NEC Electronics Inc UPA831TF-T1, UPA831TF, UPA831TC Datasheet

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

μPA831TC

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION

The μPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to

UHF band.

FEATURES

•Low noise

Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA

•High gain

Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA

•Flat-lead 6-pin thin-type ultra super minimold package

•2 different built-in transistors (2SC5006, 2SC5007)

BUILT-IN TRANSISTORS

			Q1		Q2
3-pin ultra super minimold part No.			2SC5006		2SC5007
ORDERING INFORMATION
Part Number	Package		Quantity			Supplying Form
μPA831TC	Flat-lead 6-pin	Loose products			8 mm wide embossed tape.
	thin-type ultra		(50 pcs)		Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation
	super minimold				side of the tape.
μPA831TC-T1		Taping products
			(3 kp/reel)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

μPA831TC.)

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14554EJ1V0DS00 (1st edition)

Date Published November 1999 N CP(K)

Printed in Japan	©	1999

						μPA831TC
	ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
	Parameter	Symbol		Ratings			Unit
			Q1		Q2
	Collector to Base Voltage	VCBO	20		20		V
	Collector to Emitter Voltage	VCEO	12		10		V
	Emitter to Base Voltage	VEBO	3		1.5		V
	Collector Current	IC	100		65		mA
	Total Power Dissipation	PTNote	200 in 1 element		200 in 1 element		mW
				230 in 2 elements
	Junction Temperature	Tj	150		150		°C
	Storage Temperature	Tstg		−65 to +150			°C

Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.

ELECTRICAL CHARACTERISTICS (TA = +25°C)

(1) Q1

Parameter	Symbol		Conditions	MIN.	TYP.	MAX.	Unit
Collector Cutoff Current	ICBO	VCB = 10 V, IE = 0		−	−	1.0	μA
Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0		−	−	1.0	μA
DC Current Gain	hFE	VCE = 3 V, IC = 7 mANote 1		70	−	140
Gain Bandwidth Product	fT	VCE = 3	V, IC = 7 mA, f = 1 GHz	3.0	4.5	−	GHz
Feedback Capacitance	Cre	VCB = 3	V, IE = 0, f = 1 MHzNote 2	−	0.7	1.5	pF
Insertion Power Gain	|S21e|2	VCE = 3	V, IC = 7 mA, f = 1 GHz	7.0	9.0	−	dB
Noise Figure	NF	VCE = 3	V, IC = 7 mA, f = 1 GHz	−	1.2	2.5	dB

Notes 1. Pulse Measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.

2	Data Sheet P14554EJ1V0DS00

μPA831TC

(2) Q2

Parameter	Symbol		Conditions	MIN.	TYP.	MAX.	Unit
Collector Cutoff Current	ICBO	VCB = 10 V, IE = 0		−	−	0.8	μA
Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0		−	−	0.8	μA
DC Current Gain	hFE	VCE = 3 V, IC = 7 mANote 1		70	−	150
Gain Bandwidth Product	fT	VCE = 3	V, IC = 7 mA, f = 1 GHz	4.5	7.0	−	GHz
Feedback Capacitance	Cre	VCB = 3	V, IE = 0, f = 1 MHzNote 2	−	−	0.9	pF
Insertion Power Gain	|S21e|2	VCE = 3	V, IC = 7 mA, f = 1 GHz	10.0	12.0	−	dB
Noise Figure	NF	VCE = 3	V, IC = 7 mA, f = 1 GHz	−	1.4	2.7	dB

Notes 1. Pulse Measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank	FB
Marking	24
hFE Value of Q1	70 to 140
hFE Value of Q2	70 to 150

Data Sheet P14554EJ1V0DS00

3

TYPICAL CHARACTERISTICS (TA = +25°C)

Q1

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

(mW)	230	2 Elements in total	Free Air
	200
PT
Dissipation		Per Element
	100
Total Power
	0	50	100	150
	0
		Ambient Temperature TA (°C)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

	20
IC (mA)		VCE = 3 V
CurrentCollector	10
	0

	0															0.5																	1.0
							Base to Emitter Voltage VBE (V)
				COLLECTOR CURRENT vs.
				COLLECTOR TO EMITTER VOLTAGE
	20
	18
(mA)	16																							IB = 160						μ	A
	14																							IB = 140						μ	A
IC
	12
Current																								IB = 120						μ	A
	10
																								IB = 100 μA
Collector	8
																								IB = 80 μ A
	4
	6
																								IB = 60 μ A
	2																							IB = 40 μ A
																								IB = 20 μ A
	0
				1							2					3					4		5										6
	0
					Collector to Emitter Voltage																			VCE (V)

μPA831TC

Q2

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

(mW)	230	2 Elements in total	Free Air
	200
PT
Dissipation		Per Element
	100
Total Power
	0	50	100	150
	0
		Ambient Temperature TA (°C)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

	20
IC (mA)		VCE = 3 V
CurrentCollector	10
	0

	0															0.5														1.0
							Base to Emitter Voltage VBE (V)
				COLLECTOR CURRENT vs.
				COLLECTOR TO EMITTER VOLTAGE
	25
(mA)IC	20
																								IB = 140 μA
																								IB = 160						μA
Current	15
																								IB = 100 μA
																								IB = 120						μA
Collector	10
	5																							IB = 80 μ A
																								IB = 60					μ		A
																								IB = 40					μ		A
	0																							IB = 20					μ		A
				1							2					3					4		5							6
	0
					Collector to Emitter Voltage																		VCE (V)

4	Data Sheet P14554EJ1V0DS00

Q1

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000
																							VCE = 3 V
hFE
Gain
DC Current	100
	10
				1															10													100
	0.1
							Collector Current													IC (mA)
				GAIN BANDWIDTH PRODUCT vs.
				COLLECTOR CURRENT
	7.00
(GHz)fT			VCE =		3 V
	6.00		f = 1 GHz
Product	5.00
	4.00
Bandwidth
	3.00
Gain	2.00
	1.00
	0.00
				10																												100
	1
							Collector Current													IC (mA)
					INSERTION POWER GAIN vs.
					COLLECTOR CURRENT
	14.00
(dB)			VCE = 3 V
	12.00		f = 1 GHz
S21eï2
	10.00
ï
Gain	8.00
Power
	6.00
Insertion	4.00
	2.00
				10																												100
	1
							Collector Current													IC (mA)

μPA831TC

Q2

DC CURRENT GAIN vs.

COLLECTOR CURRENT

1 000
														VCE = 3 V
hFE
Gain	100
DC Current
	10
				1									10
	0.1
					Collector Current								IC (mA)
				GAIN BANDWIDTH PRODUCT vs.
				COLLECTOR CURRENT
	8.00
			VCE = 3 V
fT (GHz)	7.00		f = 1 GHz
	6.00
Product	5.00
Bandwidth	4.00
	2.00
Gain	3.00
	1.00
	0.00
				10									100
	1
					Collector Current								IC (mA)
					INSERTION POWER GAIN vs.
					COLLECTOR CURRENT
	16.00
(dB)			VCE = 3 V
	14.00		f = 1 GHz
ï2
S21e	12.00
ï
Gain	10.00
Power	8.00
Insertion	6.00
	4.00
	2.00
				10									100
	1
					Collector Current								IC (mA)

Data Sheet P14554EJ1V0DS00

5