Datasheet HMC339 Datasheet (Hittite)

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Page 1

MICROWAVE CORPORATION

v00.0301

HMC339

GaAs MMIC SUB-HARMONICALLY

Typical Applications

33 and 42 GHz Microwave Radios Up and Down Converter for

Point to Point Radios Satellite Communication Systems

Functional Diagram

PUMPED MIXER 33 - 42 GHz

Features

Integrated LO Amplifier: +2 dBm Input Sub-Harmonically Pumped (x2) LO High 2LO/RF Isolation: > 37 dB Small Size: 0.81mm x 1.32mm

General Description

The HMC339 chip is a sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of

1.07mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two stage design with only +2 dBm nominal drive requirement. All data is measured with the chip in a 50 ohm test fixture connected via 0.025mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils).

MIXERS - CHIP

Guaranteed Performance, As a Function of Vdd, 25 Deg °C

)tupnI(3PI50138mBd

*Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.

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zHG1=FI

retemaraP

.niM.pyT.xaM.niM.pyT.xaM

FR,egnaRycneuqerF24-3383-33zHG OLegnaRycneuqerF12-5.6191-5.61zHG FI,egnaRycneuqerF3-CD3-CDzHG

ssoLnoisrevnoC01310121Bd

)BSS(erugiFesioN01310121Bd

noitalosIFRotOL272733273Bd

noitalosIFIotOL203045204Bd

)tupnI(noisserpmoCBd14-0 5-1-mBd

)ddV(egatloVylppuS0.40.3cdV )ddI(tnerruCylppuS8252Am

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at [email protected]

V4+=ddV&mBd2+=OL

zHG1=FI

V3+=ddV&mBd2+=OL

stinUretemaraP

stinU

Page 2

MICROWAVE CORPORATION

v00.0301

HMC339

GaAs MMIC SUB-HARMONICALLY

PUMPED MIXER 33 - 42 GHz

Conversion Gain vs.

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Temperature @ LO = +2 dBm, Vdd= +4V

-4

-8

-12

CONVERSION GAIN (dB)

-16

-20 30 31 32 33 34 35 36 37 38 39 40 41 42

FREQUENCY (GHz)

+ 25 C + 85 C

- 55 C

Conversion Gain vs. LO Drive @ Vdd = +4V

0 dBm

-4

-8

+ 2 dBm + 4 dBm

Conversion Gain vs. Temperature @ LO = +2 dBm, Vdd= +3V

-4

-8

-12

CONVERSION GAIN (dB)

-16

-20 30 31 32 33 34 35 36 37 38 39 40 41 42

FREQUENCY (GHz)

Conversion Gain vs. LO Drive @ Vdd = +3V

-4

-8

+ 25 C + 85 C

- 55 C

0 dBm + 2 dBm + 4 dBm

-12

CONVERSION GAIN (dB)

-16

-20 30 31 32 33 34 35 36 37 38 39 40 41 42

FREQUENCY (GHz)

-12

CONVERSION GAIN (dB)

-16

-20 30 31 32 33 34 35 36 37 38 39 40 41 42

FREQUENCY (GHz)

Isolation @ LO = +2 dBm, Vdd = +4V Isolation @ LO = +2 dBm, Vdd = +3V

-10

-20

-30

ISOLATION (dB)

-40

-50

-60 30 31 32 33 34 35 36 37 38 39 40 41 42

LO/IF

2LO/RF

FREQUENCY (GHz)

LO/RF

RF/IF

2LO/IF

-10

-20

-30

ISOLATION (dB)

-40

-50

-60

LO/IF

2LO/RF

30 31 32 33 34 35 36 37 38 39 40 41 42

FREQUENCY (GHz)

LO/RF

RF/IF

2LO/IF

MIXERS - CHIP

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at [email protected]

5 - 43

Page 3

MICROWAVE CORPORATION

v00.0301

HMC339

GaAs MMIC SUB-HARMONICALLY

PUMPED MIXER 33 - 42 GHz

Input IP3 vs. LO Drive @ Vdd = +4V* Input IP3 vs. LO Drive @ Vdd = +3V*

THIRD ORDER INTERCEPT (dBm)

33 34 35 36 37 38 39 40 41

FREQUENCY (GHz)

Input IP3 vs. Temperature @ LO = +2 dBm, Vdd = +4V*

0 dBm + 2 dBm + 4 dBm

+ 25 C + 85 C

- 55 C

THIRD ORDER INTERCEPT (dBm)

33 34 35 36 37 38 39 40 41

FREQUENCY (GHz)

Input IP3 vs. Temperature @ LO = +2 dBm, Vdd = +3V*

0 dBm + 2 dBm + 4 dBm

+ 25 C + 85 C

- 55 C

MIXERS - CHIP

THIRD ORDER INTERCEPT (dBm)

33 34 35 36 37 38 39 40 41

FREQUENCY (GHz)

Input IP2 vs. LO Drive @ Vdd = +4V* Input IP2 vs. LO Drive @ Vdd = +3V*

SECOND ORDER INTERCEPT (dBm)

33 34 35 36 37 38 39 40 41

FREQUENCY (GHz)

0 dBm + 2 dBm + 4 dBm

THIRD ORDER INTERCEPT (dBm)

33 34 35 36 37 38 39 40 41

FREQUENCY (GHz)

SECOND ORDER INTERCEPT (dBm)

33 34 35 36 37 38 39 40 41

FREQUENCY (GHz)

0 dBm + 2 dBm + 4 dBm

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* Two-tone input power = -10 dBm each tone, 1 MHz spacing.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at [email protected]

Page 4

MICROWAVE CORPORATION

v00.0301

HMC339

GaAs MMIC SUB-HARMONICALLY

Input IP2 vs. Temperature @ LO = +2 dBm, Vdd = +4V*

SECOND ORDER INTERCEPT (dBm)

33 34 35 36 37 38 39 40 41

FREQUENCY (GHz)

Input P1dB vs. Temperature @ LO = +2 dBm, Vdd = +4V

8 6 4 2 0

-2

P1dB (dBm)

-4

-6

-8

-10 34 35 36 37 38 39 40

+ 25 C + 85 C

- 55 C

FREQUENCY (GHz)

+ 25 C + 85 C

- 55 C

PUMPED MIXER 33 - 42 GHz

Input IP2 vs. Temperature @ LO = +2 dBm, Vdd = +3V*

SECOND ORDER INTERCEPT (dBm)

33 34 35 36 37 38 39 40 41

FREQUENCY (GHz)

Input P1dB vs. Temperature @ LO = +2 dBm, Vdd = +3V

8 6 4 2 0

-2

P1dB (dBm)

-4

-6

-8

-10 34 35 36 37 38 39 40

FREQUENCY (GHz)

+ 25 C + 85 C

- 55 C

+ 25 C + 85 C

- 55 C

MIXERS - CHIP

RF & LO Return Loss @ LO = +2 dBm, Vdd = +4V

-5

-10

RETURN LOSS (dB)

-15

-20 0 5 10 15 20 25 30 35 40

FREQUENCY (GHz)

* Two-tone input power = -10 dBm each tone, 1 MHz spacing.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at [email protected]

LO RF

IF Return Loss @ LO = +2 dBm, Vdd = +4V

-5

-10

RETURN LOSS (dB)

-15

-20 012345678910

FREQUENCY (GHz)

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Page 5

MICROWAVE CORPORATION

v00.0301

HMC339

GaAs MMIC SUB-HARMONICALLY

IF Bandwidth @ LO = +2 dBm

-4

-8

-12

CONVERSION GAIN (dB)

-16

-20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

FREQUENCY (GHz)

Absolute Maximum Ratings

Vdd= +3V Vdd= +4V

)V5+=ddV(tupnIFI/FRmBd31+

)V5+=ddV(evirDOLmBd31+

PUMPED MIXER 33 - 42 GHz

Upconverter Performance Conversion Gain, LO = +2 dBm, Vdd = +4V

Vdd= +4V

-4

-8

-12

CONVERSION GAIN (dB)

-16

-20 26 28 30 32 34 36 38 40 42

FREQUENCY (GHz)

Vdd= +3V

MIXERS - CHIP

MXN Spurious @ IF Port Outputs @ LO = +2 dBm, Vdd = +4V

FRm5±4±3±2±1±0 2-44 1-2435

08141-

1X2431

25574

mBd01-@zHG93=FR

mBd2+@zHG91=OL

ddVV5.5+

)C°58=aT(ssidPsuonitnoC

)C°58evobaC°/Wm46.2etared(

erutarepmeTegarotSCged051+ot56-

erutarepmeTgnitarepOCged58+ot55-

Wm832

MXN Spurious @ RF Port Outputs @ LO = +2 dBm, Vdd = +3V

OLn

FIm5±4±3±2±1±0 2-03 1-X63

031021X633 27345

mBd01-@zHG1=FI

retrevnocnwodsaderusaeM

.levelrewopFIwolebcBdniseulavllA

mBd2+@zHG91=OL

retrevnocpusaderusaeM

OLn

.levelrewopFRwolebcBdniseulavllA

5 - 46

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at [email protected]

Page 6

MICROWAVE CORPORATION

v00.0301

GaAs MMIC SUB-HARMONICALLY

Pad Locations & Outline Drawing

HMC339

PUMPED MIXER 33 - 42 GHz

ALL DIMENSIONS IN INCHES (MILLIMETERS) ALL TOLERANCES ARE ±0.001 (0.025) DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND BOND PADS ARE 0.004 (0.100) SQUARE BOND PAD SPACING, CTR-CTR: 0.006 (0.150) BACKSIDE METALLIZATION: GOLD BOND PAD METALLIZATION: GOLD

Pad Description

rebmuNdaPnoitcnuFnoitpircseDcitamehcSecafretnI

1ddVssapybFRlanretxenA.reifilpmAOLehtrofylppusrewoP

2troPFR morfmho05otdehctamdnadelpuocCAsidapsihT.troPFR

3troPFI dekcolbCDebdluohsdnadelpuocCDsidapsihT.troPFI

4troPOL morfmho05otdehctamdnadelpuocCAsidapsihT.troPOL

MIXERS - CHIP

siroticapacredrobMIMA.deriuqersiFp033-001foroticapac

saebdluohsroticapacehtothtgneldnobehT.dednemmocer

ebdluohsroticapacehtfoedisdnuorgehT.elbissopsatrohs

.dnuorggnisuohehtotdetcennoc

.zHG24-33

neebsaheulavesohwroticapacseiresagnisuyllanretxe

deilppaynA.egnarycneuqerfFIyrassecenehtssapotnesohc

dnanoitcnuf-noneidnitluserlliwnipsihtotegatlovCD

.eruliafeidelbissop

zHG12-61

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at [email protected]

5 - 47

Page 7

MICROWAVE CORPORATION

3 mil Ribbon Bond

v00.0301

HMC339

GaAs MMIC SUB-HARMONICALLY

PUMPED MIXER 33 - 42 GHz

Assembly Diagrams

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thic k molybden um heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).

MIXERS - CHIP

Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports.

An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.

3 mil Ribbon Bond

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at [email protected]

Page 8

MICROWAVE CORPORATION

v00.0301

HMC339

GaAs MMIC SUB-HARMONICALLY

PUMPED MIXER 33 - 42 GHz

GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness:

Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity:

Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).

Transients:

Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.

General Handling:

Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweez ers, or fingers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.

Eutectic Die Attach:

A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temper ature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.

Epoxy Die Attach:

Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.

Wire Bonding

RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 gr ams. All bonds should be made with a nominal stage temperature of 150 deg. C . A minim um amount of ultrasonic energy should be applied to achie ve reliab le bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).

MIXERS - CHIP

For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at [email protected]

5 - 49