CDIDI 1N5196, 1N5195, 1N5194 Datasheet

• AVAILABLE IN	JAN, JANTX,	AND	JANTXV	1N5194
PER MIL-PRF-19500/118				1N5195
• GENERAL PURPOSE SILICON DIODES				1N5196
• METALLURGICALLY BONDED

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA

Derating: 1.2 mA/°C From 25°C to 150°C

1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified

TYPE

V

RM

V

RWM

I O

I O

I FSM

T A

= 150°C

T

P

= 1/120 s

T

A = 25°C

V (pk)

V (pk)

mA

mA

A

1N5194

80

70

200

50

2

1N5195

180

180

200

50

2

1N5196

250

225

200

50

2

FIGURE 1

DESIGN

DATA

TYPE

V

F

I R1 at

V RWM

I R2 at V

RM

I R3 at V

RWM

@100mA

T

A

= 25°C

T

A = 25°C

T

A = 150°C

CASE:

Hermetically sealed glass

V dc

nA dc

µA

µA dc

case. DO

– 35 outline.

1N5194

0.8 - 1.0

25

100

5

1N5195

0.8 - 1.0

25

100

5

1N5196

0.8 - 1.0

25

100

5

LEAD

MATERIAL:

Copper clad steel.

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (

R

O

JEC

):

250

˚C/W maximum

THERMAL IMPEDANCE: (

Z

O

JX ):

70

˚C/W maximum

POLARITY:

Cathode end is banded.

MOUNTING POSITION:

ANY.

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