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Main product characteristics
STTH1502
Ultrafast recovery diode
I
F(AV)
V
RRM
T
(max) 175° C
j
(typ) 0.85 V
V
F
(typ) 20 ns
t
rr
15 A
200 V
Features and benefits
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery time
■ High junction temperature
■ Insulated packages
– TO-220FPAC
Electrical insulation 2000 V
DC
– TO-220AC Ins
Electrical insulation 2500 V
RMS
Description
The STTH1502 uses ST's new 200V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
K
TO-220AC
STTH1502D
A
A
K
K
A
K
TO-220FPAC
STTH1502FP
A
K
TO-220AC Ins
STTH1502DI
Packaged in TO-220AC, TO-220FPAC, and
Order codes
TO-220 Ins, this device is intended for use in low
voltage, high frequency inverters, free wheeling
Part Number Marking
and polarity protection.
STTH1502D STTH1502
STTH1502FP STTH1502
STTH1502DI STTH1502DI
October 2006 Rev 2 1/10
www.st.com
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Characteristics STTH1502
1 Characteristics
Table 1. Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
Table 2. Thermal parameters
Repetitive peak reverse voltage 200 V
RMS forward current 32 A
= 130° C
TO-220AC
Average forward current, δ = 0.5
TO-220FPAC
T
c
= 105° C
T
c
= 85° C
T
c
Surge non repetitive forward current tp = 10 ms Sinusoidal 150 A
Storage temperature range -65 to + 175 ° C
stg
Maximum operating junction temperature 175 ° C
T
j
15 ATO-220AC Ins
Symbol Parameter Value Unit
TO-220AC 2.5
R
th(j-c)
Junction to case
° C/WTO-220AC Ins 3.8
TO-220FPAC 5
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
= 125° C 10 100
T
j
T
= 25° C
j
Tj = 150° C 0.85 0.95
T
= 125° C IF = 30 A 1.05 1.20
j
= 25° C
T
j
Tj = 150° C 1 1.15
= V
V
R
= 15 A
I
F
= 30 A
I
F
RRM
11.1
1.15 1.3
10
T
To evaluate the conduction losses use the following equation:
P = 0.74 x I
F(AV)
+ 0.014 I
F2(RMS)
µA
V
2/10
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STTH1502 Characteristics
Table 4. Dynamic characteristics
Symbol Parameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Test conditions
I
= 1 A, dIF/dt = -50 A/µs,
F
VR = 30 V, Tj = 25° C
= 1 A, dIF/dt = -100 A/µs,
I
F
= 30 V, Tj = 25° C
V
R
= 15 A, dIF/dt = -200 A/µs,
I
F
VR = 160 V, Tj = 125° C
I
= 15 A, dIF/dt = 50 A/µs
F
VFR = 1.1 x V
, Tj = 25° C
Fmax
IF = 15 A, dIF/dt = 50 A/µs,
= 25° C
T
j
Min. Typ Max. Unit
28 36 ns
20 25
5.7 7.2 A
200 ns
1.3 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
IM(A)
100
80
P = 20 WP = 20 W
60
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
δ
P = 10 WP = 10 W
P = 5 WP = 5 W
T
T
I
I
M
M
=tp/T
=tp/T
d
δ
tp
tp
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Tj=150°C
Tj=25°C
VFM(V)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC)
I
FM
200
180
160
140
120
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Tj=150°C
Tj=25°C
VFM(V)
3/10
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AC
TO-220ACins
tp(s)
0.1
1.E-03 1.E-02 1.E-01 1.E+00