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SFH601 SERIES
TRIOS* PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• High Current Transfer Ratios
SFH601-1, 40 to 80%
SFH601-2, 63 to 125%
SFH601-3 ,100 to 200%
SFH601-4, 160 to 320%
• Isolation Test Voltage (1 Sec.), 5300 VAC
RMS
• VCEsat 0.25 (≤0.4) V, IF=10 mA, IC=2.5 mA
• Built to conform to VDE Requirements
• Highest Quality Premium Device
• Long Term Stability
• Storage Temperature, –55∞ to +150∞C
• Underwriters Lab File #E52744
• CECC Approved
V
• VDE 0884 Available with Option 1
DE
DESCRIPTION
The SFH601 is an optocoupler with a Gallium Arsenide LED emitter which is optically coupled with a
silicon planar phototransistor detector. The compo-
Dimensions in inches (mm)
3
248 (6.30)
256 (6.50)
4
5
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Pin One ID
12
6
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
Anode
Cathode
NC
1
2
3
.300 (7.62)
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
typ.
6
Base
5
Collector
4
Emitter
.110 (2.79
.150 (3.81
nent is packeged in a plastic plug-in case 20 AB
DIN 41866.
The coupler transmits signals between two electrically isolated circuits.
Maximum Ratings
Emitter
Reverse Voltage................................................. 6 V
DC Forward Current......................................60 mA
Surge Forward Current (t
=10 µs).................. 2.5 A
p
Total Power Dissipation.............................. 100 mW
Detector
Collector-Emitter Voltage.............................. 100 V
Emitter-Base Voltage ......................................... 7 V
Collector Current...........................................50 mA
Collector Current (t=1 ms)..........................100 mA
Power Dissipation...................................... 150 mW
Package
Isolation Test V oltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1 sec.)..............5300 VAC
Creepage
Clearance
........................................................... ≥
.......................................................... ≥
7 mm
7 mm
Isolation Thickness between Emitter and
Detector
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1........................175
Isolation Resistance
V
VIO=500 V, TA=100°C
.......................................................≥
=500 V, TA=25°C
IO
................................... ≥
................................. ≥
0.4 mm
12
10
11
10
Characteristics
RMS
Ω
*TRIOS
Ω
(TA=25°C)
Emitter
Forward Voltage V
Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance R
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
Thermal Resistance R
Package
Saturation Voltage,
Collector-Emitter V
Coupling Capacitance C
—TRansparent IOn Shield
Symbol Unit Condition
F
BR
R
O
THJamb
C
CE
C
CB
C
EB
THJamb
CEsat
IO
1.25
(≤1.65)
6VI
≥
0.01 (≤10)
25 pF VF=0 V, f=1 MHz
750
6.8
8.5
11
500
0.25 (≤0.4) V IF=10 mA,
0.6 pF V
VI
µ
AV
°
C/W
pF f=1 MHz
°
C/W
=60 mA
F
=10 µA
R
=6 V
R
VCE=5 V
VCB=5 V
VEB=5 V
IC=2.5 mA
=0, f=1 MHz
I-O
Storage Temperature Range........–55°C to +150°C
Ambient Temperature Range....... –55
Junction Temperature....................................100
°
C to +100°C
°
C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm) ..........260°C
5–1
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Current Transfer Ratio and Collector-Emitter Leakage Current
by dash number
-0 -1 -2 -3 Unit
IC/IF at VCE=5 V
(IF=10 mA) 40-80 63-
125
IC/IF at VCE=5 V
(IF=1 mA) 30
(>13)
45
(>22)
Collector-Emitter
Leakage Current
(VCE=10 V)
(I
)
CEO
2 (≤
50)
2 (≤
50)
100200
70
(>34)
5 (≤
100)
160320
90
(>56)
5 (≤
100)
%
%
nA
Figure 3. Current transfer ratio versus diode current
(T
=–25°C, VCE=5 V) IC/IF=f (IF)
A
Figure 1. Linear operation
I
F
(without saturation)
RL=75 Ω
I
C
47 Ω
I
=10 mA, VCC=5 V, TA=25 °C, Typical
F
Load Resistance R
Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t
Cut-off Frequency F
L
ON
R
OFF
f
CO
Figure 2. Switching operation
I
F
47 Ω
1 KΩ
V
=5
CC
75
3.0
2.0
2.3
2.0
250 kHz
(with saturation)
=5
V
CC
Figure 4. Current transfer ratio versus diode current (T
I
=f (IF)
C/IF
Ω
µ
s
µ
s
µ
s
µ
s
=0°C, VCE=5 V)
A
Figure 5. Current transfer ratio versus diode current (T
V)I
=f (IF)
C/IF
=25°C, VCE=5
A
Typical
Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t
ON
R
OFF
F
V
SAT
CE-
-1
(I
=20 mA)
F
-2 and -3
(IF=10 mA)-4(IF=5 mA)
3.0 4.2 6.0
2.0 3.0 4.6
18 23 25
11 14 15
0.25 (≤0.4) V
5–2
µ
s
µ
s
µ
s
µ
s
SFH601