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STGF7NB60SL
N-CHANNEL 7A - 600V - TO-220FP
PowerMESH™ IGBT
Table 1: Ge neral Features
TYPE V
STGF7NB60SL 600 V < 1.6 V 7 A
■ POLYSILICON GATE VOLTAGE DRIVEN
■ LOW THRESHOLD VOLTAGE
■ LOW ON -VOL TAGE DR OP
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
CESVCE(sat)
(Max)
@25°C
I
C
@100°C
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve
minimum on-voltage drop for lo w freq uency appl ications (<1kHz).
APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
Figure 1: Package
3
2
1
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STGF7NB60SL GF7NB60SL TO-220FP TUBE
Rev.3
1/9September 2004
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STGF7NB60SL
Table 3: Absolute Maximum ratings
Symbol Parameter Value Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
(1)
CM
P
TOT
V
ISO
T
stg
T
j
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Collector-Emitter Voltage (VGS = 0)
600
Reverse Battery Protection 20
Gate-Emitter Voltage ± 20
Collector Current (continuous) at 25°C15
Collector Current (continuous) at 100°C7
Collector Current (pulsed) 20 A
Total Dissipation at TC = 25°C
25
Derating Factor 0.2 W/°C
Insulation Withstand Voltage A.C. 2500
Storage Temperature
Operating Junction Temperature
– 55 to 150 °C
V
V
V
A
A
W
V
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
IC = 250 µA, VGE = 0 600 V
Voltage
V
BR(ECS)
Emitter-Collector Breakdown
IC = 1mA, VGE = 0 20 V
Voltage
I
CES
I
GES
Collector-Em itter Leak age
Current (V
CE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
V
= Max Rating
GE
Tc=25°C
Tc=125°C
V
= ± 20 V , VCE = 0 ±100 nA
GE
10
100
Table 6: On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage VCE= VGE, IC= 250 µA 1.2 2.4 V
Collector-Em itter Satur ation
Voltage
VGE=4.5 V, IC= 7A, Tj= 25°C
VGE=4.5 V, IC= 7A, Tj= 125°C
1.2
1.1
1.6
µA
µA
V
V
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STGF7NB60SL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
tscw Short Circuit Withstand Time V
Table 8: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
E
r
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
Table 9: Switching Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
tr(V
off
td(
off
t
f
E
(**)
off
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
(**)Turn-off loss es include al so the tail of the collector current.
Cross-over Time
)
Off Voltage Rise Time 1.6 µs
)
Delay Time 5.2 µs
Current Fall Time 1.1 µs
Turn-off Switching Loss 4.1
Cross-over Time
)
Off Voltage Rise Time 2.4 µs
)
Delay Time 6.4 µs
Fall Time 1.7 µs
Turn-off Switching Loss 7.1
= 15 V, IC= 7 A 5 S
CE
= 25V, f = 1 MHz, VGE = 0 800
V
CE
60
10
VCE = 480V, IC = 7 A,
VGE = 5V
(see Figure 20)
V
= 480 V , Tj = 125°C
clamp
20 A
16
2.5
8.5
22 nC
RG = 1 KΩ, VGE=5V
= 0.5 V
ce
BR(CES)
, VGE=5V,
14 µs
Tj = 125°C , RG = 1KΩ
VCC = 480 V, IC = 7 A RG=1KΩ ,
V
= 5 V
GE
1.1
0.25
(see Figure 18)
= 480 V, IC = 7 A RG=1KΩ
V
CC
VGE = 5 V,Tj = 125°C
V
= 480 V, IC = 7 A,
cc
45
2.7
2.7 µs
RGE = 1KΩ , VGE = 5 V
(see Figure 18)
V
= 480 V, IC = 7 A,
cc
R
= 1KΩ , VGE = 5 V
GE
4.4 µs
Tj = 125 °C
(see Figure 18)
pF
pF
pF
nC
nC
µs
µs
A/µs
mJ
mJ
mJ
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STGF7NB60SL
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Curr e nt
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Figure 8: Normalized Collector-Emitter On
Voltage vs Temperature
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STGF7NB60SL
Figure 9: Gate Thereshold vs Tem pera ture
Figure 10: Capacitance Variations
Figure 12: Normalized Breakdown Voltage vs
Temperature
Figure 13: Gate Charge vs G ate-Emitter Voltage
Figure 11: Total Switching Losses vs Gate Resistance
Figure 14: Total Switching Lo sses vs Temp erature
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STGF7NB60SL
Figure 15: Total Switching Losses vs Collector
Current
Figure 16: Thermal Impedance
Figure 17: Turn-Of f S OA
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STGF7NB60SL
Figure 18: Test Circuit for Inductive Load
Swit c hing
Figure 19: Switching Waveforms
Figure 20: Gate Charge Test Circuit
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STGF7NB60SL
Table 10: Revision History
Date Revision Description of Change s
04-June-2004 2 Stylesheet update. No content change
02-Sep-2004 3 Datasheet updated, see table1
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STGF7NB60SL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of s uch inf ormati on nor for a ny infr ing eme nt o f p atent s or o ther ri ghts of third par ties wh ich m ay res ul t from i ts use. N o lic ense i s gran ted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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