Siemens SFH608-2, SFH608-3, SFH608-4, SFH608-5 Datasheet
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SFH 608
PHOTOTRANSISTOR, 5.3 KV, TRIOS
LOW CURRENT
OPTOCOUPLER
FEATURES
• Very High CTR at IF=1 mA, V
CE
=0.5 V
- SFH608-2, 63-125%
- SFH608-3, 100-200%
- SFH608-4, 160-320%
- SFH608-5, 250-500%
• Specified Minimum CTR at I
V
=1.5 V: ≥ 32% (typ. 120%)
CE
=0.5 mA,
F
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• High Collector-Emitter V oltage V
• Isolation T est V oltage: 5300 VA C
CEO
RMS
=55 V
• Low Current Input
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler in 6 Pin DIP
Package
• Field Effect Stable: TRIOS*
V
DE
• VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
• Applications
- Telecommunications
- Industrial Controls
- Office Machines
- Microprocessor System Interfaces
DESCRIPTION
The SFH 608 is an optocoupler designed for high
current transfer ratio at low input currents with the
output transistor saturated. This makes the device
ideal for low current switching applications. The
SFH608 is packaged in a six pin plastic DIP.
*TRIOS
— TR ansparent IO n S hield
Dimensions in inches (mm)
Pin One ID
12
5
6
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
Anode
Cathode
NC
1
2
3
.300 (7.62)
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
typ.
6
Base
5
Collector
4
Emitter
.110 (2.79
.150 (3.81
248 (6.30)
256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
3
4
.335 (8.50)
.343 (8.70)
Maximum Ratings (T
=25 ° C)
A
Emitter
Reverse Voltage...................................................................................6 V
DC Forward Current........................................................................50 mA
Surge Forward Current (tp ≤
10 µ s) ................................................... 2.5 A
Total Power Dissipation................................................................. 70 mW
Detector
Collector-Emitter Voltage .................................................................. 55 V
Collector-Base Voltage.......................................................................55 V
Emitter-Base Voltage ..........................................................................7 V
Collector Current............................................................................ 50 mA
Surge Collector Current (tp ≤
1 ms)................................................100 mA
Total Power Dissipation............................................................... 150 mW
Isolation Test V oltage (between emitter and detector, refer
to climate DIN 40046 part 2 Nov. 74) (t=1 sec.)..............5300 VAC
RMS
Creepage .................................................................................................≥ 7 mm
Clearance .................................................................................................≥
7 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1...................................................175
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
=25 ° C .........................................................................≥ 10
A
=100 ° C .......................................................................≥ 10
A
12
11
Ω
Ω
Storage Temperature Range .......................................... -55 ° C to +150 ° C
Operating Temperature Range....................................... -55 °
C to +100 ° C
Junction Temperature......................................................................100 °
C
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane ≥
1.5 mm).............................................260 ° C
5–1
C
Characteristics (T
=25 ° C, unless otherwise specified)
A
Emitter
Forward Voltage V
Reverse Voltage V
Reverse Current I
Capacitance C
Thermal Resistance R
Detector
Voltage, Collector-Emitter V
Voltage, Emitter-Base V
Capacitance C
Capacitance C
Capacitance C
Thermal Resistance R
Package
Coupling Capacitance C
Coupling Transfer Ratio
SFH 608-2
SFH 608-3
SFH 608-4
SFH 608-5
Saturation Voltage,
Collector-Emitter
SFH 608-2
SFH 608-3
SFH 608-4
SFH 608-5
Leakage Current,
Collector-Emitter I
Symbol Typ Unit Condition
R
I
C
I
C
I
C
I
C
V
V
V
V
CEO
F
R
O
thJA
CEO
BEO
CE
CB
EB
thJA
C
/I
F
/I
F
/I
F
/I
F
CEsat
CEsat
CEsat
CEsat
1.1 ( ≤ 1.5) V I
( ≥ 6) V I
0.01 ( ≤ 10) µ AV
25 pF V
1070 K/W
55 V I
≥
7VI
≥
10 pF V
16 pF V
10 pF V
500 K/W
0.60 pF
63-125
75 ( ≥ 32)
100-200
120 ( ≥ 50)
160-320
200 ( ≥ 80)
250-500
300 ( ≥ 125)
0.25 ( ≤ 0.4)
0.25 ( ≤ 0.4)
0.25 ( ≤ 0.4)
0.25 ( ≤ 0.4)
%
%
%
%
%
%
%
%
V
V
V
V
10 ( ≤ 200) nA V
=5 mA
F
= 10 µ A
R
=6 V
R
=0 V, f=1 MHz
R
=10 µ A
CE
=10
µ A
EB
=5 V, f=1 MHz
CE
=5 V, f=1 MHz
CE
=5 V, f=1 MHz
CE
I
=1 mA, V
F
I
=0.5 mA, V
F
I
=1 mA, V
F
I
=0.5 mA, V
F
I
=1 mA, V
F
I
=0.5 mA, V
F
I
=1 mA, V
F
I
=0.5 mA, V
F
I
=0.32 mA, I
C
I
= 0.5 mA, I
C
I
= 0.8 mA, I
C
I
=1.25 mA, I
C
=10 V
CE
CE
CE
CE
CE
CE
CE
CE
CE
F
F
=0.5 V
=1.5 V
=0.5 V
=1.5 V
=0.5 V
=1.5 V
=0.5 V
=1.5 V
=1 mA
F
=1 mA
=1 mA
=1 mA
F
Figure 2. Switching times TA=25°C,
I
=1 mA, VCC=5 V, tON, tR, t
F
, tF, =f(RL)
OFF
Figure 3. Current transfer ratio (typ.)
=0.5 V, CTR=f(TA, IF)
V
CE
Figure 1. Schematic
I
F
R
L
47Ω
I
=2 mA (to adjust by I
C
Description Symbol Values Unit
Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t
ON
R
OFF
F
F
), R
=100 Ω , T
L
=25 ° C, V
A
CC
=5 V
8 µs
5 µs
7.5 µs
7 µs
Figure 4. Current transfer ratio (typ.)
=1.5 V, CTR=f(TA, IF)
V
CE
V
C
I
C
5–2
SFH608
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