Siemens SFH600 Datasheet

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SFH600 SERIES

TRIOS* PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

• High Current Transfer Ratios
SFH600-0, 40 to 80%
SFH600-1, 63 to 125%
SFH600-2, 100 to 200%
SFH600-3, 160 to 320%

Dimensions in inches (mm)

3

248 (6.30)
256 (6.50)

12

Pin One ID

Anode

Cathode

1

2

6

Base

5

Collector

• Isolation Test Voltage (1 Sec.), 5300 VACRMS

• VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA

• High Quality Premium Device

• Long Term Stability

• Storage Temperature, –55∞ to +150∞C

• Underwriters Lab File #E52744

V

• VDE 0884 Available with Option 1

DE

DESCRIPTION

The SFH600 is an optocoupler with a GaAs LED
emitter which is optically coupled with a silicon pla­nar phototransistor detector. The component is
packaged in a plastic plug-in case, 20 AB DIN

41866.

The coupler transmits signals between two electri-

.039

(1.00)

.018 (0.45)
.022 (0.55)

Min.

typ.

4

5

6

.335 (8.50)
.343 (8.70)

.130 (3.30)
.150 (3.81)

4°

.020 (.051) min.

.031 (0.80)
.035 (0.90)

.100 (2.54) typ.

NC

3

.300 (7.62)

18° typ.

.010 (.25)
.014 (.35)

.300 (7.62)
.347 (8.82)

typ.

4

Emitter

.110 (2.79
.150 (3.81

cally isolated circuits. The potential difference
between the circuits to be coupled is not allowed to

Characteristics

exceed the maximum permissible insulating volt­age.

Maximum Ratings
Emitter

Reverse Voltage................................................. 6 V

DC Forward Current......................................60 mA

Surge Forward Current (t

=10 µs).................. 2.5 A

p

Total Power Dissipation.............................. 100 mW

Detector

Collector-Emitter Voltage................................ 70 V

Emitter

Forward Voltage V
Breakdown Voltage V
Reverse Current I
Capacitance C
Thermal Resistance R

Emitter-Base Voltage ....................................... 7 V

Collector Current...........................................50 mA

Collector Current (t=1 ms)..........................100 mA

Power Dissipation...................................... 150 mW

Package

Isolation Test V oltage (between emitter and

detector referred to climate DIN 40046,

part 2, Nov. 74) (t=1 sec.)..............5300 VAC

RMS

Creepage......................................................≥7 mm

Clearance

.......................................................... ≥

7 mm
Isolation Thickness between Emitter &

Detector.....................................................

Comparative Tracking Index per

DIN IEC 112/VDE0303, part 1........................175

≥

0.4 mm

Detector

Capacitance
Collector-Emitter
Collector-Base
Emitter-Base

Thermal Resistance R

Package

Saturation Voltage,
Collector-Emitter V

Coupling Capacitance C

(T

A

=25°C)

Symbol Unit Condition

F

BR

R

O

THJamb

C

CE

C

CB

C

EB

THJamb

CEsat

IO

1.25 (≤1.65) V IF=60 mA
6VI

≥

0.01 (≤10)

25 pF VF=0 V, f=1 MHz
750

5.2

6.5

9.5

500

0.25 (≤0.4) V

0.6 pF VIO=0, f=1 MHz

µ

AV

°

C/W

pF f=1 MHz

°

C/W

=10 µA

R

=6 V

R

VCE=5 V
VCB=5 V
VEB=5 V

IF=10 mA,
IC=2.5 mA

Isolation Resistance

V

=500 V, TA=25°C

IO

VIO=500 V, TA=100°C

...................................≥

.................................≥

1012
1011

Ω
Ω

*TRIOS

—TRansparent IOn Shield

Storage Temperature Range........–55°C to +150°C

Ambient Temperature Range....... –55

Junction Temperature....................................100

°

C to +100°C

°

C

Soldering Temperature (max. 10 s, dip

soldering: distance to seating plane

1.5 mm)....................................................260°C

≥

5–1

This document was created with FrameMaker 4.0.4

Current Transfer Ratio and Collector-Emitter Leakage Current

V

V

by dash number

-0 -1 -2 -3 Unit

IC/IF at VCE=5 V
(IF=10 mA) 40-80 63-

125

IC/IF at VCE=5 V
(IF=1 mA) 30

(>13)

45
(>22)

Collector-Emitter
Leakage Current
(VCE=10 V)
(I

)

CEO

2 (≤

35)

2 (≤

35)

100­200

70
(>34)

2 (≤

35)

160­320

90
(>56)

5 (≤

70)

%

%

nA

Figure 3. Current transfer ratio versus
diode current

(T

=–25°C, V

A

=5 V) IC/IF=f (IF)

CE

Figure 1. Linear operation

I

F

(without saturation)

RL=75 Ω

I

C

47 Ω

IF=10 mA, VCC=5 V, TA=25 °C, Typical

Load Resistance R
Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t
Cut-off Frequency F

Figure 2. Switching operation

I

F

L

ON

R

OFF

f

CO

(with saturation)

1 KΩ

V

=5

CC

75

3.2

2.0

3.0

2.5
250 kHz

=5

V

CC

Figure 4. Current transfer ratio versus
diode current (T

I

=f (IF)

C/IF

Ω
µ

s

µ

s

µ

s

µ

s

=0°C, VCE=5 V)

A

47 Ω

Typical

Turn-On Time t
Rise Time t
Turn-Off Time t
Fall Time t

ON

R

OFF

F

V

CESAT

-0

(I

=20 mA)

F

-1 and -2

(IF=10 mA)-3(IF=5 mA)

3.7 4.5 5.8

2.5 3.0 4.0
19 21 24
11 12 14

0.25 (≤0.4) V

5–2

Figure 5. Current transfer ratio versus
diode current (T

I

=f (IF)

F

µ

s

µ

s

µ

s

µ

s

=25°C, VCE=5 V)IC/

A

SFH600