NEC UPA1802GR-9JG Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PA1802
µµµµ
DESCRIPTION
The µPA1802 is a switching device which can be driven directly by a 2.5-V power source. The µPA1802 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
Can be driven by a 2.5-V power source
Low on-state resistance
DS(on)1
R
= 23 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
DS(on)2
R
= 25 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A)
DS(on)3
R
= 32 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1802GR-9JG Power TSSOP8
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (pulse) Total Power Dissipation
Note1
Note2
Channel Temperature T Storage Temperature T
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
T
85
14
3.15 ±0.15
3.0 ±0.1
0.65
0.27
20 V
±12 V
±7.0 A
±28 A
2.0 W
150 °C
–55 to +150 °C
PACKAGE DRAWING (Unit : mm)
+0.03 –0.08
1, 5, 8 :Drain 2, 3, 6, 7:Source 4 :Gate
0.8 MAX.
0.10 M
±0.055
0.145
1.2 MAX.
1.0±0.05
3°
0.1±0.05
6.4 ±0.2
4.4 ±0.1
+5° –3°
EQUIVALENT CIRCUIT
Drain
Gate
Gate Protection Diode
Source
Body Diode
0.25
0.5
+0.15
0.6
–0.1
1.0 ±0.2
0.1
Notes 1.
Remark
PW ≤ 10 µs, Duty Cycle ≤ 1 %
2.
Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D12966EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan
The mark
••••
shows major revised points.
©
1997, 2000
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1802
Zero Gate Voltage Drain Current I Gate Leakage Current I Gate Cut-off Voltage V
••••
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 3.5 A516S
••••
Drain to Source On-state Resi stance R
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t Total Gate Charge Q Gate to Source Charge Q Gate to Drain Charge Q Diode Forward Voltage V
DSS
GSS
GS(off)VDS
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D)IF
VDS = 20 V, VGS = 0 V10 VGS = ±12 V, VDS = 0 V±10
A
µ
A
µ
= 10 V, ID = 1 mA 0.5 0.8 1.5 V
= 4.5 V, ID = 3.5 A1623m = 4.0V, ID = 3.5 A1725m = 2.5 V, ID = 3.5 A2132m
Ω Ω Ω
VDS = 10 V 970 pF VGS = 0 V 510 pF f = 1 MHz 230 pF VDD = 10 V60ns ID = 3.5 A 210 ns
GS(on)
V
= 4.0 V 590 ns
RG = 10
820 ns VDS = 16 V13nC ID = 7.0 A3nC VGS = 4.0 V 5 nC
= 7.0 A, VGS = 0 V0.74V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
L
R
PG.
GS
V
0
τ = 1 s Duty Cycle 1 %
RG
VDD
τ
µ
V
GS
Wave Form
ID
Wave Form
VGS
ID
0
0
10 %
10 %
td(on)
90 %
ton
VGS(on)
tr
ID
td(off)
toff
90 %
90 %
10 %
t
f
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50
RL
VDD
2
Data Sheet D12966EJ1V0DS00
FORWARD BIAS SAFE OPERATING AREA
10 100
I
D
- Drain Current - A
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.01
0.1
PW
=
1 ms
100 ms
10
ms
R
DS(on)
Limited
(@V
GS
=
4.5
V)
ID(pulse)
ID(DC)
DC
TA = 25˚C Single Pulse Mounted on Ceramic Substrate of 5000 mm x 1.1 mm
2
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0
0.4
0.6
0.8
10
0.2
20
25
30
15
5
Pulsed
V
GS
= 4.5 V
4.0 V
2.5 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
10
1
0.1
0.01
0.001
0.0001
0.00001 0 0.5 21 1.5
VDS = 10 V
TA = 125˚C
75˚C
25˚C
25˚C
0.1
1100.010.001
VDS = 10 V
ID - Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.1
1
0.01
10
25
˚C
75
˚C
125
˚C
TA = 25
˚C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
••••
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
µµµµ
PA1802
0
30
60
90
TA - Ambient Temperature -
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
1.5 V
DS
= 10 V
D
= 1 mA
I
120
˚C
150
1
0.5
- Gate to Source Cut-off Voltage - V
GS(off)
0
V
50
50 1000
ch
- Channel Temperature - ˚C
T
150
Data Sheet D12966EJ1V0DS00
3
µµµµ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
10.1
10 100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
25
30
35
20
15
VGS = 2.5 V
25
˚C
25
˚C
75
˚C
T
A
= 125
˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
10.1
10 100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
20
25
15
5
VGS = 4.0 V
T
A
= 125
˚C
75
˚C
25
˚C
25
˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
10.1
10 100
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m
10
20
25
15
5
VGS = 4.5 V
T
A
= 125
˚C
75
˚C
25
˚C
25
˚C
50
20
15
10
5
25
30
35
050
100
150
R
DS (on)
- Drain to Source On-state Resistance - m
Tch - Channel Temperature - ˚C
ID = 3.5 A
V
GS
= 2.5 V
4.0 V
4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
0
10
20
30
40
50
5
10
15
R
DS (on)
- Drain to Source On-state Resistance - m
VGS - Gate to Source Voltage - V
ID = 3.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
1010.1 100
1000
10000
100
10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
VDS - Drain Source Voltage - V
f = 1 MHz V
GS
= 0 V
C
iss
C
oss
C
rss
PA1802
4
Data Sheet D12966EJ1V0DS00
µµµµ
0.001
0.0001
0.01
0.1
10
100
1
0.40.2
0.6
0.8
1
V
GS
= 0 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Source to Drain Current - A
V
F(S-D)
- Source to Drain Voltage - V
Qg - Gate Charge - nC
0
1269315
DYNAMIC INPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
ID = 7.0 A
1
2
3
4
5
VDD = 4 V
10 V
16 V
PA1802
1000
SWITCHING CHARACTERISTICS
100
, tf - Swwitchig Time - ns
(off)
, tr, td
VDD = 10 V
(on)
V
GS(on)
10
0.1
= 4.0 V
RG = 10
1
D
- Drain Current - A
I
td
10
tf
td
(off)
tr
td
(on)
100
1000
Mounted on ceramic substrate of Single Pulse
100
10
1
- Transient Thermal Resistance - ˚C/W
th(ch-A)
r
0.1
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
5000 mm
2
x 1.1 mm
0.010.001
0.1
110
PW - Pulse Width - s
Data Sheet D12966EJ1V0DS00
62.5˚C/W
1000100
5
[MEMO]
µµµµ
PA1802
6
Data Sheet D12966EJ1V0DS00
[MEMO]
µµµµ
PA1802
Data Sheet D12966EJ1V0DS00
7
µµµµ
PA1802
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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M7 98. 8
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