Page 1
MICROWAVE CORPORATION
HMC261
GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER 20 - 40 GHz
FEBRUARY 2001
Features
STABLE GAIN vs. TEMPERATURE: 14dB ± 1.5 dB
1
HIGH REVERSE ISOLATION : 40 ~ 50 dB
P1dB OUTPUT POWER: +12 dBm
SMALL SIZE: 1.3mm x 1.7mm
AMPLIFIERS
DIE
V01.05.00
General Description
The HMC261 chip is a GaAs MMIC distributed
amplifier which covers the frequency range of
20 to 40 GHz. The chip can easily be integrated
into Multi-Chip Modules (MCMs) due to its small
(2.21 mm
PHEMT process, operating from a single bias
supply of + 3 to +4V with a P1dB output power
of +12 dBm. This amplifier can be used in
microwave & millimeter wave point-to-point radios, Local Multi-Point Distribution Systems
(LMDS), VSAT, and other SATCOM applications. All data is with the chip in a 50 ohm test
fixture connected via 0.025 mm (1 mil) diameter
wire bonds of minimal length 0.31 mm (<12 mils).
The HMC261 may be used to drive the LOs of
HMC mixers such as the HMC203 or HMC259.
2
) size. The chip utilizes a GaAs
Guaranteed Performance, Vdd = +4V, -55 to +85 deg C
retemaraP .niM .pyT .xaM .niM .pyT .xaM stinU
egnaRycneuqerF04-0223-72zHG
niaG83181114171Bd
ssoLnruteRtupnI3968Bd
ssoLnruteRtuptuO40178 Bd
noitalosIesreveR23540454Bd
)Bd1P(noisserpmoCBd1rofrewoPtuptuO821921mBd
)tasP(rewoPtuptuOdetarutaS11311131mBd
)3PI(tpecretnIredrOdrihTtuptuO02320232mBd
erugiFesioN5.731701Bd
)ddV(egatloVylppuS57.30.452.457.30.452.4cdV
)ddI(tnerruCylppuS57095709Am
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 2
Page 2
MICROWAVE CORPORATION
HMC261 MEDIUM POWER DISTRIBUTED AMPLIFIER 20 - 40 GHz
HMC261
V01.05.00
Gain vs. Temperature @ Vdd = +4V
20
18
-55 C
16
14
12
10
GAIN (dB)
8
6
4
2
0
15 20 25 30 35 40
+85 C
+25 C
FREQUENCY (GHz)
Return Loss @ Vdd = +4V
0
-2
-4
-6
-8
-10
-12
-14
RETURN LOSS (dB)
-16
-18
-20
15 20 25 30 35 40
S11 (Input)
S22 (Output)
FREQUENCY (GHz)
FEBRUARY 2001
Gain vs. Temperature @ Vdd = +3V
20
18
-55 C
16
14
12
10
GAIN (dB)
8
6
4
2
0
15 20 25 30 35 40
+85 C
+25 C
FREQUENCY (GHz)
Return Loss @ Vdd = +3V
0
-2
-4
-6
-8
-10
-12
-14
RETURN LOSS (dB)
-16
-18
-20
15 20 25 30 35 40
S11 (Input)
S22 (Output)
FREQUENCY (GHz)
1
AMPLIFIERS
DIE
Reverse Isolation @Vdd = +4V
0
-10
-20
-30
-40
-50
REVERSE ISOLATION (dB)
-60
-70
15 20 25 30 35 40
FREQUENCY (GHz)
Reverse Isolation @Vdd = +3V
0
-10
-20
-30
-40
-50
REVERSE ISOLATION (dB)
-60
-70
15 20 25 30 35 40
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 3
Page 3
MICROWAVE CORPORATION
HMC261 MEDIUM POWER DISTRIBUTED AMPLIFIER 20 - 40 GHz
HMC261
FEBRUARY 2001
Noise Figure vs. Vdd
1
15
14
13
12
11
10
AMPLIFIERS
DIE
9
Noise Figure (dB)
8
7
6
5
20 22 24 26 28 30 32 34 36 38 40
Vdd= +4V
FREQUENCY (GHz)
Vdd= +3V
V01.05.00
P1dB Output Power vs. Temperature
@ Vdd = +4V
20
18
16
14
12
10
8
6
P1dB OUTPUT (dBm)
4
2
0
20 22 24 26 28 30 32 34 36 38 40
+25C
FREQUENCY (GHz)
-55C
+85C
Output IP3 vs. Temperature
@ Vdd = +4V
30
+25C
25
20
+85C
15
THIRD ORDER INTERCEPT (dBm)
10
20 22 24 26 28 30 32 34 36 38 40
FREQUENCY (GHz)
-55C
Output IP3 vs. Temperature
@ Vdd = +3V
30
25
20
15
+85C
THIRD ORDER INTERCEPT (dBm)
10
20 22 24 26 28 30 32 34 36 38 40
FREQUENCY (GHz)
-55C
+25C
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1 - 4
Page 4
MICROWAVE CORPORATION
HMC261 MEDIUM POWER DISTRIBUTED AMPLIFIER 20 - 40 GHz
HMC261
V01.05.00
Schematic
(+3V to +4V)
Vdd
RF OUTRF IN
Ground
(Backside)
NOTE: A 100pF single layer chip bypass capacitor is recommended
on the Vdd port no further than 0.762 mm (30mils) from the HMC261
Absolute Maximum Ratings
)ddV(egatloVylppuScdV5.5+
)cT(erutrepmeTlennahCC°571
)ediskcaBlennahC(
erutarepmeTegarotSC°051+ot56-
erutarepmeTgnitarepOC°58+ot55-
Outline ( See Die Handling, Mounting, Bonding Note Page 1 - 7 )
Vdd
FEBRUARY 2001
)V3+=ddV()niFR(rewoPtupnImBd61+
)cj(ecnatsiseRlamrehT
W/C°09
1
AMPLIFIERS
DIE
Backside is
RF IN
RF OUT
ALL DIMENSION IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BOND PAD SPACING, CTR-CTR: 0.150 (0.006)
BACKSIDE METALLIZATION : GOLD
BOND PAD METALLIZATION : GOLD
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
Ground
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Page 5
MICROWAVE CORPORATION
HMC261 MEDIUM POWER DISTRIBUTED AMPLIFIER 20 - 40 GHz
HMC261
FEBRUARY 2001
MIC Assembly Techniques for HMC261
1
AMPLIFIERS
DIE
V01.05.00
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin
film substrates are recommended for bringing RF to and from the chip (Figure
1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the
die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar
with the surface of the substrate. One way to accomplish this is to attach the
0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat
spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm
(3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. The photo in figure 3 shows
a typical assembly for the HMC261 MMIC chip.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
Figure 3: Typical HMC261 Assembly
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MICROWAVE CORPORATION
HMC261 MEDIUM POWER DISTRIBUTED AMPLIFIER 20 - 40 GHz
HMC261
V01.05.00
FEBRUARY 2001
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically
conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
1
AMPLIFIERS
DIE
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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