®
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
15 A
600 V (in series)
Tj (max) 150 °C
(max) 2.6 V
V
F
(typ.) 4.8 A
I
RM
FEATURES AND BENEFITS
Especially suited as boost diode in continuous
■
mode power factor correctors and hard
switching conditions.
Designed for high di/dt operation. Hyperfast
■
recovery current to compete with GaAs devices.
Allows downsizing of mosfet and heatsinks.
■
Internal ceramic insulated devices with equal
thermal conditions for both 300V diodes.
■ Insulation (2500V RMS) allows placement on
same heatsink as mosfet and flexible
heatsinking on common or separate heatsink.
■
Matched diodes for typical PFC application
without need for voltage balance network.
■
C = 7pF
STTH1506TPI
Tandem 600V Hyperfast Rectifer
12
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diodecomposedof two300V dicein
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
F
/dt.
high dI
3
1
2
(insulated)
3
TOP3I
ABSOLUTE RATINGS (limiting values for both diodes in series)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FSM
T
stg
Tj
TM: TURBOSWITCH is a trademark of STMicroelectronics
May 2002 - Ed: 1A
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
600 V
26 A
130 A
-65 +150 °C
+ 150 °C
1/5
STTH1506TPI
THERMAL AND POWER DATA
Symbol Parameter Test conditions Value Unit
R
R
R
th (j-c)
th (c)
th (j-c)
P
Junction to case Per diode
Junction to case Total
1
Conduction power dissipation for
both diodes
Coupling
I
=15A δ= 0.5
F(AV)
Tc = 70°C
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
2.9 °C/W
0.3
1.6
50 W
*
I
R
Reverse leakage current
V
**
F
Pulse test: * tp = 5ms, δ <2%
Forward voltage drop I
** tp = 380µs, δ <2%
V
R=VRRM
Tj = 25°C
Tj = 125°C
= 15A Tj=25°C
F
Tj = 125°C
30 200
2.1 2.6
20 µA
3.6 V
To evaluate the maximum conduction losses use the following equation:
P=1.8xI
F(AV)
+ 0.053 x I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
trr
Reverse recovery
time
= 0.5 A Irr = 0.25A
I
F
IR=1A
I
=1A dIF/dt = - 50A/µs
F
Tj = 25°C
16 ns
35
VR=30V
S
I
RM
factor
Reverse recovery
current
VR= 400 V IF=15A
dIF/dt = -200 A/µs
Tj = 125°C
4.8 6.0 A
0.4 -
TURN-ON SWITCHING CHARACTERISTICS
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
tfr
Forward
recovery time
V
FP
Forward
=15A dIF/dt = 100A/µs,
I
F
Tj = 25°C
VFR=1.1xVFmax
IF=15A dIF/dt = 100 A/µs Tj = 25°C
200 ns
6V
recovery voltage
2/5
STTH1506TPI
Fig.1: Conduction losses versus averagecurrent.
P(W)
55
50
45
40
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
35
30
25
20
15
T
10
5
IF(AV)(A)
0
δ
=tp/T
tp
02468101214161820
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
δ = 0.2
0.4
δ = 0.1
0.3
0.2
Single pulse
0.1
tp(s)
0.0
1.E-03 1.E-02 1.E-01 1.E+00
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
130
120
110
100
T=125°C
j
90
80
Tj=125°C
(Maximum values)
(Maximum values)
70
T=125°C
60
50
j
(Typical values)
40
T=25°C
30
20
10
VFM(V)
j
(Maximum values)
0
012345678
Fig.4: Peak reverserecovery current versus dIF/dt
(90% confidence).
IRM(A)
22
V =400V
R
20
j
T=125°C
18
16
14
12
10
I =0.5 x IF F(AV)
I =0.25 x IF F(AV)
I=IF F(AV)
8
6
4
2
0
dIF/dt(A/µs)
0 200 400 600 800 1000
I =2 x IF F(AV)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
100
90
80
70
60
50
I =2 x IF F(AV)
40
30
I=IF F(AV)
20
10
I =0.5 x IF F(AV)
dIF/dt(A/µs)
0
0 200 400 600 800 1000
V =400V
R
j
T=125°C
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
350
V =400V
R
j
T=125°C
300
250
200
150
100
50
0
0 200 400 600 800 1000
I =2 x IF F(AV)
I=IF F(AV)
I =0.5 x IF F(AV)
dIF/dt(A/µs)
3/5
STTH1506TPI
Fig. 7: Softness factor versus dIF/dt (typical
values).
S factor
0.80
I=I
F F(AV)
R
V =400V
j
T=125°C
0.70
0.60
0.50
0.40
0.30
0.20
0 200 400 600 800 1000
dIF/dt(A/µs)
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence).
dI
F
VFP(V)
16
I=I
F F(AV)
j
T=125°C
14
12
10
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Fig. 8: Relative variations of dynamic parameters
versus junction temperature.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25 50 75 100 125
S factor
IRM
Tj(°C)
I=I
F F(AV)
R
V =400V
j
Reference:T =125°C
Fig. 10: Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
400
350
300
250
200
150
100
50
0
0 100 200 300 400 500
dIF/dt(A/µs)
I=I
F F(AV)
FR F
V =1.1 x V max.
j
T=125°C
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
1000
F=1MHz
OSC
V =30mV
j
T=25°C
100
10
1 10 100 1000
4/5
VR(V)
PACKAGE MECHANICAL DATA
TOP3I
STTH1506TPI
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
J 5.4 5.65 0.213 0.222
K 3.4 3.65 0.134 0.144
L 4.08 4.17 0.161 0.164
P 1.20 1.40 0.047 0.055
R 4.60 0.181
Ordering code Marking Package Weight Base qty Deliverymode
STTH1506TPI STTH1506TPI TOP3I 4.46 g. 30 Tube
■
Epoxy meets UL94,V0
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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5/5
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