SGS Thomson Microelectronics LM336, LM336BZ, LM236Z, LM236D, LM236 Datasheet
...
.LOW TEMPERATURECOEFFICIENT
.WIDE OPERATING CURRENT OF 400µATO
10mA
.0.2Ω DYNAMICIMPEDANCE
.GUARANTEEDTEMPERATURE STABILITY
.FASTTURN-ON
LM236
LM336,B
2.5VVOLTAGE REFERENCES
Z
TO92
(PlasticPackage
DESC RIP TI ON
TheLM236andLM336areprecision2.5Vregulator
diodes.ThesevoltagereferencemonolithicICsoperatelike 2.5Vzenerdiodeswith alow temperature
coefficient and a dynamic impedance of 0.2Ω.A
third pin enables adjusting the reference voltage
and the temperaturecoefficient.
PI N CONNECTIONS
TO92
(Bottomview)
-
+
V
V
ADJ
ORDER CODES
Part num-
ber
LM236 –25
LM336,B 0
Temperature Range
SO8
(Topview)
+
NC
V
8765
D
SO8
(PlasticMicropackage)
Package
o
C, +85oC ••
o
C, +70oC ••
ADJ
NC
ZD
1234
NC
NC
October1997 1/9
-
V
NC
LM236 - LM336,B
SCHEMA TIC DIAGRAM
V
2kΩ
24kΩ
1.1k
Ω
24kΩ
6.6k
600Ω
6.6kΩ
Ω
30kΩ
ADJ
V
3pF 10kΩ
50kΩ
6pF
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter LM236 LM336,B Unit
Current
I
R
I
F
T
oper
T
stg
Reverse
Forward
15
10
15
10
Operating Free-air Temperature Range –25 to +85 0 to +70
Storage Temperature Range –65 to +150
mA
o
o
C
C
ELECTRICAL CHARACTERISTICS
LM236 -25
LM336,B 0
o
C ≤ T
o
C ≤ T
amb
amb
(unless otherwise specified)
Symbol Parameter
Reverse Breakdown Voltage
V
2/9
∆V
Z
K
K
R
R
D
VT
VH
= +25oC, IR= 1mA)
(T
amb
Reverse Breakdown Voltage Change with Current
amb
min.
≤ 10mA)
R
= +25oC
≤ T
amb
≤ T
max.
(400µA ≤ I
T
T
Reverse Dynamic Impedance (IR=1mA)
= +25oC
T
amb
≤ T
T
min.
amb
≤ T
max.
Temperature Stability (VR= 2.49V, IR= 1mA) 3.5 9 1.8 6 mV
Long Term Stability (T
= +25oC ±0.1oC, IR= 1mA)
amb
≤ +85oC
≤ +70oC
LM236, LM336
LM336B
LM236 LM336,B
Min. Typ. Max. Min. Typ. Max.
2.44 2.49 2.54 2.39
2.6
0.2
0.4
6
3
10
0.6
1
2.44
2.49
2.59
2.49
2.54
2.6310
0.2
0.411.4
12
20 20
Unit
V
mV
Ω
ppm
LM236 - LM336,B
3/9
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