NEC Electronics Inc UPA1802GR-9JG Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μ PA1802

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The μPA1802 is a switching device which can be driven directly by a 2.5-V power source.

The μPA1802 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES

∙Can be driven by a 2.5-V power source

∙Low on-state resistance

RDS(on)1 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A) RDS(on)3 = 32 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)

ORDERING INFORMATION

PART NUMBER	PACKAGE
μPA1802GR-9JG	Power TSSOP8

PACKAGE DRAWING (Unit : mm)

8 5

1, 5, 8

: Drain

1.2 MAX.

2, 3, 6, 7: Source

1.0±0.05

4

: Gate

0.25

3° –3+5°°

0.5

0.1±0.05

1 4

0.6 +0.15–0.1

3.15 ±0.15
3.0 ±0.1	0.145 ±0.055
0.65	0.8 MAX.

0.27 –0.08+0.03

0.10 M

6.4 ±0.2
4.4 ±0.1	1.0 ±0.2
	0.1

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage		VDSS	20	V
Gate to Source Voltage		VGSS	±12	V
Drain Current (DC)		ID(DC)	±7.0	A
Drain Current (pulse) Note1		ID(pulse)	±28	A
Total Power Dissipation Note2		PT	2.0	W
Channel Temperature		Tch	150	°C
Storage Temperature		Tstg	–55 to +150	°C
Notes 1.	PW ≤ 10 μs, Duty Cycle ≤ 1 %
2.	Mounted on ceramic substrate of 5000 mm2 x 1.1 mm

EQUIVALENT CIRCUIT

		Drain
		Body
	Gate	Diode
	Gate
	Protection	Source
	Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No.	D12966EJ1V0DS00 (1st edition)	The mark • shows major revised points.	©		1997, 2000
Date Published	January 2000 NS CP(K)

Printed in Japan

								μ PA1802
	ELECTRICAL CHARACTERISTICS (TA = 25 °C)
	CHARACTERISTICS	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.		UNIT
	Zero Gate Voltage Drain Current	IDSS	VDS = 20 V, VGS = 0 V				10		μA
	Gate Leakage Current	IGSS	VGS = ±12 V, VDS = 0 V				±10		μA
	Gate Cut-off Voltage	VGS(off)	VDS = 10 V, ID = 1 mA		0.5	0.8	1.5		V
•
	Forward Transfer Admittance	| yfs |	VDS = 10 V, ID = 3.5 A		5	16			S
•
	Drain to Source On-state Resistance	RDS(on)1	VGS = 4.5 V, ID = 3.5 A			16	23		mΩ
		RDS(on)2	VGS = 4.0V, ID = 3.5 A			17	25		mΩ
		RDS(on)3	VGS = 2.5 V, ID = 3.5 A			21	32		mΩ
	Input Capacitance	Ciss	VDS = 10 V			970			pF
	Output Capacitance	Coss	VGS = 0 V			510			pF
	Reverse Transfer Capacitance	Crss	f = 1 MHz			230			pF
	Turn-on Delay Time	td(on)	VDD = 10 V			60			ns
	Rise Time	tr	ID = 3.5 A			210			ns
	Turn-off Delay Time	td(off)	VGS(on) = 4.0 V			590			ns
			RG = 10 Ω
	Fall Time	tf				820			ns
	Total Gate Charge	QG	VDS = 16 V			13			nC
	Gate to Source Charge	QGS	ID = 7.0 A			3			nC
	Gate to Drain Charge	QGD	VGS = 4.0 V			5			nC
	Diode Forward Voltage	VF(S-D)	IF = 7.0 A, VGS = 0 V			0.74			V
	TEST CIRCUIT 1 SWITCHING TIME			TEST CIRCUIT 2 GATE CHARGE

	D.U.T.
	RL	VGS			90 %
	VGS	10 %		VGS(on)
	Wave Form
		0
PG.	RG
	VDD
		ID	90 %		90 %
				ID
VGS					10 %
	ID	0 10 %
0
	Wave Form
τ		td(on)	tr	td(off)	tf
τ = 1 μ s			ton		toff

Duty Cycle ≤ 1 %

	D.U.T.
	IG = 2 mA	RL
PG.	50 Ω	VDD

2	Data Sheet D12966EJ1V0DS00

•TYPICAL CHARACTERISTICS (TA = 25 °C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

	100
- %	80
Factor	60
dT - Derating	40
	20
	0	60	90	120	150
	30
	TA - Ambient Temperature - ˚C

			DRAIN CURRENT vs.
			DRAIN TO SOURCE VOLTAGE
	30
		Pulsed
					VGS = 4.5 V
	25
A							4.0 V
-	20
Current
	15
						2.5		V
Drain
	10
ID -
	5
	0			0.2		0.4					0.6		0.8
			VDS - Drain to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

V	1.5
-		VDS = 10 V
Voltageoff-
		ID = 1 mA
to Source Cut	1
	0.5
Gate
-
VGS(off)	0
	−50			0		50		100		150
			Tch	- Channel Temperature - ˚C

μ PA1802

FORWARD BIAS SAFE OPERATING AREA

	100
				V)	ID(pulse)
			Limited.5				PW		=
		DS(on)		4
				=
		R	GS						1	ms
A	10	(@V		ID(DC)			10
-								ms
Current						100
							ms
	1					DC
ID - Drain
	0.1	TA = 25˚C

Single Pulse

Mounted on Ceramic

0.01Substrate of 5000 mm2 x 1.1 mm

	0.1	1			10	100
		VDS - Drain to Source Voltage - V
	FORWARD TRANSFER CHARACTERISTICS
	10
- A	1	VDS = 10 V
	0.1
Current
	0.01
					75˚C
					TA = 125˚C
Drain	0.001				25˚C
					−25˚C
ID -
	0.0001
	0.00001
	0	0.5		1	1.5	2

VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

	10	VDS = 10 V
- S
Admittance		TA = −25˚C
	1		25˚C
			75˚C
			125˚C
Transfer
yfs | - Forward	0.1
|
	0.01
	0.001		0.01	0.1	1	10
				ID - Drain Current - A

Data Sheet D12966EJ1V0DS00

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