Panasonic UNR2223, UNR2222, UNR2221, UNR2224 Datasheet

Transistors with built-in Resistor

2.8

+0.2
–0.3

1.5

+0.25
–0.05

0.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

B

C

R1

R2

E

UN2221/2222/2223/2224

Silicon NPN epitaxial planer transistor

For digital circuits

Features

■

●

Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.

Resistance by Part Number

■

●

UN2221 9A 2.2kΩ 2.2kΩ

●

UN2222 9B 4.7kΩ 4.7kΩ

●

UN2223 9C 10kΩ 10kΩ

●

UN2224 9D 2.2kΩ 10kΩ

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T

Electrical Characteristics (Ta=25˚C)

■

Collector cutoff current

Emitter
cutoff
current

Collector to base voltage V
Collector to emitter voltage V

Forward
current
transfer
ratio

Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level V
Transition frequency f

Input
resis­tance

Resistance ratio

Marking Symbol (R1)(R

CBO

V

CEO

C

T

j

stg

–55 to +150 ˚C

)

2

50 V

50 V
500 mA
200 mW
150 ˚C

1:Base
2:Emitter EIAJ:SC-59
3:Collector Mini Type Package

Internal Connection

Parameter Symbol Conditions min typ max Unit

I
I

CBO

CEO

VCB = 50V, IE = 0 1 µA

VCE = 50V, IB = 0 1 µA
UN2221 5
UN2222 I

EBO

VEB = 6V, IC = 0 2 mA
UN2223/2224 1

CBO

CEO

IC = 10µA, IE = 0 50 V

IC = 2mA, IB = 0 50 V
UN2221 40
UN2222 h

FE

VCE = 10V, IC = 100mA 50
UN2223/2224 60

CE(sat)IC

OH

OL

UN2221/2224 2.2
UN2222 R
UN2223 10

UN2224 0.22

T

1

R1/R

= 100mA, IB = 5mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 500Ω 4.9 V
VCC = 5V, VB = 3.5V, RL = 500Ω 0.2 V
VCB = 10V, IE = –50mA, f = 200MHz

200 MHz

(–30%) 4.7 (+30%) kΩ

0.8 1.0 1.2

2

Unit: mm

1

Transistors with built-in Resistor

Common characteristics chart

— Ta

P

T

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

0 16020 60 100 14040 12080

Ambient temperature Ta (˚C

Characteristics charts of UN2221

)

UN2221/2222/2223/2224

— V

I

C

300

IB=1.0mA

250

)
mA

(

200

C

150

100

Collector current I

50

0

012210486

Collector to emitter voltage VCE (V

Cob — V

24

)
pF

(

20

ob

16

12

CE

CB

Ta=25˚C

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

f=1MHz

=0

I

E

Ta=25˚C

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

)

–25˚C

0.01
13

10 30 100 300 1000

Collector current IC (mA

IO — V

10000

3000

)

1000

µA

(

O

300

100

25˚C

C

IC/IB=10

Ta=75˚C

400

FE

300

200

100

Forward current transfer ratio h

0

13

)

IN

VO=5V
Ta=25˚C

100

30

)

10

V

(

IN

3

1

hFE — I

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

10 30 100 300 1000

Collector current IC (mA

VIN — I

O

VO=0.2V
Ta=25˚C

)

8

4

Collector output capacitance C

0

0.1 0.3

1 3 10 30 100

Collector to base voltage VCB (V

2

30

10

Output current I

3

1

0.4

)

Input voltage VIN (V

1.41.21.00.80.6

)

0.3

Input voltage V

0.1

0.03

0.01

0.1 0.3

Output current IO (mA

1 3 10 30 100

)