DATA SHEET
3
2
1
4
5
6
7
8
9
10
ELECTRODE CONNECTION
2, 4, 6, 8
3, 5, 7, 9
1, 10
: Gate
: Drain
: Source
Compound Field Effect Power Transistor
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The µPA1520B is N-channel Power MOS FET Array that
built in 4 circuits designed for solenoid, motor and lamp
driver.
µ
PA1520B
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
D (DC) = ±2.0 A
I
RDS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A)
DS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A)
R
• Low Input Capacitance Ciss = 220 pF TYP.
ORDERING INFORMATION
Type Number Package
µ
PA1520BH 10 Pin SIP
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS
Gate to Source Voltage VGSS
Drain Current (DC) ID
Drain Current (pulse) ID(pulse)
Total Power Dissipation PT1
Total Power Dissipation P
Channel Temperature TCH 150 °C
Storage Temperature Tstg –55 to +150 °C
Note 1
Note 2
(DC) ±2.0 A/unit
Note 3
Note 4
Note 5
T2
30 V
±20 V
±8.0 A/unit
28 W
3.5 W
10
2.5
1.4 0.6±0.1
1 1023456789
CONNECTION DIAGRAM
2.54
10 MIN.
1.4
0.5±0.1
Notes 1. V
Document No. G10598EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
GS = 0 2. VDS = 0
3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 4. 4 circuits, TC = 25 °C
3. 4 circuits, T
A = 25 °C
©
1995
µ
y Cy
PA1520B
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Leakage Current IDSS VDS = 30 V, VGS = 0 10
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Gate Cutoff Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 1.0 2.0 V
Forward Transfer Admittance | Yfs |VDS = 10 V, ID = 1.0 A 1.0 S
Drain to Source On-State Resistance
RDS(on)1 VGS = 10 V, ID = 1.0 A 0.10 0.17 Ω
RDS(on)2 VGS = 4.0 V, ID = 1.0 A 0.13 0.25 Ω
Input Capacitance Ciss VDS = 10 V, VGS = 0, f = 1.0 MHz 220 pF
Output Capacitance Coss 220 pF
Reverse Transfer Capacitance Crss 90 pF
Turn-on Delay Time td(on) ID = 1.0 A, VGS = 10 V, VDD = 15 V, 27 ns
.
.
Rise Time tr RL = 15 Ω 125 ns
Turn-off Delay Time td(off) 590 ns
Fall Time tr 500 ns
Total Gate Charge QG VGS = 10 V, ID = 2.0 A, VDD = 24 V 14 nC
Gate to Source Charge QGS 2nC
Gate to Drain Charge QGD 5.5 nC
Body Diode Forward Voltage VF(S-D) IF = 2.0 A, VGS = 0 1.0 V
Reverse Recovery Time trr IF = 2.0 A, VGS = 0, di/dt = 50 A/µs 640 ns
Reverse Recovery Charge Qrr 3.4
µ
A
µ
A
µ
C
Test Circuit 1 Switching Time
D.U.T.
R
G
RG = 10 Ω
0
V
GS
t = 1 s
Dut
PG.
t
µ
cle ≤ 1 %
Test Circuit 2 Gate Charge
D.U.T.
I
G
= 2 mA
PG.
50
Ω
V
R
L
V
Wave Form
V
DD
I
D
Wave Form
GS
GS
10 %
0
I
D
10 %
0
t
d (on)
L
R
V
DD
90 %
t
on
V
I
D
t
r
GS (on)
t
d (off)
t
90 %
off
90 %
10 %
t
f
2
CHARACTERISTICS (TA = 25 °C)
g
g
µ
PA1520B
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
6
NEC
PA1520BH
µ
5
4
Laed
Print
Circuit
Boad
4 Circuits operation
3 Circuits operation
2 Circuits operation
3
1 Circuit operation
2
1
PT - Total Power Dissipation - W
0
50 100 150
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
I
10
Limited (V
DS(on)
R
GS
= 10 V)
I
D(DC)
D(Pulse)
50 ms
1
ID - Drain Current - A
TC = 25 °C
Single Pulse
0.1
0.1
1 10 100
DS - Drain to Source Voltage - V
V
Under same
dissipation in
each circuit
PW = 1 ms
10 ms
100 ms
DC
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
4 Circuits operation
20
3 Circuits operation
2 Circuits operation
1 Circuit operation
10
TC is grease
PT - Total Power Dissipation - W
Temperature on back surface
0
50 100 150
TC - Case Temperature - °C
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
C - Case Temperature - °C
T
Under same
dissipation in
each circuit
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
DS = 10 V
V
10
1.0
TA = 125 °C
75 °C
25 °C
-25 °C
ID - Drain Current - A
0.1
0246
GS- Gate to Source Volta
V
e - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
VGS = 20 V
8
10 V
6
4
ID - Drain Current - A
2
0
0.5
DS - Drain to Source Volta
V
1.0
VGS = 4 V
1.5
Pulsed
2.0
e - V
3
1 000
100
10
1.0
rth(t) - Transient Thermal Resistance - °C/W
0.1
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single Pulse.
For each Circuit
µ
1 m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - sec
Rth(CH-A) 4Circuits
3Circuits
2Circuits
1Circuit
Rth(CH-C)
µ
PA1520B
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = -25 °C
10
25 °C
75 °C
125 °C
1.0
yfs - Forward Transfer Admittance - S
0.1
0.1
I
D- Drain Current - A
1.0
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
300
200
VGS = 4 V
VDS = 10 V
Pulsed
Pulsed
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
300
Pulsed
ID = 0.4 A
200
1 A
2 A
100
0
DS(on) - Drain to Source On-State Resistance - mΩ
R
V
GS - Gate to Source Voltage - V
10
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = 10 V
I
2
D = 1 mA
20
1
100
0
RDS(on) - Drain to Source On-State Resistance - mΩ
1.0
ID - Drain Current - A
VGS = 10 V
10
0
VGS(off) - Gate to Source Cutoff Voltage - V
- 50
0 50 100 150
T
CH - Channel Temperature - °C
4
µ
PA1520B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
150
V
100
50
0
- Drain to Source On-State Resistance - mΩ
DS(on)
R
- 50
0
T
CH
- Channel Temperature - °C
50
100 150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1 000
C
oss
C
iss
C
rss
100
- Capacitance - pF
rss
, C
oss
, C
iss
C
10
0.1
1 10 100
V
DS
- Drain to Source Voltage - V
V
GS
= 4 V
GS
=10 V
I
D
= 1 A
VGS = 0
f = 1 MHz
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
V
GS
= 10 V
1.0
0.1
- Diode Forward Current - A
SD
I
0.01
0
0.5
V
SD
- Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
t
d(off)
f
t
t
100
- Switching Time - ns
f
, t
d(off)
, t
r
, t
d(on)
t
10
0.01
r
t
d(on)
0.1 1.0 10
I
D
- Drain Current - A
Pulsed
V
GS
= 0
15 V
= 10 V
1.5
1.0
V
V
DD
GS
RG =10 Ω
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10 000
1000
- Reverse Recovery time - ns
rr
t
100
0.01
0.1 1.0 10
I
D
- Drain Current - A
di/dt = 50 A/ s
GS
= 0
V
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
20
V
DD
= 6 V
15 V
24 V
10
- Drain to Source Voltage - V
DS
V
V
DS
0
0
2 6 10 14
Q
g -
Gate Charge - nC
ID = 2 A
V
GS
12
10
8
6
4
2
- Gate to Source Voltage - V
GS
V
0
5
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual IEI-1207
Semiconductor device package manual IEI-1213
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide MF-1134
Power MOS FET features and application switching power supply TEA-1034
Application circuits using Power MOS FET TEA-1035
Safe operating area of Power MOS FET TEA-1037
µ
PA1520B
6
[MEMO]
µ
PA1520B
7
µ
PA1520B
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8
Loading...