Low drift 2.5 V reference: 2 ppm/°C typical
Tiny package: 3 mm × 3 mm, 16-lead LFCSP
Total unadjusted error (TUE): ±0.1% of FSR maximum
Offset error: ±1.5 mV maximum
Gain error: ±0.1% of FSR maximum
High drive capability: 20 mA, 0.5 V from supply rails
User selectable gain of 1 or 2 (GAIN pin)
Reset to zero scale or midscale (RSTSEL pin)
1.8 V logic compatibility
50 MHz SPI with readback or daisy chain
Low glitch: 0.5 nV-sec
Robust 4 kV HBM and 1.5 kV FICDM ESD rating
Low power: 3.3 mW at 3 V
2.7 V to 5.5 V power supply
−40°C to +105°C temperature range
APPLICATIONS
Digital gain and offset adjustment
Programmable attenuators
Industrial automation
Data acquisition systems
LOGIC
SCLK
SYNC
SDIN
SDO
Quad, 10-Bit nanoDAC
FUNCTIONAL BLOCK DIAGRAM
REF
STRING
DAC A
STRING
DAC B
STRING
DAC C
STRING
DAC D
GAIN
×1/×2
REFERENCE
AD5317R
INTERFACE LOGIC
LDAC RESET
DD
INPUT
REGISTER
INPUT
REGISTER
INPUT
REGISTER
INPUT
REGISTER
DAC
REGISTER
DAC
REGISTER
DAC
REGISTER
DAC
REGISTER
POWER-ON
RESET
RSTSELGAIN
Figure 1.
2.5V
BUFFER
BUFFER
BUFFER
BUFFER
POWER-
DOWN
LOGIC
®
V
A
OUT
V
B
OUT
V
C
OUT
V
D
OUT
GENERAL DESCRIPTION
The AD5317R, a member of the nanoDAC® family, is a low
power, quad, 10-bit buffered voltage output DAC. The device
includes a 2.5 V, 2 ppm/°C internal reference (enabled by
default) and a gain select pin giving a full-scale output of 2.5 V
(gain = 1) or 5 V (gain = 2). The device operates from a single
2.7 V to 5.5 V supply, is guaranteed monotonic by design, and
exhibits less than 0.1% FSR gain error and 1.5 mV offset error
performance. The device is available in a 3 mm × 3 mm LFCSP
and a TSSOP package.
The AD5317R also incorporates a power-on reset circuit and a
RSTSEL pin that ensures that the DAC outputs power up to
zero scale or midscale and remain at that level until a valid write
takes place. Each part contains a per-channel power-down
feature that reduces the current consumption of the device to
4 µA at 3 V while in power-down mode.
The AD5317R employs a versatile SPI interface that operates at
clock rates up to 50 MHz and contains a V
The AD5317and AD5317Rare not pin-to-pin or software compatible.
PRODUCT HIGHLIGHTS
1. Precision DC Performance.
Total unadjusted error: ±0.1% of FSR maximum
Offset error: ±1.5 mV maximum
Gain error: ±0.1% of FSR maximum
2. Low Drift 2.5 V On-Chip Reference.
2 ppm/°C typical temperature coefficient
5 ppm/°C maximum temperature coefficient
3. Two Package Options.
3 mm × 3 mm, 16-lead LFCSP
16-lead TSSOP
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without n otice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
AD5317R Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Gain Error ±0.02 ±0.1 % of FSR
Total Unadjusted Error ±0.01 ±0.1 % of FSR External reference; gain = 2; TSSOP
±0.2 % of FSR Internal reference; gain = 1; TSSOP
Offset Error Drift
Gain Temperature Coefficient2 ±1 ppm Of FSR/°C
DC Power Supply Rejection Ratio2 0.15 mV/V DAC code = mi dscale; VDD = 5 V ± 10%
DC Crosstalk2 ±2 µV Due to single channel, full-scale output change
±3 µV/mA Due to load current change
±2 µV Due to power-down (per channel)
OUTPUT CHARACTERISTICS2
Output Voltage Range 0 V
0 2 × V
Capacitive Load Stability 2 nF RL = ∞
= 2.5 V; 1.8 V ≤ V
REF
2
≤ 5.5 V; all specifications T
LOGIC
MIN
to T
±1 µV/°C
V Gain = 1
V Gain = 2, see Figure 29
, unless otherwise noted. RL = 2 kΩ; CL = 200 pF.
MAX
Resistive Load3 1 kΩ
Load Regulation 80 µV/mA 5 V ± 10%, DAC code = midscale; −30 mA ≤ I
+30 mA
80 µV/mA 3 V ± 10%, DAC code = midscale; −20 mA ≤ I
+20 mA
Short-Circuit Current4 40 mA
Load Impedance at Rails5 25 Ω See Figure 29
Power-Up Time 2.5 µs Coming out of power-down mode; VDD = 5 V
REFERENCE OUTPUT
Output Voltage6 2.4975 2.5025 V At ambient
Reference TC
2 5 ppm/°C See the Terminology section
Output Impedance2 0.04 Ω
Output Voltage Noise2 12 µV p-p 0.1 Hz to 10 Hz
Load Regulation, Sourcing2 20 µV/mA At ambient
Load Regulation, Sinking2 40 µV/mA At ambient
Output Current Load Capability2
±5
mA VDD ≥ 3 V
Line Regulation2 100 µV/V At ambient
Long-Term Stability/Drift2 12 ppm After 1000 hours at 125°C
Thermal Hysteresis2 125 ppm First cycle
25 ppm Additional cycles
OUT
OUT
≤
≤
Rev. 0 | Page 3 of 28
AD5317R Data Sheet
INL
LOGIC
INH
LOGIC
Pin Capacitance
2
pF
SINK
LOGIC
SOURCE
LOGIC
LOGI C
REF
Parameter Min Typ Max Unit Test Conditions/Comments
LOGIC INPUTS2
Input Current ±2 µA Per pin
Input Low Voltage, V
Input High Voltage, V
LOGIC OUTPUTS (SDO)2
Output Low Voltage, VOL 0.4 V I
Output High Voltage, VOH V
Floating State Output
Capacitance
POWER REQUIREMENTS
V
I
VDD 2.7 5.5 V Gain = 1
V
IDD VIH = VDD, VIL = G ND, VDD = 2.7 V to 5.5 V
Normal Mode9 0.59 0.7 mA Internal reference off
1.1 1.3 mA Internal reference on, at full scale
All Power-Down Modes10 1 4 µA −40°C to +85°C
6 µA −40°C to +105°C
1
DC specifications tested with the outputs unloaded, unless otherwise noted. Upper dead band = 10 mV and exists only when V
with gain = 2. Linearity calculated using a reduced code range of 4 to 1020.
V
DD
2
Guaranteed by design and characterization; not production tested.
3
Channel A and Channel B can have a combined output current of up to 30 mA. Similarly, Channel C and Channel D can have a combined output current of up to
30 mA up to a junction temperature of 110°C.
4
VDD = 5 V. The device includes current limiting that is intended to protect the device during temporary overload conditions. Junction temperature can be exceeded
during current limit. Operation above the specified maximum operation junction temperature may impair device reliability.
5
When drawing a load current at either rail, the output voltage headroom with respect to that rail is limited by the 25 Ω typical channel resistance of the output
devices. For example, when sinking 1 mA, the minimum output voltage = 25 Ω × 1 mA = 25 mV (see Figure 29).
6
Initial accuracy presolder reflow is ±750 µV; output voltage includes the effects of preconditioning drift. See the Terminology section.
7
Reference is trimmed and tested at two temperatures and is characterized from −40°C to +105°C.
8
Reference temperature coefficient calculated as per the box method. See the Terminology section for more information.
9
Interface inactive. All DACs active. DAC outputs unloaded.
10
All DACs powered down.
0.3 × V
0.7 × V
V
− 0.4 V I
4 pF
1.8 5.5 V 3 µA
+ 1.5 5.5 V Gain = 2
V
= 200 μA
= 200 μA
= VDD with gain = 1 or when V
REF
/2 =
REF
Rev. 0 | Page 4 of 28
Data Sheet AD5317R
OUT
AC CHARACTERISTICS
VDD = 2.7 V to 5.5 V; V
otherwise noted.
1
Table 3.
Parameter2 Min Typ Max Unit Test Conditions/Comments3
Output Voltage Settling Time 5 7 µs ¼ to ¾ scale settling to ±1 LSB
Slew Rate 0.8 V/µs
Digital-to-Analog Glitch Impulse 0.5 nV-sec 1 LSB change around major carry
Digital Feedthrough 0.13 nV-sec
Digital Crosstalk 0.1 nV-sec
Analog Crosstalk 0.2 nV-sec
DAC-to-DAC Crosstalk 0.3 nV-sec
Total Harmonic Distortion4 −80 dB At ambient, BW = 20 kHz, VDD = 5 V, f
Output Noise Spectral Density 300 nV/√Hz DAC code = midscale, 10 kHz, gain = 2
Output Noise 6 µV p-p 0.1 Hz to 10 Hz
1
Guaranteed by design and characterization, not production tested.
2
See the Terminology section.
3
Temperature range is −40°C to +105°C, typical @ 25°C.
4
Digitally generated sine wave @ 1 kHz.
= 2.5 V; RL = 2 kΩ to GND; CL = 200 pF to GND; 1.8 V ≤ V
REF
≤ 5.5 V; all specifications T
LOGIC
to T
MIN
= 1 kHz
MAX
, unless
Rev. 0 | Page 5 of 28
AD5317R Data Sheet
LOGIC
LOGIC
Data Setup Time
t5 8 5
ns
t
4
t
3
SCLK
SYNC
SDIN
t
1
t
2
t
5
t
6
t
7
t
8
DB23
t
9
t
10
t
11
LDAC
1
LDAC
2
t
12
1
ASYNCHRONOUS LDAC UPDATE MODE .
2
SYNCHRONOUS LDAC UPDATE MODE .
RESET
t
13
t
14
V
OUT
DB0
10800-002
TIMING CHARACTERISTICS
All input signals are specified with tR = tF = 1 ns/V (10% to 90% of VDD) and timed from a voltage level of (VIL + VIH)/2. See Figure 2.
V
= 2.7 V to 5.5 V, 1.8 V ≤ V
DD
Table 4.
1.8 V ≤ V
Parameter1 Symbol Min Max Min Max Unit
SCLK Cycle Time t1 33 20 ns
SCLK High Time t2 16 10 ns
SCLK Low Time t3 16 10 ns
to SCLK Falling Edge Setup Time t4 15 10 ns
SYNC
Data Hold Time t6 8 5 ns
SCLK Falling Edge to
Minimum
Falling Edge to SCLK Fall Ignore t9 16 10 ns
SYNC
Pulse Width Low t10 25 15 ns
LDAC
High Time t8 20 20 ns
SYNC
SCLK Falling Edge to
SCLK Falling Edge to
Minimum Pulse Width Low t13 30 30 ns
RESET
Pulse Activation Time t14 30 30 ns
RESET
Rising Edge t7 15 10 ns
SYNC
Rising Edge t11 30 20 ns
LDAC
Falling Edge t12 20 20 ns
LDAC
Power-Up Time2 4.5 4.5 µs
1
Maximum SCLK frequency is 50 MHz at VDD = 2.7 V to 5.5 V, 1.8 V ≤ V
2
Time to exit power-down to normal mode of AD5317R operation, 32nd clock edge to 90% of DAC midscale value, with output unloaded.
LOGIC
≤ 5.5 V; V
= 2.5 V. All specifications T
REF
≤ VDD. Guaranteed by design and characterization; not production tested.
LOGIC
MIN
to T
, unless otherwise noted.
MAX
< 2.7 V 2.7 V ≤ V
≤ 5.5 V
Figure 2. Serial Write Operation
Rev. 0 | Page 6 of 28
Data Sheet AD5317R
LOGIC
LOGIC
200µAI
OL
200µAI
OH
VOH (MIN)
TO OUTPUT
PIN
C
L
20pF
10800-003
t
4
t
5
t
6
t
8
SDO
SDIN
SYNC
SCLK
4824
DB23DB0DB23DB0
DB23
INPUT WORD FOR DAC NUNDEFINED
INPUT WORD FOR DAC N + 1INPUT WORD FOR DAC N
DB0
t
11
t
12
t
10
10800-004
DAISY-CHAIN AND READBACK TIMING CHARACTERISTICS
All input signals are specified with tR = tF = 1 ns/V (10% to 90% of VDD) and timed from a voltage level of (VIL + VIH)/2. See Figure 4
and Figure 5. V
Table 5.
1.8 V ≤ V
Parameter1 Symbol Min Max Min Max Unit
SCLK Cycle Time t1 66 40 ns
SCLK High Time t2 33 20 ns
SCLK Low Time t3 33 20 ns
to SCLK Falling Edge t4 33 20 ns
SYNC
Data Setup Time t5 5 5 ns
Data Hold Time t6 5 5 ns
SCLK Falling Edge to
Minimum
Minimum
SDO Data Valid from SCLK Rising Edge t10 36 25 ns
SCLK Falling Edge to
Rising Edge to SCLK Rising Edge t12 15 10 ns
SYNC
1
Maximum SCLK frequency is 25 MHz or 15 MHz at VDD = 2.7 V to 5.5 V, 1.8 V ≤ V
Circuit and Timing Diagrams
= 2.7 V to 5.5 V, 1.8 V ≤ V
DD
Rising Edge t7 15 10 ns
SYNC
High Time t8 60 30 ns
SYNC
High Time t9 60 30 ns
SYNC
Rising Edge t11 15 10 ns
SYNC
LOG IC
≤ 5.5 V; V
= 2.5 V. All specifications T
REF
< 2.7 V 2.7 V ≤ V
≤ VDD. Guaranteed by design and characterization; not production tested.
LOGIC
MIN
to T
, unless otherwise noted.
MAX
≤ 5.5 V
Figure 3. Load Circuit for Digital Output (SDO) Timing Specifications
Figure 4. Daisy-Chain Timing Diagram
Rev. 0 | Page 7 of 28
AD5317R Data Sheet
SYNC
t
8
t
6
SCLK
24
1
24
1
t
9
t
4
t
2
t
7
t
3
t
1
DB23DB0DB23DB0
SDIN
NOP CONDITIONINPUT WORD SPECIFIES
REGIST E R TO BE READ
t
5
DB23DB0DB23DB0
SDO
SELECTED REGISTER DATA
CLOCKED OUT
UNDEFINED
t
10
10800-005
Figure 5. Readback Timing Diagram
Rev. 0 | Page 8 of 28
Data Sheet AD5317R
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 6.
Parameter Rating
VDD to GND −0.3 V to +7 V
V
to GND −0.3 V to +7 V
LOGI C
V
to GND −0.3 V to VDD + 0.3 V
OUT
V
to GND −0.3 V to VDD + 0.3 V
REF
Digital Input Voltage to GND −0.3 V to V
Operating Temperature Range −40°C to +105°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 125°C
16-Lead TSSOP, θJA Thermal
Impedance, 0 Airflow (4-Layer Board)
16-Lead LFCSP, θJA Thermal
Impedance, 0 Airflow (4-Layer Board)
Reflow Soldering Peak
Temperature, Pb Free (J-STD-020)
ESD
HBM1 4 kV
FICDM 1.5 kV
1
Human body model (HBM) classification.
112.6°C/W
70°C/W
260°C
LOGI C
+ 0.3 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. 0 | Page 9 of 28
Loading...
+ 19 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.