Datasheet HMC314 Datasheet (Hittite)

MICROWAVE CORPORATION

HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz

HMC314

FEBRUARY 2001

Features

P1dB Output Power: + 18 dBm

1

Output IP3: +29 dBm

Single Supply: 5V

Ultra Small SOT26 Package

AMPLIFIERS

SMT

V00.1100

General Description

The HMC314 is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC amplifier that
operates from a single positive supply. This
amplifier also incorporates a power down fea­ture. When the “Vpd” pin is held low, the amplifier
will shut down. The surface mount SOT26 am­plifier can be used as a broadband gain stage for
wideband applications. The amplifier provides
12 dB of gain and +22 dBm of saturated power
while operating from a single positive +5v sup­ply. The HMC314 is optimized in gain and return
loss for the MMDS (2.2-2.7 GHz) and Wireless
Local Loop Applications (3.5 GHz) bands. At a
height of 1.45mm, the SOT26 is ideal for low
profile portable wireless devices and WLAN
systems.

Guaranteed Performance,

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)ccI(tnerruCylppuS 051Am

)dpV(egatloVlortnoC 5/0stloV

)dpI(tnerruClortnoC 21/100.Am

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

-40 to +85 Deg C

R,V5+=sV

SAIB

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MICROWAVE CORPORATION

HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz

HMC314

V00.1100

Gain & Return Loss

20
15
10

5
0

-5

-10

RESPONSE (dB)

-15

-20

-25
01234567

FREQUENCY (GHz)

S11
S21
S22

Gain vs. Temperature

20

15

10

GAIN (dB)

5

0

0.511.522.533.544.55
FREQUENCY (GHz)

FEBRUARY 2001

+25C
+85C

-40C

Input Return Loss vs. Temperature Output Return Loss vs. Temperature

0

-5

-10

-15

RETURN LOSS (dB)

-20

+25C
+85C

-40C

0

-4

-8

-12

RETURN LOSS (dB)

-16

+25C
+85C

-40C

1

AMPLIFIERS

SMT

-25

0.511.522.533.544.55
FREQUENCY (GHz)

-20

0.511.522.533.544.55
FREQUENCY (GHz)

Reverse Isolation vs. Temperature

0

-10

-20

-30

ISOL A T IO N (dB )

-40

-50

0.511.522.533.544.55
FREQUENCY (GHz)

+25C
+85C

-40C

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 127

MICROWAVE CORPORATION

HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz

HMC314

FEBRUARY 2001

P1dB vs. Temperature Psat vs. Temperature

1

P1dB (dBm)

AMPLIFIERS

SMT

Power Compression @ 1 GHz

25

20

15

10

5

0

0.511.522.533.544.55
FREQUENCY (GHz)

25

Pout (d Bm )

20

15

Gain (dB)
PAE (%)

+25C
+85C

-40C

25

20

15

10

Psat (dBm)

5

0

0.511.522.533.544.55
FREQUENCY (GHz)

Power Compression @ 3 GHz

25

20

15

Pout (dBm)
Gain (dB)
PAE (%)

V00.1100

+25C
+85C

-40C

10

5

0

Pout (dBm), Gain (dB), PAE (%)

-5

-8 -6 -4 -2 0 2 4 6 8 1 0 12 14 16
INPUT POWER (dBm)

10

5

0

Pout (dBm), Gain (dB), PAE (%)

-5

-8 -6 -4 -2 0 2 4 6 8 1 0 12 14 16
INPUT POWER (dBm)

Output IP3 vs. Temperature

40

35

30

25

20

IP3 (dBm)

15

10

5

0

0.511.522.533.544.55

+25C
+85C

-40C

FREQUENCY (GHz)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

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MICROWAVE CORPORATION

HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz

HMC314

V00.1100

FEBRUARY 2001

Schematic

Ω Ω

Note:

1. Requires a 10Ω resistor (RBIAS) in series with the Vcc line and a 160Ω resistor in series with the Vpd line.

2. Requires blocking capacitors on Pins 1 and 3.

3. Requires bypass capacitors on Vcc and Vpd line as shown.

1

AMPLIFIERS

SMT

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

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MICROWAVE CORPORATION

HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz

HMC314

FEBRUARY 2001

Absolute Maximum Ratings

1

AMPLIFIERS

T ruth Table

SMT

Outline

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V00.1100

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etatS

1. MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC.
B) LEADFRAME & PADDLE MATERIAL: COPPER ALLOY

2 . PLATING : LEAD & PADDLE- TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005(±0.13).

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

4. CHARACTERS TO HELVETICA MEDIUM, .020 HIGH

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE

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MICROWAVE CORPORATION

HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz

HMC314

V00.1100

Evaluation PCB for HMC314

FEBRUARY 2001

1

AMPLIFIERS

SMT

The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to
that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes.
The evaluation circuit board as shown is available from Hittite upon request.

Evaluation Circuit Board Layout Design Details

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

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