Datasheet HMC342 Datasheet (Hittite)

MICROWAVE CORPORATION

v00.0301

HMC342

GaAs MMIC LOW NOISE

Typical Applications

1

Microwave Point-to-Point Radios

Millimeterwave Point-to-Point Radios

VSAT and other SATCOM Applications

Functional Diagram

AMPLIFIERS - CHIP

AMPLIFIER 13 - 25 GHz

Features

Noise Figure : 3.5 dB

Gain: 20 dB

Single Supply : +3V @ 36 mA

Small Size: 1.06 mm x 2.02 mm

General Description

The HMC342 chip is a GaAs MMIC Low Noise
Amplifi er (LNA) which covers the frequency range
of 13 to 25 GHz. The chip can easily be inte­grated into Multi-Chip Modules (MCMs) due to its
small (2.14 mm2) size. The chip utilizes a GaAs
PHEMT process offering 20 dB gain from a single
bias supply of + 3.0V @ 36 mA with a noise fi gure
of 3.5 dB. All data is with the chip in a 50 ohm
test fi xture connected via 0.025 mm (1 mil) diam­eter wire bonds of minimal length 0.31 mm (<12
mils).

1 - 14

Guaranteed Performance, Vdd = +3V, +25° C

retemaraP.niM.pyT.xaMstinU

egnaRycneuqerF 52-31zHG

niaG 510252Bd

erutarepmeTrevOnoitairaVniaG 30.40.C°/Bd

erugiFesioN 5.35.4Bd

ssoLnruteRtupnI 831Bd

ssoLnruteRtuptuO 941Bd

noitalosIesreveR 9354Bd

)Bd1P(noisserpmoCBd1rofrewoPtuptuO 15 mBd

)tasP(rewoPtuptuOdetarutaS 38 mBd

)3PI(tpecretnIredrOdrihTtuptuO 831mBd

)V3+=ddV()ddI(tnerruCylppuS 63Am

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

MICROWAVE CORPORATION

v00.0301

HMC342

GaAs MMIC LOW NOISE

AMPLIFIER 13 - 25 GHz

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Gain vs. Temperature @ Vdd = +3V Gain vs. Temperature @ Vdd = +5V

30

+25 C

-55 C

25

20

GAIN (dB)

15

10

12 14 16 18 20 22 24 26

FREQUENCY (GHz)

+85 C

Return Loss @ Vdd = +3V Return Loss @ Vdd = +5V

0

-5

-10

S11

S22

30

25

20

GAIN (dB)

15

10

12 14 16 18 20 22 24 26

FREQUENCY (GHz)

0

-5

-10

S11

S22

+25 C

-55 C
+85 C

1

AMPLIFIERS - CHIP

-15

-20

RETURN LOSS (dB)

-25

-30
12 14 16 18 20 22 24 26

FREQUENCY (GHz)

Noise Figure
vs. Temperature @ Vdd = +3V

6

5

4

3

2

NOISE FIGURE (dB)

1

0

12 14 16 18 20 22 24 26

FREQUENCY (GHz)

+25 C

-55 C
+85 C

-15

-20

RETURN LOSS (dB)

-25

-30
12 14 16 18 20 22 24 26

FREQUENCY (GHz)

Noise Figure
vs. Temperature @ Vdd = +5V

6

5

4

3

2

NOISE FIGURE (dB)

1

0

12 14 16 18 20 22 24 26

FREQUENCY (GHz)

+25 C

-55 C
+85 C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

1 - 15

MICROWAVE CORPORATION

v00.0301

HMC342

GaAs MMIC LOW NOISE

Gain & Noise Figure
vs. Supply Voltage @ 18 GHz

1

21.4

21.3

21.2

21.1

GAIN dB)

21

20.9

20.8

2.5 3 3.5 4 4.5 5 5.5
Vdd SUPPLY VOLTAGE (Vdc)

Output P1dB @ Vdd = +3V Output P1dB @ Vdd = +5V

14

AMPLIFIERS - CHIP

12

10

8

6

P1dB (dBm)

4

2

+25 C

-55 C
+85 C

4

3.8

NOISE FIGURE (dB)

3.6

3.4

3.2

3

2.8

AMPLIFIER 13 - 25 GHz

Isolation

0

-10

-20

-30

-40

ISOLATION (dB)

-50

-60

-70
12 14 16 18 20 22 24 26

FREQUENCY (GHz)

14

12

10

8

6

P1dB (dBm)

4

2

+25 C

-55 C
+85 C

Vdd = +3V
Vdd = +5V

1 - 16

0

12 14 16 18 20 22 24 26

FREQUENCY (GHz)

0

12 14 16 18 20 22 24 26

FREQUENCY (GHz)

Output IP3 @ Vdd = +3V Output IP3 @ Vdd = +5V

30

+25 C

25

20

15

IP3 (dBm)

10

5

12 14 16 18 20 22 24 26

-55 C
+85 C

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

30

+25 C

25

20

15

IP3 (dBm)

10

5

12 14 16 18 20 22 24 26

-55 C
+85 C

FREQUENCY (GHz)

MICROWAVE CORPORATION

v00.0301

HMC342

GaAs MMIC LOW NOISE

Pad Locations & Outline Drawing

ALL DIMENSIONS IN INCHES (MILLIMETERS)
ALL TOLERANCES ARE ±0.001 (0.025)
DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
BOND PADS ARE 0.004 (0.100) SQUARE
BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
BACKSIDE METALLIZATION: GOLD
BOND PAD METALLIZATION: GOLD

AMPLIFIER 13 - 25 GHz

Absolute Maximum Ratings

)ddV(egatloVylppuScdV5.5+

)V3+=ddV()niFR(rewoPtupnImBd0

)cT(erutarepmeTlennahCC°571

)C°58=T(ssidPsuounitnoC

)C°58evobaC°/Wm26.3etared(

erutarepmeTegarotSC°051+ot56-

erutarepmeTgnitarepOC°58+ot55-

Wm623

1

AMPLIFIERS - CHIP

Pad Description

rebmuNdaPnoitcnuFnoitpircseDcitamehcSecafretnI

1tupnIFR zHG52-31morfmho05otdehctamdnadelpuocCAsidapsihT

2tuptuOFR zHG52-31morfmho05otdehctamdnadelpuocCAsidapsihT

3ddV

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

.dnuorggnisuohehtotdetcennoc

ebdluohsroticapacehtfoedisdnuorgehT.elbissopsatrohssa

Visit us at www.hittite.com, or Email at [email protected]

roticapacssapybFRlanretxenA.reifilpmaegats-2ehtrofylppusrewoP

ebdluohsroticapacehtothtgneldnobehT.deriuqersiFp003-001fo

1 - 17

MICROWAVE CORPORATION

v00.0301

HMC342

GaAs MMIC LOW NOISE

Assembly Diagrams

1

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

AMPLIFIERS - CHIP

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han­dling, Mounting, Bonding Note).

AMPLIFIER 13 - 25 GHz

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).

Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die­to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.

1 - 18

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

MICROWAVE CORPORATION

v00.0301

HMC342

GaAs MMIC LOW NOISE

AMPLIFIER 13 - 25 GHz

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness:

Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity:

Follow ESD precautions to protect against > ± 250V ESD strikes.

Transients:

Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.

General Handling:

Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers.

Mounting

1

AMPLIFIERS - CHIP

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and fl at.

Eutectic Die Attach:

A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds
of scrubbing should be required for attachment.

Epoxy Die Attach:

Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter
of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as
possible <0.31 mm (12 mils).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Visit us at www.hittite.com, or Email at [email protected]

1 - 19