NEC Electronics Inc UPA1800GR-9JG Datasheet

Loading...

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1800

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The PA1800 is a switching device which can be driven directly by a 4.0-V power source.

The PA1800 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES

Can be driven by a 4.0-V power source

Low on-state resistance

RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)

ORDERING INFORMATION

PART NUMBER

PACKAGE

 

 

PA1800GR-9JG

Power TSSOP8

 

 

PACKAGE DRAWING (Unit : mm)

8 5

1, 5, 8

: Drain

 

1.2 MAX.

 

 

 

 

 

 

 

2, 3, 6, 7: Source

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0±0.05

 

 

4

: Gate

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.25

 

 

 

 

 

 

 

3°

+5°

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–3°

0.5

0.1±0.05

1 4

0.6 +0.15–0.1

3.15 ±0.15

 

3.0 ±0.1

0.145 ±0.055

 

0.65

0.8 MAX.

0.27 –0.08+0.03

0.10 M

6.4 ±0.2

 

4.4 ±0.1

1.0 ±0.2

 

 

0.1

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

 

 

EQUIVALENT CIRCUIT

Drain to Source Voltage

VDSS

30

V

 

 

 

 

 

 

 

 

 

 

Gate to Source Voltage

VGSS

± 20

V

 

 

 

Drain

 

 

 

 

 

 

 

 

 

 

Drain Current (DC)

ID(DC)

± 5.0

A

 

 

 

 

 

 

 

 

 

Body

 

 

 

 

 

 

 

 

 

Drain Current (pulse) Note1

ID(pulse)

± 20

A

Gate

 

 

 

 

 

 

 

 

Diode

Total Power Dissipation Note2

PT

2.0

W

Gate

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Channel Temperature

Tch

150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Storage Temperature

Tstg

–55 to +150

°C

Protection

Source

Diode

 

 

 

 

 

 

 

 

Notes 1.

PW ≤ 10 s, Duty Cycle ≤

1 %

 

 

 

 

 

 

 

 

 

 

 

 

2.

Mounted on ceramic substrate of 50 cm2 x 1.1 mm

 

 

 

 

 

 

 

 

 

 

 

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No.

D11407EJ1V0DS00 (1st edition)

The mark shows major revised points.

©

 

1999, 2000

 

Date Published

February 2000 NS CP(K)

 

 

 

 

Printed in Japan

PA1800

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

 

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

 

 

 

10

A

 

 

 

 

 

 

 

 

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

 

 

 

±10

A

 

 

 

 

 

 

 

 

Gate Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

 

1.0

1.41

2.0

V

 

 

 

 

 

 

 

 

Forward Transfer Admittance

| yfs |

VDS = 10 V, ID = 3.0 A

 

3.0

7.0

 

S

 

 

 

 

 

 

 

 

Drain to Source On-state Resistance

RDS(on)1

VGS = 10 V, ID = 3.0 A

 

 

20

27

mΩ

 

 

 

 

 

 

 

 

 

RDS(on)2

VGS = 4.5 V, ID = 3.0 A

 

 

29

39

mΩ

 

 

 

 

 

 

 

 

 

RDS(on)3

VGS = 4.0 V, ID = 3.0 A

 

 

32

45

mΩ

 

 

 

 

 

 

 

 

Input Capacitance

Ciss

VDS = 10 V

 

 

680

 

pF

 

 

 

 

 

 

 

 

Output Capacitance

Coss

VGS = 0 V

 

 

470

 

pF

 

 

 

 

 

 

 

 

Reverse Transfer Capacitance

Crss

f = 1 MHz

 

 

170

 

pF

 

 

 

 

 

 

 

 

Turn-on Delay Time

td(on)

VDD = 15 V

 

 

18

 

ns

 

 

 

 

 

 

 

 

Rise Time

tr

ID = 3.0 A

 

 

70

 

ns

 

 

 

 

 

 

 

 

Turn-off Delay Time

td(off)

VGS(on) = 10 V

 

 

60

 

ns

 

 

RG = 10 Ω

 

 

 

 

 

Fall Time

tf

 

 

26

 

ns

 

 

 

 

 

 

 

 

Total Gate Charge

QG

VDD = 24 V

 

 

23

 

nC

 

 

 

 

 

 

 

 

Gate to Source Charge

QGS

ID = 5.0 A

 

 

2

 

nC

 

 

 

 

 

 

 

 

Gate to Drain Charge

QGD

VGS = 10 V

 

 

7

 

nC

 

 

 

 

 

 

 

 

Diode Forward Voltage

VF(S-D)

IF = 5.0 A, VGS = 0 V

 

 

0.74

 

V

 

 

 

 

 

 

 

 

Reverse Recovery Time

trr

IF = 5.0 A, VGS = 0 V

 

 

60

 

ns

 

 

di/dt = 100 A/ s

 

 

 

 

 

Reverse Recovery Charge

Qrr

 

 

80

 

nC

 

 

 

 

 

 

 

 

 

 

 

 

TEST CIRCUIT 1 SWITCHING TIME

 

 

TEST CIRCUIT 2 GATE CHARGE

 

D.U.T.

 

 

 

 

 

RL

VGS

 

 

90 %

 

VGS

10 %

 

VGS(on)

 

 

 

 

Wave Form

 

 

 

 

0

 

 

 

PG.

RG

 

 

 

VDD

 

 

 

 

 

 

ID

90 %

 

90 %

 

 

 

 

ID

VGS

 

 

 

10 %

ID

0 10 %

 

 

0

 

 

Wave Form

 

 

 

 

τ

 

td(on)

tr

td(off)

tf

 

 

τ = 1 s

 

 

ton

 

toff

 

 

 

 

Duty Cycle ≤ 1 %

 

D.U.T.

 

 

IG = 2 mA

RL

 

 

PG.

50 Ω

VDD

2

Data Sheet D11407EJ1V0DS00

NEC Electronics Inc UPA1800GR-9JG Datasheet

TYPICAL CHARACTERISTICS (TA = 25 ° C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

 

100

 

 

 

 

- %

80

 

 

 

 

 

 

 

 

 

Factor

60

 

 

 

 

 

 

 

 

 

dT - Derating

40

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

0

60

90

120

150

 

30

 

TA - Ambient Temperature - ˚C

 

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

 

20

 

 

 

 

 

 

 

Pulsed

 

 

 

 

- A

15

VGS = 4.5 V

 

 

 

 

Current

 

 

 

VGS = 4.0 V

 

 

 

 

 

 

 

ID - Drain

10

 

 

 

 

 

 

 

 

VGS = 2.5 V

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

0

 

 

 

 

 

 

0

0.2

0.4

0.6

0.8

1.0

VDS - Drain to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

- V

2.0

 

 

 

 

 

 

 

 

 

 

VDS = 10 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-off Voltage

 

ID = 1 mA

 

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

to Source Cut

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VGS(off) - Gate

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

− 50

0

50

100

150

Tch - Channel Temperature - ˚C

PA1800

FORWARD BIAS SAFE OPERATING AREA

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V)

ID(pulse)

 

PW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Limited

 

 

=

 

 

 

DS(on)

10

 

 

 

 

 

 

=

 

 

 

 

 

 

- A

10

R

GS

 

 

 

 

 

 

1

ms

(@V

 

 

ID(DC)

 

10

 

 

 

 

 

 

 

 

ms

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

ms

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

DC

 

 

 

 

 

ID - Drain

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TA = 25˚C

 

 

 

 

 

 

 

 

Single Pulse Mounted on Ceramic

0.01 Substrate of 50cm2 x 1.1 mm

0.1

1

10

100

 

VDS - Drain to Source Voltage - V

 

TRANSFER CHARACTERISTICS

 

100

VDS = 10 V

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

- A

 

 

 

 

 

 

 

Current

1

 

TA = 125˚C

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

- Drain

 

 

 

 

 

 

 

 

75˚C

 

 

 

 

0.01

 

 

 

 

 

 

ID

 

 

 

 

 

 

 

 

 

 

 

25˚C

 

 

 

 

 

 

 

 

 

0.001

 

 

 

 

− 25˚C

 

 

0.0001

0.5

 

 

2

 

 

 

0

1

1.5

2.5

3

 

 

VGS - Gate to Source Voltage - V

 

FORWARD TRANSFER ADMMITTANCE vs.

DRAIN CURRENT

 

100

 

 

 

 

 

S

VDS = 10 V

 

 

 

 

-

 

 

 

 

 

 

Admittance

10

 

TA = − 25˚C

 

 

 

 

 

 

 

 

Transfer

 

 

25˚C

 

 

 

1

 

75˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward-|yfs

 

 

125˚C

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

|

0.01

 

 

 

 

 

 

 

 

 

 

 

 

0.001

0.01

0.1

1

10

100

 

 

 

ID - Drain Current - A

 

 

Data Sheet D11407EJ1V0DS00

3

+ 5 hidden pages