DATA SHEET
Compound Field Effect Power Transistor
N-CHANNEL POWER MOS FET ARRAY
SWITCHING
INDUSTRIAL USE
µ
PA1572B
DESCRIPTION
The µPA1572B is N-channel Power MOS FET Array
that built in 4 circuits designed for solenoid, motor and
lamp driver.
FEATURES
• Full Mold Package with 4 Circuits
• 4 V driving is possible
• Low On-state Resistance
R
DS(on) = 0.6 Ω MAX. (VGS = 10 V, ID = 1 A)
DS(on) = 0.8 Ω MAX. (VGS = 4 V, ID = 1 A)
R
• Low Input Capacitance Ciss = 110 pF TYP.
ORDERING INFORMATION
Type Number Package
µ
PA1572BH 10Pin SIP
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
10
2.5
1.4
12345678910
0.6±0.1
2.54
4.0
10 MIN.
1.4
0.5±0.1
CONNECTION DIAGRAM
3
2468
110
5
79
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) VDSS 60 V
Gate to Source Voltage (V
Drain Current (DC) I
Drain Current (pulse) I
Total Power Dissipation P
Total Power Dissipation P
Channel Temperature T
Storage Tempreature T
Single Avalanche Current I
Single Avalanche Energy E
*1 PW ≤ 10 µs, Duty Cycle ≤ 1 % *2 4 Circuits TC = 25 °C
*3 4 Circuits T
A = 25 °C *4 Starting TCH = 25 °C, VDD = 30 V, VGS = 20 V → 0, RG = 25 Ω, L = 100
In case high voltage over V
Document No. G11177EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
DS = 0) VGSS (AC) ±20 V
D (DS) ±2.0 A/unit
D (pulse) *1 ±6.0 A/unit
T1 *2 20 W
T2 *3 3.0 W
CH 150 °C
stg −55 to +150°C
AS *4 5.0 A
AS *4 0.1 mJ
Build-in Gate Diodes are for protection from static electricity in handing.
GSs is applied, please append gate protection circuits.
The information in this document is subject to change without notice.
ELECTRODE CONNECTION
2, 4, 6, 8
3, 5, 7, 9
1, 10
: Gate
: Drain
: Source
µ
H
©
1996
µ
PA1572B
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Drain Leakage Current IDSS 10
Gate Leakage Current IGSS ±10
Gate Cutoff Voltage VGS (off) 1.0 2.0 V VDS = 10 V, ID = 1.0 mA
Forward Transfer Admittance
Drain to Source ON-Resistance RDS (on)1 0.3 0.6 Ω VGS = 10 V, ID = 1.0 A
Drain to Sourse ON-Resistance RDS (on)2 0.4 0.8 Ω VGS = 4.0 V, ID = 1.0 A
Input Capacitance Ciss 110 pF VDS = 10 V, VGS = 0, f = 1.0 MHz
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 25 pF
Turn-on Delay Time td (on) 30 ns ID = 1.0 A, VGS (on) = 10 V, VDD = 30 V, RL = 30 Ω
Rise Time tr 200 ns
Turn-off Delay Time td (off) 100 ns
Fall Time tf 160 ns
Total Gate Charge QG 5.4 nC VGS = 10 V, ID = 2.0 A, VDD = 48 V
Gate to Source Charge QGS 0.7 nC
Gate to Drain Charge QGD 2.0 nC
Body Diode Forward Voltage VF (S-D) 1.0 V IF = 2.0 A, VGS = 0
Reverse Recovery Time trr 130 ns IF = 2.0 A, VGS = 0, di/dt = 50 A/µs
Reverse Recovery Charge Qrr 110 nC
Yfs
0.5 S VDS = 10 V, ID = 1.0 A
µ
AVDS = 60 V, VGS = 0
µ
AVGS = ±20 V, VDS = 0
2
Test Circuit 1 Avalanche Capability
G
R
D.U.T.
= 25 Ω
µ
PA1572B
L
V
GS
= 20 V → 0
Test Circuit 2 Switching Time
PG.
V
GS
0
t
µ
t = 1 s
Duty Cycle ≤ 1 %
PG.
R
V
R
G
G
= 10 Ω
DD
D.U.T.
50 Ω
I
D
V
DD
BV
DSS
I
AS
V
DS
R
L
DD
V
Starting T
V
GS
Wave From
I
D
Wave From
CH
V
GS
V
10 %
0
10 %
t
d (on)
90 %
t
on
I
D
0
GS (on)
I
D
t
r
t
d (off)
90 %
t
off
90 %
10 %
t
r
Test Circuit 3 Gate Charge
PG.
G
= 2 mA
I
50 Ω
D.U.T.
R
L
DD
V
3
CHARACTERISTICS (TA = 25 °C)
µ
PA1572B
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3.5
3.0
2.5
2.0
4 Circuits operation
3 Circuits operation
2 Circuits operation
1.5
1.0
0.5
PT - Total Power Dissipation - W
µ
PA1572BH
0
NEC
Lead
Print
Circuit
Boad
50 100 150
1 Circuit operation
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
1.0
DS(on)
R
Limited(V
=10V)
GS
ID(Pulse)
ID(DC)
Under Same
dissipation in
each circuit
0.1ms
0.5ms
10ms
1ms
50ms
DC
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Tc is grease
Temperature
30
on back surface
20
10
PT - Total Power Dissipation - W
0
50 100 150
TC - Case Temperature - °C
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
Under Same
dissipation in
each circuit
4 Circuits operation
3 Circuits operation
2 Circuits operation
1 Circuit operation
0.1
ID - Drain Current - A
TC = 25
°C
Single Pulse
0.01
0.1
1.0 10 100
V
DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
10
T
A
=125
1.0
ID - Drain Current - A
0.1
0
°C
75
°C
25
°C
-25
°C
24
V
GS- Gate to Source Voltage - V
Pulsed
VDS=10V
ID - Drain Current - A
6
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
C - Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
8
6
VGS=20V
10V
4
2
0
1
V
DS - Drain to Source Voltage - V
VGS=4V
2
Pulsed
3
4
10 000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
µ
PA1572B
1 000
100
10
1.0
- Transient Thermal Resistance - °C/W
th(t)
r
0.1
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1 m 10 m 100 m 1 10 100 1 000
µ
10
TA=-25°C
25°C
75°C
125°C
VDS=10V
Pulsed
PW - Pulse Width - s
R
th (CH-A)
4Circuits
3Circuits
2Circuits
1Circuit
For Each Circuit,
Single Pulse
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
1.0
ID= 2 A
1 A
0.4 A
Pulsed
1.0
- Forward Transfer Admittance - S
fs
0.1
y
0.01
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
I
D
- Drain Current - A
2.0
1.0
VGS=4V
- Drain to Source On-State Resistance - Ω
DS(on)
R
0
0.1 1.0 10
I
D
- Drain Current - A
1.0 10
Pulsed
VGS=10V
0.5
- Drain to Source On-State Resistance - Ω
DS(on)
R
0
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
10
2
1
- Gate to Source Cutoff Voltage - V
0
GS(off)
V
− 50
0 50 100 150
T
CH
- Channel Temperature - °C
VDS = 10 V
I
D
= 1 mA
20
5
µ
PA1572B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.8
0.6
VGS=4V
0.4
VGS=10V
0.2
- Drain to Source On-State Resistance - Ω
DS(on)
R
1 000
0
− 50
0
T
CH
- Channel Temperature -°C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
50
100 150
VGS = 0
f = 1 MHz
100
- Capacitance - pF
rss
10
, C
oss
, C
iss
C
1.0
0.1
1 000
1 10 100
V
DS
- Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =50A/ s
GS
= 0
V
ID = 1A
C
C
C
µ
SOURCE TO DRAIN DIODE
10
FORWARD VOLTAGE
Pulsed
VGS=2V
1.0
0.1
- Diode Forward Current - A
SD
I
0
0.5
V
SD
- Source to Drain Voltage - V
VGS=0
1.0
1.5
SWITCHING CHARACTERISTICS
1 000
t
d(off)
iss
oss
rss
100
- Switching Time - ns
f
, t
10
d(off)
, t
r
, t
d(on)
t
1.0
t
f
t
r
t
d(on)
V
DD
V
GS
RG =10 Ω
=30V
=10V
0.1 1.0 10
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
ID=2A
16
14
100
- Reverse Recovery time - ns
rr
t
10
0.1 1.0 10
I
D
- Drain Current - A
6
60
VDD=12V
30V
48V
V
GS
12
10
40
20
- Drain to Source Voltage - V
DS
V
V
DS
0 2468
Q
G -
Gate Charge - nC
8
6
4
- Gate to Source Voltage - V
2
GS
V
0
µ
PA1572B
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
10
IAS=1A
1.0
0.1
VDD = 30 V
VGS = 20 V → 0
- Single Avalanche Current - A
RG = 25Ω
AS
I
Starting TCH=25°C
0.1
µµ
10
100 1 m
L - Inductive Load - H
E
AS
=0.1mJ
10 m
Energy Derating Factor - %
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
VDD = 30 V
G
= 25
80
60
40
20
0
25
Starting TCH - Starting Channel Temperature - °C
50 75 100 125 150
R
VGS = 20 V → 0
I
AS ≤
1.0A
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Semiconductor device package manual C10943X
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
Power MOS FET features and application switching power supply TEA-1034
Application circuits using Power MOS FET TEA-1035
Safe operating area of Power MOS FET TEA-1037
Ω
7
µ
P A1572B
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard :Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific :Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
Loading...