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STGF10NB60SD
N-CHANNEL 10A - 600V T O-220FP
PowerMESH™ IGBT
TYPE V
CES
V
CE(sat) (Max)
@25°C
I
C
@100°C
STGF10NB60SD 600 < 1.8 V10A
■ HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
■ LOW ON-VOLTAGE DROP
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using thelatest highvoltage t ec hnologybased o n a
patented strip layout, STMicroelectronics has
designed an advanced f amily of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized achieveminimum on-voltage drop for low
frequency applications (<1k Hz ).
APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Collector-Emitter Voltage (VGS=0)
600 V
Reverse Battery Protection 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuous) at TC=25°C
Collector Current (continuous) at TC=100°C
(●)
Collector Current (pulsed) 80 A
Total Dissipation at TC= 25°C
20 A
10 A
25 W
Derating Factor 0.2 W/°C
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(●) Pulsewidthlimitedbysafeoperatingarea
I
V
V
V
CM
P
V
CES
ECR
I
I
TOT
T
GE
C
C
ISO
stg
T
j
1/8June 2003
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STGF10NB60SD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Break-down
IC= 250 µA, VGE= 0, 600 V
Voltage
V
BR(CES)
Emitter Collector Break-down
=1mA,VGE=0, 20 V
I
C
Voltage
I
CES
I
GES
Collector cut-off Current
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating ,Tj=25 °C
CE
V
= Max Rating ,Tj=125 °C
CE
V
=±20V,VCE= 0 ± 100 nA
GE
100µAµA
10
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage VCE=VGE,IC= 250µA 2.5 5 V
Collector-Emitter Saturation
Voltage
VGE=15V, IC= 5 A, Tj= 25°C
V
=15V, IC= 10 A, Tj= 25°C
GE
VGE=15V, IC= 10 A, Tj= 125°C
1.15
1.35
1.25
1.8
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
I
CL
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge VCE= 400V, IC=10A,
Latching Current V
=25V,IC=10 A
CE
= 25V, f = 1 MHz, VGE=0
V
CE
=15V
V
GE
= 480V, RG= 1kΩ,
clamp
Tj= 125°C
5S
610
65
12
33 nC
20 A
V
V
V
pF
pF
pF
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STGF10NB60SD
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
t
(di/dt)
Eon
r
Turn-on Delay Time
Rise Time 0.46 µs
Turn-on Current Slope
on
Turn-on Switching Losses
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(V
E
t
r(Voff
E
t
c
off
t
f
(**)
off
t
c
t
f
(**)
off
Cross-over Time
)
Off Voltage Rise Time 1.2 µs
Fall Time 1.2 µs
Turn-off Switching Loss 5.0 mJ
Cross-over Time
)
Off Voltage Rise Time 1.2 µs
Fall Time 1.9 µs
Turn-off Switching Loss 8.0 mJ
=480V,IC=10A
CC
RG=1KΩ,VGE=15V
VCC= 480 V, IC=10A
RG=1KΩ,VGE=15V
V
= 480 V, IC=10A,
clamp
RGE=1KΩ,VGE=15V
V
= 480 V, IC=10A,
clamp
R
=1KΩ,VGE=15V
GE
Tj = 125 °C
0.7 µs
8
0.6
2.2 µs
3.8 µs
A/µs
mJ
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
f
t
rr
Q
rr
I
rrm
(●)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Switching Off Safe Operating Area
Forward Current
Forward Current pulsed
Forward On-Voltage If= 3.5 A
If= 3.5 A, Tj = 125 °C
=7A,VR=20V,
Reverse Recovery Time
Reverse Recovery Charge
I
f
Tj =125°C, di/dt = 100A/µs
Reverse Recovery Current
Thermal Impedance
1.4
1.15
50
70
2.7
7
56
1.9
A
A
V
V
ns
nC
A
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STGF10NB60SD
Output Characteristics
Transconductance
Transfer Characteristics
Collector-Emitter On Voltagevs Temperature
Collector-Emitter On Voltage vs Collector Current
4/8
Gate Threshold Voltage vs Temperature
Page 5
STGF10NB60SD
Capacitance Variations
Off Losses vs Gate Resistance Off Losses vs Collector Current
Gate Charge vs Gate-Emitter Vo ltage
Normalized Break-down Voltage vs Temp.
Off Losses vs Temperature
5/8
Page 6
STGF10NB60SD
Emitter-Collector Diode Characteristics
Fig. 2: Test Circuit For Inductive Lo ad SwitchingFig. 1: Gate Charge test Circuit
6/8
Page 7
TO-220FP MECHANICAL DATA
STGF10NB60SD
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L5
L4
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STGF10NB60SD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© The ST logo is a registered trademark of STMicroelectronics
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