ST STGB7NB40LZ User Manual

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STGB7NB40LZ

N-CHANNEL CLAMPED 14A - D2PAK

INTERNALLY CLAMPED PowerMESH™ IGBT

TYPE V

CES

V

CE(sat)

I

C

STGB7NB40LZ CLAMPED < 1.50 V14A

■ POLYSILICON GATE VOLTAGE DRIVEN

■ LOW THRESHOLD VOLTAGE

■ LOW ON-VOLTAGE DROP

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ HIGH VOLTAGE CLAMPING FEATURE

DESCRIPTION

Using thelatest highvoltage t echnology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IG BTs, the
PowerMESH

™

IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.

APPLICATIONS

■ AUTOMOTIVE IGNITION

3

1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V
V

V

P

E

CES
ECR

GE

I

C

R

G

TOT

E

CL

ECAV

T

stg

T

j

Collector-Emitter Voltage (VGS=0)

CLAMPED V
Reverse Battery Protection 20 V
Gate-Emitter Voltage CLAMPED V
Collector Current (continuous) at 100°C 14 A
Minimum External Gate Resistor 500 Ω
Total Dissipation at TC= 25°C

100 W
Derating Factor 0.66 W/°C
Single Pulse Collector to Emitter Avalanche Energy

=13A;Tj= 150°C (see fig.1-2)

I

C

Reverse Avalanche Energy

= 7 A ;f= 100 Hz ; Tc= 25°C

I

C

Storage Temperature
Operating Junction Temperature

130 mJ

10 mJ

–55 to 175 °C

1/8March 2003

STGB7NB40LZ

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.5 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max (free air) 62.5 °C/W

ELECTRICAL CHARACTERISTICS (T

= 25°C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

BV

(CES)

(ECS)

Collector-Emitter Clamped
Voltage

Emitter Collector Break-down

IC=10mA,VGE=0,

370 400 430 V

Tc= - 40°C to 150°C; RG=1KΩ
IEC= 75 mA, VGE=0, 20 27 V

Voltage

BV

GE

Gate Emitter Break-down

IG=±2mA 12 16 V

Voltage

I

CES

I

GES

Collector-Emitter Leakage
Current

Gate-Emitter Leakage
Current (V

CE

=0)

VGE=200V,VGE=0,RG=1KΩ
Tc=25°C
Tc=150°C

V

=±10V,VCE= 0 1000 µA

GE

25

250

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(SAT)

R

GE

Gate Threshold Voltage VCE=VGE,IC= 1 mA, Tc=25°C

= 1 mA, Tc=150°C

Collector-Emitter Saturation
Voltage

V

CE=VGE,IC

VGE=4.5 V, IC=7A,Tj=25°C
V

=5.0 V, IC=14A,Tc=25°C

GE

Gate Emitter Resistance

1.2

0.75

1.3 1.50

10 20

2.2

1.8

1.9
30

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance 80 pF
Reverse Transfer

Capacitance

Q

g

Gate Charge VCE=40V,IC=7A,

=25V,f=1MHz,VGE=0

CE

V

=5V

GE

910 pF

15 pF

22 nC

µA
µA

V
V

V
V

KΩ

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

=14V,RG=1KΩ,

V

CE

RL=1Ω, VGE=5 V
VCE= 300 V, RG=1KΩ ,

R

=46Ω, VGE=5 V

L

0.9

4.5

4.4

3.6

2/8

t

d(on)

t

d(off)

Delay Time

t

r

Current Rise Time
Delay Time

t

f

Current Fall Time

µs
µs

µs
µs

Thermal Imped ance

STGB7NB40LZ

Output Characteristics

Normalized Gate Threshold Voltage vs Temp. Transconductance

Transfer Characteristics

3/8