Siemens SFH601 Datasheet

)
)

.
.

SFH601 SERIES

TRIOS* PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

• High Current Transfer Ratios
SFH601-1, 40 to 80%
SFH601-2, 63 to 125%
SFH601-3 ,100 to 200%
SFH601-4, 160 to 320%

• Isolation Test Voltage (1 Sec.), 5300 VAC

RMS

• VCEsat 0.25 (≤0.4) V, IF=10 mA, IC=2.5 mA

• Built to conform to VDE Requirements

• Highest Quality Premium Device

• Long Term Stability

• Storage Temperature, –55∞ to +150∞C

• Underwriters Lab File #E52744

• CECC Approved

V

• VDE 0884 Available with Option 1

DE

DESCRIPTION

The SFH601 is an optocoupler with a Gallium Ars­enide LED emitter which is optically coupled with a
silicon planar phototransistor detector. The compo-

Dimensions in inches (mm)

3

248 (6.30)
256 (6.50)

4

5

.335 (8.50)
.343 (8.70)

.039

(1.00)

Min.

4°

typ.

.018 (0.45)
.022 (0.55)

Pin One ID

12

6

.130 (3.30)
.150 (3.81)

.020 (.051) min.

.031 (0.80)
.035 (0.90)

.100 (2.54) typ.

Anode

Cathode

NC

1

2

3

.300 (7.62)

18° typ.

.010 (.25)
.014 (.35)

.300 (7.62)
.347 (8.82)

typ.

6

Base

5

Collector

4

Emitter

.110 (2.79
.150 (3.81

nent is packeged in a plastic plug-in case 20 AB
DIN 41866.

The coupler transmits signals between two electri­cally isolated circuits.

Maximum Ratings
Emitter

Reverse Voltage................................................. 6 V

DC Forward Current......................................60 mA

Surge Forward Current (t

=10 µs).................. 2.5 A

p

Total Power Dissipation.............................. 100 mW

Detector

Collector-Emitter Voltage.............................. 100 V

Emitter-Base Voltage ......................................... 7 V

Collector Current...........................................50 mA

Collector Current (t=1 ms)..........................100 mA

Power Dissipation...................................... 150 mW

Package

Isolation Test V oltage (between emitter and

detector referred to climate DIN 40046,

part 2, Nov. 74) (t=1 sec.)..............5300 VAC

Creepage
Clearance

........................................................... ≥

.......................................................... ≥

7 mm
7 mm

Isolation Thickness between Emitter and

Detector

Comparative Tracking Index per

DIN IEC 112/VDE0303, part 1........................175

Isolation Resistance

V
VIO=500 V, TA=100°C

.......................................................≥

=500 V, TA=25°C

IO

................................... ≥

................................. ≥

0.4 mm

12

10

11

10

Characteristics

RMS

Ω

*TRIOS

Ω

(TA=25°C)

Emitter

Forward Voltage V

Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance R

Detector

Capacitance
Collector-Emitter
Collector-Base
Emitter-Base

Thermal Resistance R

Package

Saturation Voltage,
Collector-Emitter V

Coupling Capacitance C

—TRansparent IOn Shield

Symbol Unit Condition

F

BR

R

O

THJamb

C

CE

C

CB

C

EB

THJamb

CEsat

IO

1.25
(≤1.65)

6VI

≥

0.01 (≤10)
25 pF VF=0 V, f=1 MHz
750

6.8

8.5
11

500

0.25 (≤0.4) V IF=10 mA,

0.6 pF V

VI

µ

AV

°

C/W

pF f=1 MHz

°

C/W

=60 mA

F

=10 µA

R

=6 V

R

VCE=5 V
VCB=5 V
VEB=5 V

IC=2.5 mA

=0, f=1 MHz

I-O

Storage Temperature Range........–55°C to +150°C

Ambient Temperature Range....... –55

Junction Temperature....................................100

°

C to +100°C

°

C

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane

≥

1.5 mm) ..........260°C

5–1

This document was created with FrameMaker 4.0.4

Current Transfer Ratio and Collector-Emitter Leakage Current

V

V

by dash number

-0 -1 -2 -3 Unit

IC/IF at VCE=5 V
(IF=10 mA) 40-80 63-

125

IC/IF at VCE=5 V
(IF=1 mA) 30

(>13)

45
(>22)

Collector-Emitter
Leakage Current
(VCE=10 V)
(I

)

CEO

2 (≤

50)

2 (≤

50)

100­200

70
(>34)

5 (≤

100)

160­320

90
(>56)

5 (≤

100)

%

%

nA

Figure 3. Current transfer ratio ver­sus diode current

(T

=–25°C, VCE=5 V) IC/IF=f (IF)

A

Figure 1. Linear operation

I

F

(without saturation)

RL=75 Ω

I

C

47 Ω

I

=10 mA, VCC=5 V, TA=25 °C, Typical

F

Load Resistance R
Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t
Cut-off Frequency F

L

ON

R

OFF

f

CO

Figure 2. Switching operation

I

F

47 Ω

1 KΩ

V

=5

CC

75

3.0

2.0

2.3

2.0
250 kHz

(with saturation)

=5

V

CC

Figure 4. Current transfer ratio ver­sus diode current (T

I

=f (IF)

C/IF

Ω
µ

s

µ

s

µ

s

µ

s

=0°C, VCE=5 V)

A

Figure 5. Current transfer ratio ver­sus diode current (T

V)I

=f (IF)

C/IF

=25°C, VCE=5

A

Typical

Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t

ON

R

OFF

F

V

SAT

CE-

-1
(I

=20 mA)

F

-2 and -3
(IF=10 mA)-4(IF=5 mA)

3.0 4.2 6.0

2.0 3.0 4.6
18 23 25
11 14 15

0.25 (≤0.4) V

5–2

µ

s

µ

s

µ

s

µ

s

SFH601