ROHM EMD2, UMD2N, IMD2A Technical data

EMD2 / UMD2N / IMD2A

Transistors

General purpose
(dual digital transistors)

EMD2 / UMD2N / IMD2A

zFeatures zDimensions (Unit : mm)

1) Both the DTA124E chip and DTC124E chip in a EMT
or UMT or SMT package .

2) Mounting possible with EMT6 or UMT6 or SMT6
automatic mounting machines.

3) Transistor elements are independent, eliminating

interference.

4) Mounting cost and area can be cut in half.

zStructure

Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)

The following characteristics apply to both the DT r

2, however, the “−” sign on DTr2 values for the PNP

DTr

1 and

type have been omitted.

zEquivalent circuit

EMD2 / UMD2N IMD2A

1=22kΩ

R

2=22kΩ

R

DTr2

(3) (2) (1)

R

1

R2

DTr1

R2

R1

(4) (5) (6)

DTr2

(4) (5) (6)

R1

R2

DTr1

R2

R1

(3) (2) (1)

R

1=22kΩ

R2=22kΩ

zAbsolute maximum ratings (Ta = 25°C)

IN

Limits

50 V
40

−10
30

100
150 (TOTAL)
300 (TOTAL)

Unit

V

mA

mW

1

∗

2

∗

Parameter Symbol

Supply voltage

Input voltage

Output current

Power
dissipation

Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

EMD2, UMD2N
IMD2A

C (Max.)

I

Tstg −55 to +150 ˚C

V

CC

V

O

I

Pd

Tj 150 ˚C

EMD2

ROHM : EMT6

UMD2N

(6) (5)(4)

(1) (2)(3)

ROHM : UMT6
EIAJ : SC-88

IMD2A

(4) (5) (6)

(3) (2) (1)

ROHM : SMT6
EIAJ : SC-74

(6) (5) (4)

(1) (2) (3)

Each lead has same dimensions

Abbreviated symbol : D2

Each lead has same dimensions

Abbreviated symbol : D2

Each lead has same dimensions

Abbreviated symbol : D2

Rev.C 1/3

EMD2 / UMD2N / IMD2A

Transistors

zElectrical characteristics (T a = 25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

zPackaging specifications

Package

Type

Code TR T108
Basic ordering

unit (pieces)
EMD2
UMD2N
IMD2A

zElectrical characteristic curves

DTr1 (N PN)

100

50

20

(V)

I (on)

10

Ta=−40˚C

5

2
1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

25˚C

100˚C

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

O

(A)

VO=0.2V

V
V

V

I

O (off)

G

f

R

R2/R

8000

I (off)

I (on)

O (on)

I

I

I

T

1

T2R

1

Typ. Max. Unit Conditions

Min.

−

3

−

−

−

56

− 250 − V

15.4

0.8

0.1

22

0.5

−

−

−

0.3
mA

0.36

−

−

0.5

−

−

MHz

28.6

1

1.2

CC

V

V

O

=

V

O

=

I
V

I

=

CC

V
V

O

CE

10mA, I

5V

=

=

V

µA

−

kΩ

−−

Taping

3000 3000

10m

VCC=5V

5m
2m

Ta=100˚C

1m

25˚C

500µ

−40˚C
200µ
100µ

50µ
20µ

10µ

OUTPUT CURRENT : Io (A)

5µ
2µ

1µ

0 3.0

0.5 1.0 1.5 2.0 2.5

INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage

(OFF characteristics)

I (off)

(V)

=

5V, I

O

=

100µA

0.2V, I

O

=5

I

=

0.5mA

=

50V, V

I

=

5V, I

O

=

5mA

10V, I

E

=

−5mA, f=100MHz

1k

500

I

200
100

50

20
10

5

DC CURRENT GAIN : G

2
1

mA

0V

∗

−

VO=5V

Ta=100˚C

25˚C

−40˚C

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

OUTPUT CURRENT : I

Fig.3 DC current gain vs. output

current

O

(A)

Rev.C 2/3