(A114-B, Class II)
– 200 V machine model (A115-A)
– 1000 V charged-device model (C101)
Description
The STG5123 is a high speed CMOS low voltage
single analog SPDT (single-pole double-throw)
switch or 2:1 multiplexer/demultiplexer switch
manufactured using silicon gate C
technology. Designed to operate from a 1.65 to
4.5 V supply, this device is ideal for portable
applications.
The device offers very low ON-resistance (1 Ω)
at V
= 4.5 V. Switch S1 is ON (connected to
CC
common ports Dn) when the SEL input is held
high, and OFF (state of high impedance exists
between the two ports) when SEL is held low.
2
MOS
STG5123
Low voltage 1 Ω single SPDT switch
with break-before-make feature
Datasheet − production data
DFN6L
Switch S2 is ON (connected to common port D)
when the SEL input is held low, and OFF (state
of high impedance exists between the two ports)
when SEL is held high.
Additional key features are fast switching speed,
break-before-make delay time and ultra low power
consumption. All inputs and outputs are equipped
with protection circuits to protect against static
discharge, giving them immunity from ESD and
transient excess voltage.
Table 1.Device summary
Order codePackagePackaging
STG5123DTR
JSTG5123-CD1Unsawn wafer
DFN6L
(1.2 x 1 mm)
Tape and reel
April 2012Doc ID 14102 Rev 51/22
This is information on a product in full production.
Stressing the device above the rating listed in Table 4: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in Table 5: Recommended
operating conditions of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability. Refer also to the
STMicroelectronics™ SURE program and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
I
CC
V
V
V
V
I
IKC
I
I
OK
I
I
OP
or I
P
T
STG
T
CC
IC
O
IK
O
D
L
Supply voltage–0.5 to 5.5V
DC input voltage–0.5 to V
I
CC
DC control input voltage–0.5 to 5.5V
DC output voltage–0.5 to V
DC input diode current on control pin (V
DC input diode current (V
< 0 V)±50mA
IN
< 0 V)–50mA
SEL
CC
DC output diode current±20mA
DC output current±200mA
DC output current peak
(pulse at 1 ms, 10% duty cycle)
DC VCC or ground current±100mA
GND
Power dissipation at TA = 70 °C
(1)
±400mA
1120mW
Storage temperature–65 to 150°C
Lead temperature (10 s)300°C
+0.5V
+0.5V
1. Derate above 70 °C by 18.5 mW/°C.
Table 5.Recommended operating conditions
SymbolParameterValueUnit
V
CC
V
V
IC
V
O
T
op
dt/dv
I
Supply voltage 1.65 to 4.5V
Input voltage0 to V
Control input voltage0 to 4.5V
Output voltage0 to V
Operating temperature–40 to 85°C
V
= 1.65 to 2.7 V0 to 20
Input rise and fall time
control input
CC
V
= 3.0 to 4.5 V0 to 10
CC
6/22Doc ID 14102 Rev 5
CC
CC
V
V
ns/V
Page 7
STG5123Electrical characteristics
3 Electrical characteristics
3.1 DC electrical characteristics
Table 6.DC specifications
Value
SymbolParameterV
1.65 – 1.950.65 V
2.3 – 2.51.21.2
V
High level input
IH
voltage
2.7 – 3.01.31.3
3.3 – 3.61.41.4
1.65 – 1.950.400.40
2.3 – 2.50.600.60
IL
Low level input
voltage
2.7 – 3.00.600.60
V
3.3 – 3.60.600.60
ON
Switch ONresistance
R
ON-resistance
ΔR
match between
ON
channels
(1)
(V)Test condition
CC
Min.Typ.Max.Min.Max.
CC
0.65 V
CC
4.51.61.6
4.50.800.80
1.8
2.71.31.61.8
3.01.21.51.7
V
= 0 V to V
S
IS = 100 mA
CC
2.03.03.5
4.51.01.21.4
1.8
2.70.05
3.00.05
V
at RON max
S
= 100 mA
I
S
0.06
4.50.05
1.8
1.01.51.5
UnitTA = 25 °C-40 to 85 °C
V
V
Ω
Ω
R
FLAT
I
OFF
I
I
CC
IN
ON-resistance
flatness
(2)
OFF state
leakage current
(Sn), (D)
Input leakage
current
Quiescent
supply current
2.70.450.600.70
3.00.430.500.60
= 0 V to V
V
S
IS = 100 mA
CC
4.50.390.500.60
4.3V
0 – 4.5V
1.65 – 4.5
= 0.3 or 4 V±20±100nA
S
= 0 to 4.5 V±0.1±1.0μA
SEL
V
= VCC or
SEL
GND
±0.1±1.0μA
Doc ID 14102 Rev 57/22
Ω
Page 8
Electrical characteristicsSTG5123
Table 6.DC specifications (continued)
Value
SymbolParameterV
(V)Test condition
CC
Min.Typ.Max.Min.Max.
Quiescent
I
CCLV
supply current
low voltage
driving
1. ΔRON = R
2. Flatness is defined as the difference between the maximum and minimum value of ON-resistance as measured over the
1. OFF isolation = 20 log10 (VD/VS), VD = output. VS = input to OFF switch.
6
pF
Doc ID 14102 Rev 59/22
Page 10
Test circuitsSTG5123
4 Test circuits
Figure 3.ON-resistance
)
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Figure 4.Bandwidth
3
3
3
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3
6
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10/22Doc ID 14102 Rev 5
6
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Page 11
STG5123Test circuits
Figure 5.OFF leakage
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3/&&
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6
33
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Figure 6.Channel-to-channel crosstalk
6
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Doc ID 14102 Rev 511/22
Page 12
Test circuitsSTG5123
Figure 7.OFF isolation
6
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3
Figure 8.Test circuit
05,3%
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3
3
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2
4
1. CL = 5/35 pF or equivalent: (includes jig capacitance).
= 50 Ω or equivalent.
2. R
L
= Z
3. R
T
of pulse generator (typically 50 Ω).
OUT
12/22Doc ID 14102 Rev 5
#
2
,
,
3#6
Page 13
STG5123Test circuits
#3V
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Figure 9.Break-before-make time delay
6
##
3
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6
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#3V
Figure 10. Switching time and charge injection
(V
6
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= 0 V, R
GEN
2
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3
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= 0 Ω, RL = 1 MΩ, CL = 100 pF)
GEN
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Figure 11. Turn-on, turn-off delay time
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Doc ID 14102 Rev 513/22
T
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Page 14
Package informationSTG5123
5 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 12. DFN6L (1.2 x 1 mm) package outline
1. Drawing is not to scale.
14/22Doc ID 14102 Rev 5
7899067
Page 15
STG5123Package information
Table 9.DFN6L (1.2 x 1 mm) mechanical data
Dimensions (millimeters)
Symbol
Typ.Min.Max.
A 0.50 0.45 0.55
A1 0.02 0 0.05
A30.127
b 0.20 0.15 0.25
D 1.20 1.15 1.25
E 1 0.95 1.05
e 0.40
L 0.35 0.30 0.40
L1 0.45 0.40 0.50
Figure 13. DFN6L (1.2 x 1 mm) footprint recommendation
Doc ID 14102 Rev 515/22
Page 16
Package informationSTG5123
Figure 14. DFN6L carrier tape information
1. Measured from centreline of sprocket hole to centreline of pocket.
2. Cumulative tolerance of 10 sprocket holes is ±
3. Measured from centreline of sprocket hole to centreline of pocket.
4. Other material available.
5. Drawing is not to scale.
6. All dimensions are in millimeters unless otherwise stated.
0.20.
16/22Doc ID 14102 Rev 5
Page 17
STG5123Package information
Figure 15. DFN6L reel information drawing (back view)
!-
1. Drawing is not to scale.
2. Dimensions are in millimeters.
Doc ID 14102 Rev 517/22
Page 18
Package informationSTG5123
Figure 16. DFN6L reel information drawing (front view)
1. Drawing not to scale.
2. Dimensions are in millimeters.
18/22Doc ID 14102 Rev 5
Page 19
STG5123Die description
6 Die description
Product JSTG5123-CD1
●Wafer size: 203 mm (8 inches)
●Wafer thickness: 725 μm + 25 μm
●Die identification: V891A.
Die layout
●Design die size (X x Y): 900 x 350 μm
●Scribe line: 100 x 62 μm
●Stepping die size: 1000 x 412 μm
●Pad opening: 76 x 76 μm
●DI: die identification (at the position shown in Figure 17)
●Pads: pad contact (at the position shown in Figure 17 and Ta b le 1 0 ).
Figure 17. JSTG5123-CD1 die plot
3
$
6!
$IEIDENTIFICATION
Refer to Tab le 1 0 for the pad locations.
8 9
'.$
6
##
3
3%,
!-
Doc ID 14102 Rev 519/22
Page 20
Die descriptionSTG5123
Table 10.Pad information
Pad functionX (μm)Y(μm)
S2-292.2552
GND96.7586
S1292.2552
SEL361-52
V
CC
96.75-18
D-292.25-52
Pad locations are measured relative to the die center (where X and Y are the horizontal and
vertical axis, respectively, measured in μm). Refer to Figure 17.
20/22Doc ID 14102 Rev 5
Page 21
STG5123Revision history
7 Revision history
Table 11.Document revision history
DateRevisionChanges
30-Oct-20071Initial release.
Table 6: DC specifications on page 7: Modified values for “Input
21-Apr-20102
leakage current” and “Quiescent supply current”.
Updated ECOPACK
information.
Minor text changes throughout the document.
®
statement in Section 5: Package
08-Feb-20113
21-Dec-20114
02-Apr-20125
Corrected typo in Tab le 2, Section 2, Ta b l e 6 to Tab le 9 ,
Figure 12, updated Figure 14.
Added wafer, Section 6: Die description, updated Ta bl e 1 ,
Section 2: Electrical ratings and Disclaimer, minor text
corrections throughout document.
Added product maturity information, updated Ta ble 1 and
Section 6 (replaced RPN JTS5123-CD1 by JSTG5123-CD1),
minor text corrections throughout document.
Doc ID 14102 Rev 521/22
Page 22
STG5123
y
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