA) for 2.3 to 2.5 GHz spread spectrum
applications including BLUETOOTH, HomeRF,
and 802.11 WLAN radios. The LNA provides 17
dB of gain and a 1.8 dB noise figure from a single
positive +3V power supply that consumes only
8mA. The typical output 1 dB compression point
is +5 dBm and OIP3 is +13 dBm at 2.4 GHz. The
compact LNA design utilizes on-chip matching
for repeatable gain and noise figure performance.
In addition, eliminating the external matching
circuitry also reduces the overall size of the LNA
function. The HMC286 was designed to meet
the size constraints of PCMCIA platforms and
uses the SOT26 package that occupies 0.118”
x 0.118”, which makes it a small fully integrated
solution that can be easily implemented with
other 2.4 GHz ASICs.
Guaranteed Performance, Vdd = +3V, -40 to +85 deg C
retemaraP
egnaRycneuqerF5.2-3.2zHG
C°52@niaG517191Bd
erutarepmeTrevonoitairaVniaG520.0530.0/BdC°
ssentalFniaG5.0±Bd
erugiFesioN8.15.2Bd
ssoLnruteRtupnI601Bd
ssoLnruteRtuptuO0151Bd
)Bd1P(noisserpmoCBd1tuptuO05mBd
)3PIO(tpecretnIredrOdrihTtuptuO0131mBd
)ddV(egatloVylppuSdednemmoceR57.20.352.3cdV
)ddI(tnerruCylppuS821Am
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373Web Site: www.hittite.com
1 - 82
.niM.pyT.xaMstinU
Page 2
MICROWAVE CORPORATION
LOW NOISE AMPLIFIER 2.3 - 2.5 GHz
HMC286
V00.0900
Broadband Gain & Return Loss
20
15
10
5
0
-5
-10
-15
RESPONSE (dB)
-20
-25
-30
-35
1.61.822.22.42.62.83
FREQUENCY (GHz)
Gain vs. Temperature
20
19
18
Gain (dB)
17
16
15
2.22.32.42.52.6
FREQUENCY (GHz)
S11
S21
S22
-40 C
+25 C
+85 C
Broadband Noise Figure
4
3.5
3
2.5
2
1.5
NOISE FIGURE (dB)
1
0.5
0
1.61.822.22.42.62.83
FREQU E NCY (GH z )
Noise Figure vs Temperature
4
3.5
3
2.5
2
1.5
NOISE FIGURE (dB)
1
0.5
0
2.22.32.42.52.6
FREQUENCY (GHz)
FEBRUARY 2001
1
AMPLIFIERS
SMT
+25 C
-40 C
+85 C
Input Return Loss vs. Temperature
0
-2
-4
-6
-8
-10
-12
-14
-16
INPUT R E TUR N LOSS (d B)
-18
-20
2.22.32.42.52.6
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Output Return Loss vs. Temperature
0
+25 C
-5
-10
-15
-20
OUTPUT RETURN LOSS (dB)
-25
2.22.32.42.52.6
FREQUENCY (GHz)
+85 C
-40 C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373Web Site: www.hittite.com
1 - 83
Page 3
MICROWAVE CORPORATION
LOW NOISE AMPLIFIER 2.3 - 2.5 GHz
HMC286
FEBRUARY 2001
Output P1dB vs. Temperature
1
AMPLIFIERS
SMT
Output IP3 vs. Temperature
THIRD ORDER INTERCEPT (dBm)
15
-40 C
+85 C
10
5
P1dB (dBm)
0
-5
2.22.32.42.52.6
FREQUENCY (GHz)
20
15
10
5
0
1.822.22.42.62.83
FREQUENCY (GHz)
+25 C
+25C
+85C
-40C
V00.0900
Power Compression @ 2.4 GHz
25
20
15
10
5
0
POUT(dBm), GAIN (dB)
-5
-10
-30-25-20-15-10-5
Gain
OutputPower
INPUT POWER (dBm)
Reverse Isolation vs. Temperature
-25
+25 C
-30
-35
-40
-45
REVERSE ISOLATION (dB)
-50
2.22.32.42.52.6
FREQUENCY (GHz)
+85 C
-40 C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373Web Site: www.hittite.com
1 - 84
Page 4
MICROWAVE CORPORATION
LOW NOISE AMPLIFIER 2.3 - 2.5 GHz
HMC286
V00.0900
Schematic
Vdd
(Pin 3)
RF IN
(Pin 1)
GND
(Pins 2, 5, 6)
Note: Internal DC Blocks on
RF I/O's are included on HMC286.
Outline
RF OUT
(Pin 4)
FEBRUARY 2001
Absolute Maximum Ratings
)ddV(egatloVylppuScdV0.7+
rewoPtupnImBd0
)cT(erutarepmeTlennahC571°C
58=aT(ssidPsuounitnoC° )C
58evobaC/Wm53.6etared(° )C
erutarepmeTegarotS051+ot56-°C
erutarepmeTgnitarepO58+ot55-°C
Wm275
1
AMPLIFIERS
SMT
1. MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED.
B) LEADFRAME MATERIAL: COPPER ALLOY
2 . PLATING : LEAD - TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373Web Site: www.hittite.com
UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005 (±0.13).
4. CHARACTERS TO BE HELVETICA MEDIUM, APPROX .020 HIGH
WHITE INK, LOCATED APPROXIMATELY AS SHOWN.
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE
1 - 85
Page 5
MICROWAVE CORPORATION
LOW NOISE AMPLIFIER 2.3 - 2.5 GHz
HMC286
FEBRUARY 2001
Evaluation PCB for HMC286
1
AMPLIFIERS
SMT
V00.0900
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads should be connected directly to the ground plane similar
to that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground
planes. The evaluation circuit board as shown is available from Hittite upon request.
List of Material
metInoitpircseD
2J,1JrotcennoCAMStnuoMCP
4J,3JniPCD
1UreifilpmA682MH
*BCP"5.1x"6.1BCPnoitaulavE
0534sregoR:lairetaMdraoBtiucriC*
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373Web Site: www.hittite.com
1 - 86
Page 6
MICROWAVE CORPORATION
LOW NOISE AMPLIFIER 2.3 - 2.5 GHz
HMC286
V00.0900
NOTES:
FEBRUARY 2001
1
AMPLIFIERS
SMT
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373Web Site: www.hittite.com
1 - 87
Loading...
+ hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.