CDIDI CD645, CD5196, CD5195, CD5194, CD486B Datasheet

•GENERAL PURPOSE SILICON DIODES

•ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE

•COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES EXCEPT SOLDER REFLOW

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

ELECTRICAL CHARACTERISTICS									@ 25°C, unless otherwise specified
			V RM				V	RWM					I O			I O	°C	IFSM
TYPE													T		A	=+150		tp = 1/120 S
																		T A =25	°C
			V (pk)				V (pk)						mA			mA		A
CD483B				80				70				200			50			2
CD485B		180					180			200				50				2
CD486B		250					225			200				50				2
CD645		270					225			400				150				5
CD5194				80				70				200			50			2
CD5195		180					180			200				50				2
CD5196		250					225			200				50				2
			V	F	(1)		I	at V			I	R2	at V	I	R3	at V		CAP
							R1	RWM					RM			RWM
TYPE						T	A	+25 °C			T A		+25 °C	T		A +150	°C	@V	R
																		=4V
			V dc				nA dc						A			A dc		pF
CD483B			0.8	- 1.0			25				100				5			–
CD485B			0.8	- 1.0			25				100				5			–
CD486B			0.8	- 1.0			25				100				5			–
CD645			0.8	- 1.0			50					50			25			2.0
CD5194			0.8	- 1.0			25				100				5			–
CD5195			0.8	- 1.0			25				100				5			–
CD5196			0.8	- 1.0			25				100				5			–
NOTE 1	AT 100mA (pulsed) except for CD645

which is at 400mA (pulsed)

CD483B

CD485B

CD486B

CD645

AND

CD5194 thru CD5196

24 MILS

12 MILS

24 MILS

12 MILS

DESIGN DATA

METALLIZATION:
	Top: (Anode) ....................	Al
	Back: (Cathode)..............	Au
AL THICKNESS	............	25,000 Å Min
GOLD THICKNESS	........	4,000 Å Min
CHIP THICKNESS	..................	10 Mils
TOLERANCES:	ALL

Dimensions ± 2 mils

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