ST STGB3NB60SD User Manual
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STGB3NB60SD
N-CHANNEL 3A - 600V D2PAK
Power MESH™ IGBT
TYPE
V
CES
V
CE(sat)
I
c
STGB3NB60SD 600 V <1.5 V 3 A
■ HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
■ VERY LOW ON-VOLTAGE DROP (V
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ INTEGRATED FREEWHEELING DIODE
■ SURFACE-MOUNTING D
2
PAK (TO-263)
cesat
)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed
an advanced fa mily o f IGB Ts, the PowerMESH™ IGB Ts,
with outstanding pe rfomances . The suffix “S” identifi es a
family optimized to a chiev e minim um on -volta ge drop for
low frequency applications (<1kHz).
APPLICATIONS
■ GAS DISCHARGE LAMP
■ STATIC RELAYS
■ MOTOR CONTROL
3
1
D2PAK
TO-263
(suffix“T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
GE
I
C
I
C
(•) Collector Current (pulsed) 25 A
I
CM
P
tot
T
stg
T
j
(•)Pulse w id th limited by s afe operating area.
Collector-Emitter Voltage (VGS = 0) 600 V
Gate-Emitter Voltag e ± 20 V
Collector Current (continuos) at Tc=25°C 6 A
Collector Current (continuos)at Tc=100°C 3 A
Total Dissipation at Tc = 25°C 70 W
Derating Factor 0.46 W/°C
Storage Temperature –60 to 175 °C
Max. Operating Junction Temperature 175 °C
1/8November 2000
STGB3NB60SD
THERMA L D ATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case Max 2.14 °C/W
Thermal Resistance Junction-ambient Max 62.5 °C/W
Thermal Resistance Case-sink Typ 0.5 °C/W
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter
ID = 250 µA VGE = 0 600
Breakdown Voltage
Collector cut-off (VGE = 0) VCE = Max Rating Tj = 25 °C
V
= Max Rating Tj = 125 °C
CE
Gate-body Leakage
Current (V
DS
= 0)
V
= ± 20V VCE = 0
GS
10
100
±100 nA
ON
(*)
I
CES
I
GSS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
= VGE I
CE
= 15 V IC = 1.5 A
V
GE
= 15 V IC = 3 A
V
GE
V
= 15 V ID = 3 A Tj = 125 °C
GE
= 250 µA
C
2.5 5 V
1
1.2
1.5
1.1
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
C
ies
C
oes
C
res
Forward Transconductance VCE = 25 V IC = 3 A 1.7 2.5 S
Input Capacitance VCE = 25V f = 1 MHz VGE = 0 255 330 pF
Output Capacitance 30 40 pF
Reverse Transfer Capacitanc-
5.6 7 pF
es
V
µA
µA
V
V
V
Q
G
Q
GE
Q
GC
I
CL
Total Gate Charge VCE=480V IC=3 A VGE=15 V 18 nC
Gate-Emitter Charge 5.4 nC
Gate-Collector Charge 5.5 nC
Latching Current V
= 480 V RG = 1 K
clamp
T
=150 °C
j
12 A
Ω
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
125
150
50
1100
2/8
t
d(on)
t
(di/dt)
E
on
DelayTime
r
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
VCC = 480 V IC = 3 A
= 15 V RG = 1 k
V
GE
VCC = 480 V IC = 3 A
= 15 V RG = 1 k
V
GE
T
=125 °C
j
Ω
Ω
ns
ns
A/µs
J
µ
STGB3NB60SD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 480 V IC = 3 A
V
CC
= 1 k
R
GE
V
CC
R
GE
T
j
Ω
= 480 V IC = 3 A
= 1 k
Ω
= 125 °C
VGE = 15 V
VGE = 15 V
tr(
t
d(Voff
E
off(**
tr(
t
d(Voff
E
off(**
t
c
Voff
t
f
t
c
Voff
t
f
Cross-Over Time
)
Off Voltage Rise Time
)
Delay Time
Fall Time
)
Turn-off Switching Loss
Cross-Over Time
)
Off Voltage Rise Time
)
Delay Time
Fall Time
)
Turn-off Switching Loss
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
t
rr
Q
rr
I
rrm
(•)Pulse width li m i ted by max. junction temperature
(*)Pulsed: Pulse dur ation = 300 µs, duty cycle 1. 5 %.
(∗∗)Losses I nclude Also T he Tail (Jedec St andardization)
Forward Current
Forward Current pulsed
Forward On-Voltage
f
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 3 A
I
f
= 1 A
I
f
If = 3 A VR = 200 V
di/dt = 100 A/µs T
= 125 °C
j
1.8
1.0
3.4
0.72
1.15
2.8
1.45
3.6
1.2
1.8
1.55
1.15
1700
4500
9.5
3
25
1.9 V
µ
µ
µ
µ
mJ
µ
µ
µ
µ
mJ
A
A
V
ns
nC
A
s
s
s
s
s
s
s
s
Thermal Impedance
3/8
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