SAMSUNG M393B2873GB0 Technical data

Rev. 1.0, Nov. 2010

http://www.BDTIC.com/SAMSUNG

240pin Registered DIMM

1.35V

based on 1Gb G-die

78FBGA with Lead-Free & Halogen-Free (RoHS compliant)

M393B2873GB0 M393B5673GB0 M393B5670GB0 M393B5173GB0 M393B5170GB0

datasheet

SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.

Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.

For updates or additional information about Samsung products, contact your nearest Samsung office.

All brand names, trademarks and registered trademarks belong to their respective owners.

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Registered DIMM

datasheet DDR3L SDRAM

Revision History

Revision No. History Draft Date Remark Editor

1.0 - First Release Nov. 2010 - S.H.Kim

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Registered DIMM

datasheet DDR3L SDRAM

Table Of Contents

240pin Registered DIMM based on 1Gb G-die

1. DDR3L Registered DIMM Ordering Information ........................................................................................................... 5

2. Key Features................................................................................................................................................................. 5

3. Address Configuration ..................................................................................................................................................5

4. Registered DIMM Pin Configurations (Front side/Back side)........................................................................................ 6

5. Pin Description ............................................................................................................................................................. 7

6. ON DIMM Thermal Sensor ........................................................................................................................................... 7

7. Input/Output Functional Description..............................................................................................................................8

8. Pinout Comparison Based On Module Type................................................................................................................. 9

9. Registering Clock Driver Specification.......................................................................................................................... 10

9.1 Timing & Capacitance values .................................................................................................................................. 10

9.2 Clock driver Characteristics..................................................................................................................................... 10

10. Function Block Diagram:.............................................................................................................................................11

10.1 1GB, 128Mx72 Module (Populated as 1 rank of x8 DDR3 SDRAMs) ................................................................... 11

10.2 2GB, 256Mx72 Module (Populated as 2 ranks of x8 DDR3 SDRAMs) ................................................................. 12

10.3 2GB, 256Mx72 Module (Populated as 1 rank of x4 DDR3 SDRAMs) ................................................................... 13

10.4 4GB, 512Mx72 Module (Populated as 2 ranks of x4 DDR3 SDRAMs) ................................................................. 14

10.5 4GB, 512Mx72 Module (Populated as 4 ranks of x8 DDR3 SDRAMs) ................................................................. 16

10.6 8GB, 1Gx72 Module (Populated as 4 ranks of x4 DDR3 SDRAMs) ..................................................................... 17

11. Absolute Maximum Ratings ........................................................................................................................................22

11.1 Absolute Maximum DC Ratings............................................................................................................................. 22

11.2 DRAM Component Operating Temperature Range .............................................................................................. 22

12. AC & DC Operating Conditions...................................................................................................................................22

12.1 Recommended DC Operating Conditions ............................................................................................................. 22

13. AC & DC Input Measurement Levels ..........................................................................................................................23

13.1 AC & DC Logic Input Levels for Single-ended Signals.......................................................................................... 23

13.2 V

13.3 AC and DC Logic Input Levels for Differential Signals .......................................................................................... 26

13.3.1. Differential Signals Definition ......................................................................................................................... 26

13.3.2. Differential Swing Requirement for Clock (CK - CK

13.3.3. Single-ended Requirements for Differential Signals ...................................................................................... 28

13.3.4. Differential Input Cross Point Voltage ............................................................................................................ 29

13.4 Slew Rate Definition for Single Ended Input Signals .............................................................................................30

13.5 Slew rate definition for Differential Input Signals ................................................................................................... 30

14. AC & DC Output Measurement Levels ....................................................................................................................... 30

14.1 Single Ended AC and DC Output Levels............................................................................................................... 30

14.2 Differential AC and DC Output Levels ................................................................................................................... 30

14.3 Single-ended Output Slew Rate ............................................................................................................................ 31

14.4 Differential Output Slew Rate ................................................................................................................................ 32

15. IDD specification definition..........................................................................................................................................33

16. IDD SPEC Table .........................................................................................................................................................35

17. Input/Output Capacitance ...........................................................................................................................................38

18. Electrical Characteristics and AC timing .....................................................................................................................39

18.1 Refresh Parameters by Device Density................................................................................................................. 39

18.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................ 39

18.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ................................................................. 39

18.3.1. Speed Bin Table Notes .................................................................................................................................. 42

19. Timing Parameters by Speed Grade ..........................................................................................................................43

19.1 Jitter Notes ............................................................................................................................................................46

19.2 Timing Parameter Notes........................................................................................................................................ 47

20. Physical Dimensions...................................................................................................................................................48

20.1 128Mbx8 based 128Mx72 Module (1 Rank) - M393B2873GB0 ............................................................................ 48

20.1.1. x72 DIMM, populated as one physical rank of x8 DDR3 SDRAMs ................................................................ 48

Tolerances.................................................................................................................................................... 25

REF

) and Strobe (DQS - DQS) ............................................. 26

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20.2 128Mbx8 based 256Mx72 Module (2 Ranks) - M393B5673GB0 .......................................................................... 49

20.2.1. x72 DIMM, populated as two physical ranks of x8 DDR3 SDRAMs .............................................................. 49

20.3 256Mbx4 based 256Mx72 Module (1 Rank) - M393B5670GB0 ............................................................................ 50

20.3.1. x72 DIMM, populated as one physical rank of x4 DDR3 SDRAMs ................................................................ 50

20.4 256Mbx4 based 512Mx72 Module (2 Ranks) - M393B5170GB0 .......................................................................... 51

20.4.1. x72 DIMM, populated as two physical ranks of x4 DDR3 SDRAMs .............................................................. 51

20.5 128Mbx8 based 512Mx72 Module (4 Ranks) - M393B5173GB0 .......................................................................... 52

20.5.1. x72 DIMM, populated as four physical ranks of x8 DDR3 SDRAMs .............................................................. 52

datasheet DDR3L SDRAM

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Registered DIMM

datasheet DDR3L SDRAM

1. DDR3L Registered DIMM Ordering Information

Part Number

M393B2873GB0-YF8/H9/K0 1GB 128Mx72 128Mx8(K4B1G0846G-HY##)*9 1 30mm

M393B5673GB0-YF8/H9/K0 2GB 256Mx72 128Mx8(K4B1G0846G-HY##)*18 2 30mm

M393B5670GB0-YF8/H9/K0 2GB 256Mx72 256Mx4(K4B1G0446G-HY##)*18 1 30mm

M393B5170GB0-YF8/H9/K0 4GB 512Mx72 256Mx4(K4B1G0446G-HY##)*36 2 30mm

M393B5173GB0-YF8/H9 4GB 512Mx72 128Mx8(K4B1G0846G-HY##)*36 4 30mm

NOTE :

1. "##" - F8/H9/K0

2. F8(1066Mbps 7-7-7) / H9(1333Mbps 9-9-9) / K0(1600Mbps 11-11-11)

- DDR3-1600(11-11-11) is backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)

- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)

2

Density Organization Component Composition

Number of

Rank

2. Key Features

Speed

tCK(min) 2.5 1.875 1.5 1.25 ns

CAS Latency 6 7 9 11 n CK

tRCD(min) 15 13.125 13.5 13.75 ns

tRP(min) 15 13.125 13.5 13.75 ns

tRAS(min) 37.5 37.5 36 35 ns

tRC(min) 52.5 50.625 49.5 48.75 ns

DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600

6-6-6 7-7-7 9-9-9 11-11- 11

Height

Unit

• JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V) Power Supply

•V

= 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)

DDQ

• 400MHz f

• 8 independent internal bank

• Programmable

• Programmable Additive Latency(Posted

• Programmable

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with st write [either On the fly using A12 or MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower then T

• Asynchronous Reset

for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin

CK

CAS Latency: 6,7,8,9,10,11

CAS) : 0, CL - 2, or CL - 1 clock

CAS Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066), 7(DDR3-1333) and 8(DDR3-1600)

arting address “000” only), 4 with tCCD = 4 which does not allow seamless read or

85°C, 3.9us at 85°C < T

CASE

≤ 95°C

3. Address Configuration

Organization Row Address Column Address Bank Address Auto Precharge

256Mx4(1Gb) based Module A0-A13 A0-A9, A11 BA0-BA2 A10/AP

128Mx8(1Gb) based Module A0-A13 A0-A9 BA0-BA2 A10/AP

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Registered DIMM

datasheet DDR3L SDRAM

4. Registered DIMM Pin Configurations (Front side/Back side)

Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back

1

2

V

REFDQ

V

121

SS

122 DQ4 43 DQS8 163

3 DQ0 123 DQ5 44

4DQ1124

5

6DQS

V

SS

125

0126

7DQS0127

8

V

SS

128 DQ6 KEY 89

9 DQ2 129 DQ7 49

10 DQ3 130

11

V

SS

131 DQ12 51

12 DQ8 132 DQ13 52 BA2 172 NC 93 DQS

13 DQ9 133

14

15 DQS

V

SS

134

1135

16 DQS1 136

17

V

SS

137 DQ14 57

18 DQ10 138 DQ15 58 A5 178 A6 99 DQ48 219 DQ53

19 DQ11 139

20

V

SS

140 DQ20 60

21 DQ16 141 DQ21 61 A2 181 A1 102 DQS

22 DQ17 142

23

24 DQS

V

SS

143

2144

25 DQS2 145

26

V

SS

146 DQ22 66

27 DQ18 147 DQ23 67

28 DQ19 148

29

V

SS

149 DQ28 69

30 DQ24 150 DQ29 70 A10/AP 190 BA1 111 DQS

31 DQ25 151

32

33 DQS

V

SS

152

3153

34 DQS3 154

35

V

SS

155 DQ30 75

36 DQ26 156 DQ31 76 S1,NC 196 A13 117 SA0 237 SA1

37 DQ27 157

38

V

SS

158 CB4,NC 78

39 CB0,NC 159 CB5,NC 79 S2,NC 199

40 CB1,NC 160

41

V

SS

161

NOTE : NC = No internal Connection

V

SS

V

SS

DM0,DQS9

,TDQS9

NC,DQS

9

,TDQS

V

SS

V

SS

V

SS

DM1,DQS10

,TDQS10

NC,DQS

10

,TDQS

V

SS

V

SS

V

SS

DM2,DQS11

,TDQS11

NC,DQS

11

,TDQS

11

V

SS

V

SS

V

SS

DM3,DQS12

,TDQS12

NC,DQS

12

,TDQS

V

SS

V

SS

V

SS

DM8,DQS17 TDQS17,NC

42 DQS8162

V

SS

164 CB6,NC 84 DQS4 204

45 CB2,NC 165 CB7,NC 85 DQS4 205

46 CB3,NC 166

47

48

V

SS

, NC

V

TT

V

, NC

TT

167 NC(TEST) 87 DQ34 207 DQ39

168 RESET

169 CKE1, NC 90 DQ40 210 DQ45

50 CKE0 170

V

DD

171 NC 92

53 Err_Out/NC 173

54

V

DD

174 A12/BC 95

55 A11 175 A9 96 DQ42 216 DQ47

56 A7 176

V

DD

177 A8 98

59 A4 179

V

DD

62

V

DD

180 A3 101

182

63 NC, CK1 183

64 NC, CK

65

1 184 CK0 105 DQ50 225 DQ55

V

REFCA

DD

185 CK0 106 DQ51 226

186

187 EVENT,NC 108 DQ56 228 DQ61

68 NC/Par_In 188 A0 109 DQ57 229

V

DD

189

71 BA0 191

72

73 WE

V

DD

192 RAS 11 3

193 S0 114 DQ58 234 DQ63

74 CAS 194

V

DD

195 ODT0 116

77 ODT1,NC 197

V

DD

80

V

SS

198 S3,NC 119 SA2 239

200 DQ36

81 DQ32 201 DQ37

SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.

NC,DQS

,TDQS

V

SS

V

SS

V

DD

V

DD

V

DD

V

DD

V

DD

V

DD

V

DD

V

DD

V

DD

V

DD

V

DD

V

SS

17

82 DQ33 202

83

86

V

SS

V

SS

203

206 DQ38

DM4,DQS13

88 DQ35 208

V

SS

209 DQ44

91 DQ41 211

V

SS

212

DM5,DQS14

5 213

94 DQS5 214

V

SS

215 DQ46

97 DQ43 217

V

SS

218 DQ52

100 DQ49 220

V

SS

221

DM6,DQS15

6 222

103 DQS6 223

104

107

110

V

SS

V

SS

V

SS

7 231

224 DQ54

227 DQ60

230

DM7/DQS16

DM7,DQS

112 DQS7 232

V

SS

233 DQ62

115 DQ59 235

V

SS

236

118 SCL 238 SDA

120

V

TT

240

V

SS

,TDQS13

NC,DQS

,TDQS

V

SS

V

SS

V

SS

,TDQS14

NC,DQS

,TDQS

V

SS

V

SS

V

SS

,TDQS15

NC,DQS

,TDQS

V

SS

V

SS

V

SS

TDQS16

,TDQS

V

SS

V

SS

V

DDSPD

V

SS

V

TT

13

14

15

16

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Registered DIMM

datasheet DDR3L SDRAM

5. Pin Description

Pin Name Description Number Pin Name Description Number

CK0 Clock Input, positive line 1 ODT[1:0] On Die Termination Inputs 2

CK0

CKE[1:0] Clock Enables 2 CB[7:0] Data check bits Input/Output 8

RAS

CAS

WE

[3:0] Chip Selects 4

S

A[9:0],A11,

A[15:13]

A10/AP Address Input/Autoprecharge 1 EVENT

A12/BC

BA[2:0] SDRAM Bank Addresses 3 RESET

SCL Serial Presence Detect (SPD) Clock Input 1

SDA SPD Data Input/Output 1

SA[2:0] SPD Address Inputs 3

Par_In Parity bit for the Address and Control bus 1

Err_Out

NOTE : *The V

and V

DD

Clock Input, negative line 1 DQ[63:0] Data Input/Output 64

Row Address Strobe 1 DQS[8:0] Data strobes 9

Column Address Strobe 1 DQS[8:0] Data strobes, negative line 9

DM[8:0]/

Write Enable 1

Address Inputs 2\14 RFU Reserved for Future Use 2

Address Input/Burst chop 1 TEST

Parity error found on the Address and Control bus

pins are tied common to a single power-plane on these designs.

DDQ

1

DQS[17:9]

TDQS[17:9]

[17:9]

DQS

TDQS

V

DD

V

SS

V

REFDQ

V

REFCA

V

TT

V

DDSPD

Data Masks/ Data strobes, Termination data strobes

Data strobes, negative line, Termination data

[17:9]

strobes

Reserved for optional hardware temperature sensing

Memory bus test toll (Not Connected and Not Usable on DIMMs)

Register and SDRAM control pin 1

Power Supply 22

Ground 59

Reference Voltage for DQ 1

Reference Voltage for CA 1

Termination Voltage 4

SPD Power 1

Total 240

9

1

6. ON DIMM Thermal Sensor

EVENT

NOTE : 1. All Samsung RDIMM support Thermal sensor on DIMM

2. When the SPD and the thermal sensor are placed on the module, R1 is placed but R2 is not. When only the SPD is placed on the module, R2 is placed but R1 is not.

[ Table 1 ] Temperature Sensor Characteristics

Grade Range

75 < Ta < 95 - +/- 0.5 +/- 1.0

B

40 < Ta < 125 - +/- 1.0 +/- 2.0 -

-20 < Ta < 125 - +/- 2.0 +/- 3.0 -

Resolution 0.25 °C /LSB -

SCL

R1 0 Ω

WP/EVENT

SA0 SA1 SA2 R2 0 Ω

SA0 SA1 SA2

Min. Typ . Max.

SDA

Temperature Sensor Accuracy

Units NOTE

-

°C

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datasheet DDR3L SDRAM

7. Input/Output Functional Description

Symbol Type Polarity Function

CK0 Input

CK0

CKE[1:0] Input Active High

S

[3:0] Input Active Low

ODT[1:0] Input Active High On-Die Termination control signals

AS, CAS, WE Input Active Low

R

V

REFDQ

V

REFCA

BA[2:0] Input

A[15:13, 12/BC,11, 10/AP,9:0]

DQ[63:0],

CB[7:0]

DM[8:0]

DQS[17:0] I/O Positive Edge Positive line of the differential data strobe for input and output data.

DQS

[17:0] I/O Negative Edge Negative line of the differential data strobe for input and output data.

TDQS[17:9],

[17:9] OUT

TDQS

SA[2:0] IN

SDA I/O

SCL IN

EVENT

V

DDSPD

RESET

Par_In IN Parity bit for the Address and Control bus. ("1 " : Odd, "0 ": Even)

Err_Out

TEST Used by memory bus analysis tools (unused (NC) on memory DIMMs)

Input

Supply Reference voltage for DQ0-DQ63 and CB0-CB7

Supply Reference voltage for A0-A15, BA0-BA2, RAS, CAS, WE, S0, S1, CKE0, CKE1, Par_In, ODT0 and ODT1.

Input

I/O Data and Check Bit Input/Output pins

OUT (open drain)

Supply

IN

OUT (open drain)

Positive

Edge

Negative

Edge

Active Low

Positive line of the differential pair of system clock inputs that drives input to the on-DIMM Clock Driver.

Negative line of the differential pair of system clock inputs that drives the input to the on-DIMM Clock Driver.

CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers of the SDRAMs. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank)

Enables the associated SDRAM command decoder when low and disables decoder when high. When decoder is disabled, new commands are ignored and previous operations continue. These input signals also disable all outputs (except CKE and ODT) of the register(s) on the DIMM when both inputs are high. When both S[1:0] are high, all register outputs (except CKE, ODT and Chip select) remain in the previous state. For modules supporting 4 ranks, S[3:2] operate similarly to S[1:0] for a second set of register outputs.

When sampled at the positive rising edge of the clock, CAS cuted by the SDRAM.

Selects which SDRAM bank of eight is activated. BA0 - BA2 define to which bank an Active, Read, Write or Precharge command is being applied. Bank address also determines mode register is to be accessed during an MRS cycle.

Provided the row address for Active commands and the column address and Auto Precharge bit for Read/ Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA. A12 is also utilized for BL 4/8 identification for "BL on the fly" during CAS command. The address inputs also provide the op-code during Mode Register Set commands.

Active High Masks write data when high, issued concurrently with input data.

, VSS Supply Power and ground for the DDR SDRAM input buffers and core logic.

V

DD

Supply Termination Voltage for Address/Command/Control/Clock nets.

V

TT

TDQS/TDQS enable the same termination resistance function on TDQS/TDQS abled via mode register A11=0 in MR1, DM/TDQS will provide the data mask function and TDQS is not used. X4/X16 DRAMs must disable the TDQS function via mode register A11=0 in MR1

These signals are tied at the system planar to either V address range.

This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor must be connected from the SDA bus line to V

This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from the SCL bus time to V

This signal indicates that a thermal event has been detected in the thermal sensing device.The system should guarantee the electrical level requirement is met for the EVENT

Serial EEPROM positive power supply wired to a separate power pin at the connector which supports from

3.0 Volt to 3.6 Volt (nominal 3.3V) operation.

The RESET low, all register outputs will be driven low and the Clock Driver clocks to the DRAMs and register(s) will be set to low level (the Clock Driver will remain synchronized with the input clock)

Parity error detected on the Address and Control bus. A resistor may be connected from Err_Out bus line to VDD on the system planar to act as a pull up.

is applicable for X8 DRAMs only. When enabled via Mode Register A11=1 in MR1, DRAM will

on the system planar to act as a pull-up.

DDSPD

on the system planar to act as a pull-up.

DDSPD

pin is connected to the RESET pin on the register and to the RESET pin on the DRAM. When

, RAS, and WE define the operation to be exe-

that is applied to DQS/DQS. When dis-

SS

or V

to configure the serial SPD EEPROM

DDSPD

pin on TS/SPD part.

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Registered DIMM

datasheet DDR3L SDRAM

8. Pinout Comparison Based On Module Type

48, 49

120, 240

53 Err_Out

63 NC

64 NC CK1

68 Par_In Connected to the register on all RDIMMs NC Not used on RDIMMs

76 S

77 ODT1, NC

79 S

167 NC TEST input used only on bus analysis probes NC

169 CKE1

171 A15

172 A14 A14

196 A13 A13

198 S

39, 40, 45, 46, 158, 159, 164,

165

125, 134, 143, 152, 161, 203, 212, 221, 230

126, 135, 144, 153, 162, 204, 213, 222, 231

187

NOTE : NC = No internal Connection

Signal NOTE Signal NOTE

V

TT

V

TT

1 Connected to the register on all RDIMMs S1

2, NC

3, NC

CBn Used on all RDIMMs; (n = 0...7) NC, CBn

DQSn,

TDQSn

DQS

TDQS

EVENT

NC

Additional connection for Termination Voltage for Address/Command/Control/Clock nets.

Termination Voltage for Address/Command/Control/Clock nets.

Connected to the register on all RDIMMs NC Not used on UDIMMs

Not used on RDIMMs

Connected to the register on dual- and quadrank RDIMMs; NC on single-rank RDIMMs

Connected to the register on quad-rank RDIMMs, not connected on single or dual rank RDIMMs

Connected to the register on dual- and quadrank RDIMMs; NC on single-rank RDIMMs

Connected to the register on all RDIMMs

Connected to the register on quad-rank RDIMMs, not connected on single-or dual-rank RDIMMs

Connected to DQS on x4 SDRAMs, TDQS on x8 SDRAMs on RDIMMs; (n = 9...17)

n,

Connected to DQS SDRAMs on RDIMMs; (n=9...17)

n

Connected to optional thermal sensing component. NC on Modules without a thermal sensing component.

RDIMM UDIMM

NC Not used on UDIMMs

Termination Voltage for Address/Command/Control/Clock nets.

Used for 2 rank UDIMMs, not used on single-rank UDIMMs, but terminated

Used for dual-rank UDIMMs, not connected on single-rank UDIMMs

TEST input used only on bus analysis probes

Used for dual-rank UDIMMs, not connected on single-rank UDIMMs

connected to SDRAMs on UDIMMs. However, these signals are terminated on UDIMMs. A15 not routed on some RCs

Used on x72 UDIMMs, (n = 0...7); not used on x64 UDIMMs

Connected to DM on x8 DRAMs, UDM or LDM on x16 DRAMs on UDIMMs; (n = 0...8)

on x4 DRAMs, TDQS on x8

V

TT

NC NC Not used on UDIMMs

CK1

ODT1,NC

NC Not used on UDIMMs

CKE1,

NC

A15, NC Depending on device density, may not be

NC Not used on UDIMMs

DMn

NC Not used on UDIMMs

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Registered DIMM

datasheet DDR3L SDRAM

9. Registering Clock Driver Specification

9.1 Timing & Capacitance values

TC = TBD

V

= 1.35V(1.28V~1.45V)

Symbol Parameter Conditions

fclock Input Clock Frequency application frequency 300 670 MHz

t

C

IN

C

IN

C

IN

CH/tCL

t

ACT

t

SU

t

H

t

PDM

t

DIS

t

EN

(DATA)

(CLOCK)

(RST)

Pulse duration, CK, CK HIGH or LOW 0.4 -

Inputs active time4 before RESET is taken HIGH

Setup time Input valid before CK/CK 100 - ps

Hold time

Propagation delay, single-bit switching CK/CK to output 0.65 1.0 ns

output disable time(1/2-Clock pre-launch)

output disable time(3/4-Clock pre-launch) 0.25 -

output enable time(1/2-Clock pre-launch)

output enable time(3/4-Clock pre-launch) - 0.25

Data Input Capacitance 1.5 2.5

Data Input Capacitance 2 3

Reset Input Capacitance - 3

DCKE0/1 = LOW and DCS0/1

= HIGH

Input to remain Valid after CK/ CK

CK/CK

to output float

CK/CK

to output driving

DD

& 1.5V(1.425~1.575V)

Min Max

8-

175 -

0.5 -

-0.5

Units Notes

t

CK

t

CK

t

CK

t

CK

pF

9.2 Clock driver Characteristics

Symbol Parameter Conditions

(cc)

t

jit

t

jit

t

jit

t

STAB

t

fdyn

CKsk

(per)

(hper)

Qsk1

dynoff

Cycle-to-cycle period jitter 0 40 ps

Stabilization time -6us

Dynamic phase offset -50 50 ps

Clock Output skew 50 ps

Yn Clock Period jitter -40 40 ps

Half period jitter -50 50 ps

Qn Output to clock tolerance (Standard 1/2 -Clock Pre-Launch)

Output clock tolerance (3/4 Clock Pre-Launch)

Maximum re-driven dynamic clock off-set -80 80 ps

Output Inversion enabled -100 200

OUtput Inversion disabled -100 300

Output Inversion enabled -100 200

OUtput Inversion disabled -100 300

TC = TBD

= 1.35V(1.28V~1.45V)

V

DD

& 1.5V(1.425~1.575V)

Min Max

Units Notes

ps

- 10 -

Rev. 1.0

http://www.BDTIC.com/SAMSUNG

Registered DIMM

datasheet DDR3L SDRAM

10. Function Block Diagram:

10.1 1GB, 128Mx72 Module (Populated as 1 rank of x8 DDR3 SDRAMs)

RS0A

RRASA

RCASA

RWEA

PCK0A

RCLE0A

RODT0A

A[N:0]A

DQS8 DQS8

DM8/DQS17

DQS17

CB[7:0]

DQS3 DQS

DM3/DQS12

DQS

DQ[31:24]

DQS2 DQS2

DM2/DQS11

DQS11

DQ[23:16]

DQS1 DQS1

DM1/DQS10

DQS10

DQ[15:8]

DQS0 DQS0

DM0/DQS9

DQS9

DQ[7:0]

/BA[N:0]A

DQS DQS TDQS

D8

TDQS DQ[7:0]

CS

RAS

CASWECKCKCKE

DQS

3

DQS TDQS

12

Vtt

TDQS DQ[7:0]

CS

DQS DQS TDQS TDQS DQ[7:0]

CS

DQS DQS TDQS TDQS DQ[7:0]

CS

DQS DQS TDQS TDQS DQ[7:0]

CS

D3

RAS

CASWECKCKCKE

D2

RAS

CASWECKCKCKE

D1

RAS

CASWECKCKCKE

D0

RAS

CASWECKCKCKE

ZQ

ODT

ZQ

ODT

ZQ

ODT

ZQ

ODT

ZQ

ODT

A[N:0]/BA[N:0]

DQS4 DQS4

DM4/DQS13

DQS13

DQ[39:32]

DQS5 DQS

DM5/DQS14

DQS

DQ[47:40]

DQS6 DQS6

DM6/DQS15

DQS15

DQ[55:48]

DQS7 DQS7

DM7/DQS16

DQS16

DQ[63:56]

5

14

Vtt

RS0B

RRASB

RCASB

RWEB

PCK0B

RCLE0B

RODT0B

A[N:0]B

/BA[N:0]B

DQS DQS TDQS TDQS DQ[7:0]

CS

DQS DQS TDQS TDQS DQ[7:0]

CS

DQS DQS TDQS TDQS DQ[7:0]

CS

DQS DQS TDQS TDQS DQ[7:0]

CS

D4

RAS

CASWECKCKCKE

D5

RAS

CASWECKCKCKE

D6

RAS

CASWECKCKCKE

D7

RAS

CASWECKCKCKE

ZQ

ODT

ZQ

ODT

ZQ

ODT

ZQ

ODT

A[N:0]/BA[N:0]

NOTE :

1. ZQ resistors are 240Ω ± 1% For all other resistor values refer to the appropriate wiring diagram.

Thermal sensor with SPD

SCL

EVENT EVENT

V

DDSPD

V

DD

V

TT

V

REFCA

V

REFDQ

V

SS

A0

A1 A2

SA0 SA1 SA2

SDA

Serial PD

D0 - D8

S0* RS0A-> CS0 : SDRAMs D[3:0], D8 S1* BA[N:0]

A[N:0]

RAS

CAS

WE

CKE0

ODT0

PAR_IN

1:2

CK0

QERR

RST

**

RESET

*S[3:2], CKE1, ODT1, CK1 and CK1 are NC (Unused register inputs ODT1 and CKE1 have a 330 ohm resistor to ground)

RS0B-> CS0 : SDRAMs D[7:4] RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D8 RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4] RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D8 RA[N:0]B -> A[N:0] : SDRAMs D[7:4]

R E G

I S T E R

-> RAS : SDRAMs D[7:4]

RRASB

-> CAS : SDRAMs D[3:0], D8

RCASA

-> CAS : SDRAMs D[7:4]

RCASB RWEA

-> WE : SDRAMs D[3:0], D8

RWEB

-> WE : SDRAMs D[7:4] RCKE0A -> CKE0 : SDRAMs D[3:0], D8 RCKE0B -> CKE0 : SDRAMs D[7:4]

-> RAS : SDRAMs D[3:0], D8

RRASA

RODT0A -> ODT0 : SDRAMs D[3:0], D8 RODT0B -> ODT0 : SDRAMs D[7:4] PCK0A -> CK : SDRAMs D[3:0], D8 PCK0A -> CK : SDRAMs D[7:4] PCK

0A -> CK : SDRAMs D[3:0], D8 0A -> CK : SDRAMs D[7:4]

PCK Err_out

RST

** : SDRAMs D[8:0]

- 11 -

Rev. 1.0

http://www.BDTIC.com/SAMSUNG

Registered DIMM

datasheet DDR3L SDRAM

10.2 2GB, 256Mx72 Module (Populated as 2 ranks of x8 DDR3 SDRAMs)

RS0A

RRASA

RCASA

RWEA

PCK0A

RCKE0A

RODT0A

A[N:0]A

DQS8 DQS8

DM8/DQS17

DQS17

CB[7:0]

DQS3 DQS3

DM3/DQS12

DQS12

DQ[31:24]

DQS2 DQS2

DM2/DQS11

DQS11

DQ[23:16]

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

D8

RAS

CASWECKCKCKE

D3

RAS

CASWECKCKCKE

D2

RAS

CASWECKCKCKE

ODT

/BA[N:0]A

A[N:0]/BA[N:0]

RS1A

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

PCK1A

D17

RAS

CASWECKCKCKE

D12

RAS

CASWECKCKCKE

D11

RAS

CASWECKCKCKE

RCKE1A

RODT1A

ODT

A[N:0]/BA[N:0]

DQS4 DQS4

DM4/DQS13

DQS13

DQ[39:32]

DQS5 DQS5

DM5/DQS14

DQS14

DQ[47:40]

DQS6 DQS6

DM6/DQS15

DQS15

DQ[55:48]

RS0B

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

RRASB

RCASB

RWEB

PCK0B

D4

RAS

CASWECKCKCKE

D5

RAS

CASWECKCKCKE

D6

RAS

CASWECKCKCKE

PCK0B

RCKE0B

RODT0B

A[N:0]B

/BA[N:0]B

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

RS1B

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

PCK1B

D13

RAS

CASWECKCKCKE

D14

RAS

CASWECKCKCKE

RAS

CASWECKCKCKE

D15

RAS

CASWECKCKCKE

PCK1B

RCKE1B

RODT1B

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

DQS1 DQS1

DM1/DQS10

DQS10

DQ[15:8]

DQS0 DQS0

DM0/DQS9

DQS9

DQ[7:0]

V

DDSPD

V

DD

V

TT

V

REFCA

V

REFDQ

V

SS

DQS DQS TDQS

D1

TDQS DQ[7:0] ZQ

CS

RAS

CASWECKCKCKE

DQS DQS TDQS TDQS DQ[7:0] ZQ

CS

RAS

CASWECKCKCKE

Vtt

ODT

D0

ODT

Serial PD

D0 - D17

A[N:0]/BA[N:0]

EVENT EVENT

DQS DQS TDQS

D10

TDQS DQ[7:0] ZQ

CS

RAS

CASWECKCKCKE

DQS DQS TDQS

D9

TDQS DQ[7:0] ZQ

CS

RAS

CASWECKCKCKE

Thermal sensor with SPD

SCL

ODT

A0

SA0 SA1 SA2

DM7/DQS16

DQ[63:56]

A[N:0]/BA[N:0]

A1 A2

DQS7 DQS7

DQS16

NOTE :

1. Unless otherwise noted, resistor values are 15Ω ± 5%.

2. RS0 and RS1 alternate between the back and front sides of the DIMM.

3. ZQ resistors are 240Ω ± 1% . For all other resistor values refer to the appropriate wiring diagram.

4. See the wiring diagrams for all resistors associated with the command, address and control bus.

DQS DQS TDQS

D7

TDQS DQ[7:0] ZQ

CS

RAS

CASWECKCKCKE

Vtt

S0* RS0A-> CS0 : SDRAMs D[3:0], D8

S1*

BA[N:0]

A[N:0]

RAS

CAS

WE

SDA

CKE0

CKE1

ODT0

ODT1

PAR_IN

RESET

ODT

CK0

**

DQS DQS TDQS

D16

TDQS DQ[7:0] ZQ

A[N:0]/BA[N:0]

RST

1:2

R E

G

I S T E R

QERR

CS

RAS

CASWECKCKCKE

RS

0B-> CS0 : SDRAMs D[7:4] 1A-> CS1 : SDRAMs D[12:9], D17

RS RS1B-> CS1 : SDRAMs D[16:13] RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D[12:8], D17 RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4], D[16:13] RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D[12:8], D17 RA[N:0]B -> A[N:0] : SDRAMs D[7:4, D[16:13]]

RRASA RRASB RCASA RCASB RWEA RWEB RCKE0A -> CKE0 : SDRAMs D[3:0], D8 RCKE0B -> CKE0 : SDRAMs D[7:4] RCKE1A -> CKE1 : SDRAMs D[12:9], D17 RCKE1B -> CKE1 : SDRAMs D[16:13] RODT0A -> ODT0 : SDRAMs D[3:0], D8 RODT0B -> ODT0 : SDRAMs D[7:4] RODT1A -> ODT1 : SDRAMs D[12:9], D17 RODT1A -> ODT1 : SDRAMs D[16:13]

PCK0A -> CK : SDRAMs D[3:0], D8 PCK0B -> CK : SDRAMs D[7:4] PCK1A -> CK : SDRAMs D[12:9], D17 PCK1B -> CK : SDRAMs D[16:13]

PCK PCK PCK1A -> CK : SDRAMs D[12:9], D17 PCK

Err_out

RST

** : SDRAMs D[8:0]

ODT

A[N:0]/BA[N:0]

-> RAS : SDRAMs D[3:0], D[12:8], D17

-> RAS : SDRAMs D[7:4], D[16:13]

-> CAS : SDRAMs D[3:0], D[12:8], D17

-> CAS : SDRAMs D[7:4], D[16:13]

-> WE : SDRAMs D[3:0], D[12:8], D17

-> WE : SDRAMs D[7:4], D[16:13]

0A -> CK : SDRAMs D[3:0], D8 0B -> CK : SDRAMs D[7:4]

1B -> CK : SDRAMs D[16:13]

*S[3:2], CKE1, ODT1, CK1 and CK1 are NC

- 12 -

Rev. 1.0

http://www.BDTIC.com/SAMSUNG

Registered DIMM

datasheet DDR3L SDRAM

10.3 2GB, 256Mx72 Module (Populated as 1 rank of x4 DDR3 SDRAMs)

DQS8 DQS8

VSS

CB[3:0]

DQS3 DQS3

VSS

DQ[27:24]

DQS8 DQS8

VSS

DQ[19:16]

RS0A

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

A

RCASARWE

RRAS

D8

RAS

CASWECKCKCKE

D3

RAS

CASWECKCKCKE

D2

A

PCK0A

PCK0

RCKE0A

RODT0A

A[N:0]A

/BA[N:0]A

ZQ

ODT

ZQ

ODT

ZQ

DQS17 DQS17

VSS

CB[7:4]

VSS

A[N:0]/BA[N:0]

DQS17 DQS17

VSS

DQ[31:28]

VSS

A[N:0]/BA[N:0]

DQS17 DQS17

VSS

DQ[23:20]

VSS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

RAS

CASWECKCKCKE

RAS

CASWECKCKCKE

D17

D12

D11

ZQ

ODT

ZQ

ODT

ZQ

DQS8 DQS8

VSS

DQ[35:32]

VSS

A[N:0]/BA[N:0]

DQS8 DQS8

VSS

DQ[43:40]

VSS

A[N:0]/BA[N:0]

DQS8 DQS8

VSS

DQ[51:48]

VSS

RS0B

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

B

RCASBRWE

RRAS

D4

RAS

CASWECKCKCKE

D5

RAS

CASWECKCKCKE

D6

B

PCK0B

PCK0

RCKE0B

RODT0B

A[N:0]B

/BA[N:0]B

ZQ

ODT

ZQ

ODT

ZQ

DQS17 DQS17

VSS

DQ[39:36]

VSS

A[N:0]/BA[N:0]

DQS17 DQS17

VSS

DQ[47:44]

VSS

A[N:0]/BA[N:0]

DQS17 DQS17

VSS

DQ[55:52]

VSS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

RAS

CASWECKCKCKE

RAS

CASWECKCKCKE

D13

D14

D15

ZQ

ODT

ZQ

ODT

ZQ

VSS

A[N:0]/BA[N:0]

VSS

A[N:0]/BA[N:0]

VSS

CS

RAS

DQS8 DQS8

VSS

DQ[11:8]

DQS8

8

DQS

VSS

DQ[3:0]

Vtt

Thermal sensor with SPD

SCL

EVENT EVENT

DQS DQS DM DQ[3:0]

CS

RAS

DQS DQS DM DQ[3:0]

CS

RAS

A0

SA0 SA1 SA2

CASWECKCKCKE

D1

D0

A1 A2

ODT

ZQ

ODT

ZQ

ODT

A[N:0]/BA[N:0]

DQ[15:12]

VSS

SDA

DQS17 DQS17

VSS

DQS17 DQS

VSS

DQ[7:4]

V

DDSPD

V

DD

V

TT

V

REFCA

V

REFDQ

V

SS

CS

RAS

CASWECKCKCKE

DQS DQS DM

D10

DQ[3:0]

CS

RAS

CASWECKCKCKE

DQS

17

DQS DM DQ[3:0]

CS

D9

RAS

CASWECKCKCKE

NOTE :

1. Unless otherwise noted, resistor values are 15Ω ± 5%.

2. See the wiring diagrams for all resistors associated with the command, address and control bus.

3. ZQ resistors are 240Ω ± 1%. For all other resistor values refer to the appropriate wiring diagram.

ODT

A[N:0]/BA[N:0]

ZQ

ODT

A[N:0]/BA[N:0]

ZQ

ODT

A[N:0]/BA[N:0]

Serial PD

D0 - D17

DQ[59:56]

VSS

CS

RAS

CASWECKCKCKE

DQS8 DQS8

VSS

DQS DQS DM DQ[3:0]

CS

RAS

CASWECKCKCKE

Vtt

S0* RS0A-> CS0 : SDRAMs D[3:0], D[12:8], D17

S1*

BA[N:0]

A[N:0]

RAS

CAS

WE

CKE0

ODT0

CK0

PAR_IN

RESET

**

*S[3:2], CKE1, ODT1, CK1 and CK1 are NC

(Unused register inputs ODT1 and CKE1 have a 330

D7

RST

ODT

A[N:0]/BA[N:0]

1:2

R E G

I S T E R

QERR

ZQ

ODT

RST

DQS17 DQS17

VSS

DQ[63:60]

VSS

A[N:0]/BA[N:0]

RS0B-> CS0 : SDRAMs D[7:4], D[16:13]]

RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D[12:8], D17 RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4], D[16:13] RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D[12:8], D17 RA[N:0]B -> A[N:0] : SDRAMs D[7:4], D[16:13]

RRASA

-> RAS : SDRAMs D[3:0], D[12:8], D17

RRASB

-> RAS : SDRAMs D[7:4], D[16:13]

RCASA

-> CAS : SDRAMs D[3:0], D[12:8], D17

RCASB

-> CAS : SDRAMs D[7:4], D[16:13]

-> WE : SDRAMs D[3:0], D[12:8], D17

RWEA

-> WE : SDRAMs D[7:4], D[16:13]

RWEB

RCKE0A -> CKE0 : SDRAMs D[3:0], D[12:8], D17 RCKE0B -> CKE0 : SDRAMs D[7:4], D[16:13]

RODT0A -> ODT0 : SDRAMs D[3:0], D[12:8], D17 RODT0B -> ODT0 : SDRAMs D[7:4], D[16:13]

PCK0A -> CK : SDRAMs D[3:0], D[12:8], D17 PCK0B -> CK : SDRAMs D[7:4], D[16:13]

0A -> CK : SDRAMs D[3:0], D[12:8], D17

PCK

0B -> CK : SDRAMs D[7:4], D[16:13]

PCK

Err_out

** : SDRAMs D[17:0]

CS

RAS

CASWECKCKCKE

DQS DQS DM

D16

DQ[3:0]

CS

RAS

CASWECKCKCKE

Ω

resistor to ground)

ODT

ZQ

ODT

A[N:0]/BA[N:0]

VSS

A[N:0]/BA[N:0]

- 13 -

Rev. 1.0

http://www.BDTIC.com/SAMSUNG

Registered DIMM

datasheet DDR3L SDRAM

10.4 4GB, 512Mx72 Module (Populated as 2 ranks of x4 DDR3 SDRAMs)

RS0A

RRASA

RCASA

RWEA

PCK0A

RCKE0A

RODT0A

A[N:0]A

DQS17 DQS17

VSS

CB[7:4]

DQS12 DQS12

VSS

DQ[31:28]

DQS11 DQS11

VSS

DQ[23:20]

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

D17

RAS

CASWECKCKCKE

D12

RAS

CASWECKCKCKE

D11

RAS

CASWECKCKCKE

ODT

/BA[N:0]A

A[N:0]/BA[N:0]

RS1A

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

PCK1A

D35

RAS

CASWECKCKCKE

D30

RAS

CASWECKCKCKE

D29

RAS

CASWECKCKCKE

PCK1A

RCKE1A

RODT1A

ODT

DQS17 DQS17

VSS

CB[3:0]

A[N:0]/BA[N:0]

DQS12 DQS12

VSS

DQ[27:24]

A[N:0]/BA[N:0]

DQS11 DQS11

VSS

DQ[19:16]

A[N:0]/BA[N:0]

RS0A

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

RRASA

RCASA

RAS

CASWECKCKCKE

RAS

CASWECKCKCKE

RAS

CASWECKCKCKE

D8

D3

D2

RWEA

PCK0A

RCKE0A

RODT0A

A[N:0]A

ODT

/BA[N:0]A

A[N:0]/BA[N:0]

RS1A

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

PCK1A

D26

RAS

CASWECKCKCKE

D21

RAS

CASWECKCKCKE

D20

RAS

CASWECKCKCKE

PCK1A

RCKE1A

RODT1A

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

DQS10 DQS10

VSS

DQ[15:12]

DQS0 DQS0

VSS

DQ[3:0]

DQS DQS DM

D10

DQ[3:0]

CS

RAS

CASWECKCKCKE

DQS DQS DM DQ[3:0]

CS

RAS

CASWECKCKCKE

Vtt

ODT

D0

ODT

DQS DQS DM

D28

DQ[3:0]

A[N:0]/BA[N:0]

CS

DQS DQS DM DQ[3:0]

CS

RAS

CASWECKCKCKE

D18

RAS

CASWECKCKCKE

ODT

A[N:0]/BA[N:0]

DQS10 DQS10

VSS

DQ[11:8]

DQS0 DQS0

VSS

DQ[7:4]

DQS DQS DM

D1

DQ[3:0]

CS

RAS

CASWECKCKCKE

DQS DQS DM DQ[3:0]

CS

RAS

CASWECKCKCKE

Vtt

ODT

D9

ODT

DQS DQS DM

D19

DQ[3:0]

A[N:0]/BA[N:0]

CS

DQS DQS DM DQ[3:0]

CS

RAS

CASWECKCKCKE

D27

RAS

CASWECKCKCKE

ODT

A[N:0]/BA[N:0]

- 14 -

Rev. 1.0

http://www.BDTIC.com/SAMSUNG

Registered DIMM

RS0B

DQS14 DQS14

VSS

CB[47:44]

DQS4 DQS4

VSS

DQ[35:32]

DQS16 DQS16

VSS

DQ[63:60]

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

RRASB

RCASB

RWEB

PCK0B

D14

RAS

CASWECKCKCKE

D4

RAS

CASWECKCKCKE

D16

RAS

CASWECKCKCKE

datasheet DDR3L SDRAM

PCK0B

RCKE0B

RODT0B

A[N:0]B

ODT

/BA[N:0]B

A[N:0]/BA[N:0]

RS1B

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

PCK1B

D32

RAS

CASWECKCKCKE

D22

RAS

CASWECKCKCKE

D34

RAS

CASWECKCKCKE

PCK1B

RCKE1B

RODT1B

ODT

DQS13 DQS13

VSS

CB[39:36]

A[N:0]/BA[N:0]

DQS5 DQS5

VSS

DQ[43:40]

A[N:0]/BA[N:0]

DQS15 DQS15

VSS

DQ[55:52]

A[N:0]/BA[N:0]

RS0B

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

RRASB

RCASB

RWEB

PCK0B

D13

RAS

CASWECKCKCKE

D5

RAS

CASWECKCKCKE

D15

RAS

CASWECKCKCKE

PCK0B

RCKE0B

RODT0B

A[N:0]B

ODT

/BA[N:0]B

A[N:0]/BA[N:0]

RS1B

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

DQS DQS DM DQ[3:0]

CS

PCK1B

D31

RAS

CASWECKCKCKE

D23

RAS

CASWECKCKCKE

D33

RAS

CASWECKCKCKE

PCK1B

RCKE1B

RODT1B

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

ODT

A[N:0]/BA[N:0]

DQS10 DQS10

VSS

DQ[59:56]

DQS DQS DM DQ[3:0]

CS

D7

RAS

CASWECKCKCKE

ODT

DQS DQS DM

D25

DQ[3:0]

A[N:0]/BA[N:0]

CS

RAS

CASWECKCKCKE

ODT

A[N:0]/BA[N:0]

DQ[51:48]

Vtt

Integrated Thermal sensor in SPD

SCL

EVENT EVENT

A0

A1 A2

SDA

SA0 SA1 SA2

Serial PD w/ integrated Thermal sensor

V

DDSPD

DD

TT

REFCA

REFDQ

SS

Serial PD

D0 - D35

NOTE:

1. See wiring diagrams for resistor values.

2. ZQ pins of each SDRAM are connected to individual RZQ resistors (240 +/-1%)ohms...

DQS6 DQS6

VSS

DQS DQS DM DQ[3:0]

CS

D6

RAS

CASWECKCKCKE

ODT

DQS DQS DM

D24

DQ[3:0]

A[N:0]/BA[N:0]

CS

RAS

CASWECKCKCKE

ODT

A[N:0]/BA[N:0]

Vtt

RS0A -> CS0 : SDRAMs D[3:0], D[12:0], D17 RS0B -> CS0 : SDRAMs D[7:4], D[16:13]

1A -> CS1 : SDRAMs D[21:18], D[30:26], D35

RS RS

1B -> CS1 : SDRAMs D[25:22], D[34:31]

RBA[N:0]A -> BA[N:0]: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35 RBA[N:0]B -> BA[N:0]: SDRAMs D[7:4], D[16:13], D[ 25:22], D[34:31]

RA[N:0]A -> A[N:0]: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35 RA[N:0]B -> A[N:0]: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]

A -> RAS: SDRAMs D[3:0], D[12:8], D[21:17], D[30:26], D35

RRAS

B -> RAS: SDRAMs D[7:4], D[16:13], D[25:22], D[34:31]

RRAS

RCAS

A -> CAS: SDRAMs D[4:0], D8, D[13:9], D[22:18], D[31:27] B -> CAS: SDRAMs D[8:5], D[17:14], D[26:23], D[35:32]

RCAS

1:2

RWE

R E G

S T E R

Ω

RST

A -> WE: SDRAMs D[4:0], D8, D[13:9], D[22:18], D[31:27] B -> WE: SDRAMs D[8:5], D[17:14], D[26:23], D[35:32]

RWE RCKE0A -> CKE0: SDRAMs D[3:0], D[12:8], D17 RCKE0B -> CKE0: SDRAMs D[7:4], D[16:13]

I

RCKE1A -> CKE1: SDRAMs D[21:18], D[30:26], D35 RCKE1B -> CKE1: SDRAMs D[25:22], D[34:31] RODT0A -> ODT0: SDRAMs D[3:0], D[12:8], D17 RODT0B -> ODT0: SDRAMs D[7:4], D[16:13] RODT1A -> ODT1: SDRAMs D[21:18], D[30:26], D35

RODT1B -> ODT1: SDRAMs D[25:22], D[34:31] PCK0A -> CK: SDRAMs D[3:0], D[12:8], D17 PCK0B -> CK: SDRAMs D[7:4], D[16:13]

PCK1A -> CK: SDRAMs D[21:18], D[30:26], D35 PCK1B -> CK: SDRAMs D[25:22], D[34:31]

A -> CK: SDRAMs D[3:0], D[12:8], D17

PCK0 PCK0

B -> CK: SDRAMs D[7:4], D[16:13]

PCK1

A -> CK: SDRAMs D[21:18], D[30:26], D35 B -> CK: SDRAMs D[25:22], D[34:31]

PCK1

ERR_OUT

RST : SDRAMs D[35:0]

BA[N:0]

A[N:0]

RAS

CAS

WE

CKE0

CKE1

ODT0

ODT1

S0

S1

CK0

RESET

PAR_IN

120

±

3%

- 15 -

Rev. 1.0

http://www.BDTIC.com/SAMSUNG

Registered DIMM

datasheet DDR3L SDRAM

10.5 4GB, 512Mx72 Module (Populated as 4 ranks of x8 DDR3 SDRAMs)

PCK0

CS0

PCK0

WCKE0

DQS0 DQS0

DQ[7:0]

DQS1 DQS1

DQ[15:8]

DQS2 DQS2

DQ[23:16]

DQS3 DQS3

DQ[31:24]

DQS8 DQS8

CB[7:0]

WODT0

CKCSCK

CKE

CKCSCK

ODT

U0

CKE

ODT

U1

CKE

ODT

U2

CKE

ODT

U3

CKE

ODT

U4

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

Vtt

CS1

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

PCK0

CKCSCK

U9

U10

U11

U12

U13

WCKE1

CKE

VDD

ODT

CS2

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

PCK2

CKCSCK

U18

U19

U20

U21

U22

WCKE0

CKE

WODT1

ODT

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

CS3

PCK2

CKCSCK

U27

U28

U29

U30

U31

WCKE1

CKE

VDD

ODT

S0 RS0-> CS0 : SDRAMs D[8:0] S1 RS1-> CS1 : SDRAMs D[17:9]

S2 S3

BA[N:0]

A[N:0]

ODT

RAS

CAS

WE

CKE0

CKE1

ODT

ODT0

ODT1

CK0

ODT

CK0

PAR_IN

RESET

RS

2-> CS2 : SDRAMs D[26:18]

RS

3-> CS3 : SDRAMs D[35:27] WBA[N:0] -> BA[N:0]: SDRAMs D[4:0], D8, D[13:9], D[22:18], D[31:27 ] EBA[N:0] -> BA[N:0]: SDRAMs D[8:5], D[17:14], D[26:23], D[35:32]

WA[N:0] -> A[N:0]: SDRAMs D[4:0], D8, D[13:9], D[22:18], D[31:27] EA[N:0] -> A[N:0]: SDRAMs D[8:5], D[17:14], D[26:23], D[35:32]

-> RAS: SDRAMs D[4:0], D8, D[13:9], D[22:18], D[31:27]

WRAS

-> RAS: SDRAMs D[8:5], D[17:14], D[26:23], D[35:32]

ERAS

WCAS

-> CAS: SDRAMs D[4:0], D8, D[13:9], D[22:18], D[31:27]

-> CAS: SDRAMs D[8:5], D[17:14], D[26:23], D[35:32]

ECAS

1:2

WWE

-> WE: SDRAMs D[4:0], D8, D[13:9], D[22:18], D[31:27]

-> WE: SDRAMs D[8:5], D[17:14], D[26:23], D[35:32]

EWE WCKE0 -> CKE0: SDRAMs D[4:0], D[22:18] ECKE0 -> CKE0: SDRAMs D[8:5], D[26:23] WCKE1 -> CKE1: SDRAMs D[13:9], D[31:27] ECKE1 -> CKE1: SDRAMs D[17:14], D[35:32] WODT0 -> ODT0: SDRAMs D[4:0] EODT0 -> ODT0: SDRAMs D[8:5] WODT1 -> ODT1: SDRAMs D[22:18] EODT1 -> ODT1: SDRAMs D[26:23] PCK0 -> CK: SDRAMs D[4:0], D[13:9] PCK1 -> CK: SDRAMs D[8:5], D[26:23] PCK2 -> CK: SDRAMs D[22:18], D[31:27] PCK3 -> CK: SDRAMs D[17:14], D[35:32] PCK0

-> CK: SDRAMs D[4:0], D[13:9]

-> CK: SDRAMs D[8:5], D[26:23]

PCK1

-> CK: SDRAMs D[22:18], D[31:27]

PCK2 PCK3 -> CK: SDRAMs D[17:14], D[35:32]

Err_out

RST : SDRAMs D[35:0]

RST

R E G I S T E R

QERR

DQS4 DQS4

DQ[39:32]

DQS5 DQS5

DQ[47:40]

DQS6 DQS6

DQ[55:48]

DQS3 DQS3

DQ[31:24]

Thermal sensor with SPD

CS0

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

PCK1

CKCSCK

SCL

ECKE0

EODT0

CKE

ODT

U5

CKE

ODT

U6

CKE

ODT

U7

CS1

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

PCK1

CKCSCK

U14

U15

U16

ECKE1

CKE

VDD

ODT

CS2

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

PCK3

CKCSCK

U23

U24

U25

ECKE0

CKE

EODT1

ODT

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

DQS DQS

DQ[7:0] ZQ

CS3

PCK3

CKCSCK

U32

U33

U34

ECKE1

CKE

VDD

ODT

EVENT EVENT

A0

A1 A2

SA0 SA1 SA2

V

DDSPD

V

DD

V

TT

V

REFCA

V

REFDQ

V

SS

NOTE :

1. Unless otherwise noted, resistor values are 15Ω ± 5%.

2. See the wiring diagrams for all resistors associated with the command, address and control bus.

3. ZQ resistors are 240Ω ± 1%. For all other resistor values refer to

SDA

Serial PD

D0 - D35

the appropriate wiring diagram.

CKCSCK

CKE

DQS DQS

DQ[7:0] ZQ

ODT

U8

Vtt

DQS DQS

DQ[7:0] ZQ

CKCSCK

U17

CKE

ODT

DQS DQS

DQ[7:0] ZQ

CKCSCK

U26

CKE

ODT

DQS DQS

DQ[7:0] ZQ

CKCSCK

U35

CKE

ODT

- 16 -