NEC Electronics Inc UPA1520BH Datasheet

DATA SHEET

Compound Field Effect Power Transistor

μPA1520B

N-CHANNEL POWER MOS FET ARRAY

SWITCHING USE

DESCRIPTION

The μPA1520B is N-channel Power MOS FET Array that

PACKAGE DIMENSIONS

built in 4 circuits designed for solenoid, motor and lamp

in millimeters

driver.

26.8 MAX.

4.0

FEATURES

10

•

4 V driving is possible

10 MIN.

•

Large Current and Low On-state Resistance

2.5

ID (DC) = ±2.0 A

RDS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A)

2.54

1.4

RDS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A)

1.4 0.6±0.1

0.5±0.1

•

Low Input Capacitance Ciss = 220 pF TYP.

ORDERING INFORMATION

1 2 3 4 5 6 7 8 910

Type Number

Package

CONNECTION DIAGRAM

μPA1520BH

10 Pin SIP

3

5

7

9

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

2

4

6

8

Drain to Source Voltage

VDSSNote 1

30

V

Gate to Source Voltage

VGSSNote 2

±20

V

1

10

Drain Current (DC)

ID(DC)

±2.0

A/unit

Drain Current (pulse)

ID(pulse)Note 3

±8.0

A/unit

ELECTRODE CONNECTION

PT1Note 4

Total Power Dissipation

28

W

2, 4, 6, 8

: Gate

Total Power Dissipation

PT2Note 5

3.5

W

3, 5, 7, 9

: Drain

Channel Temperature

TCH

150

°C

1, 10

: Source

Storage Temperature

Tstg

–55 to +150

°C

Notes 1.

VGS = 0

2.

VDS = 0

3.

PW ≤ 10 μs, Duty Cycle ≤ 1 %

4.

4 circuits, TC = 25 °C

3.

4 circuits, TA = 25 °C

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

Document No. G10598EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan	©	1995

μPA1520B

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNIT
Drain Leakage Current	IDSS	VDS = 30 V, VGS = 0			10	μA
Gate Leakage Current	IGSS	VGS = ±20 V, VDS = 0			±10	μA
Gate Cutoff Voltage	VGS(off)	VDS = 10 V, ID = 1.0 mA	1.0		2.0	V
Forward Transfer Admittance	| Yfs |	VDS = 10 V, ID = 1.0 A	1.0			S
Drain to Source On-State Resistance	RDS(on)1	VGS = 10 V, ID = 1.0 A		0.10	0.17	Ω
	RDS(on)2	VGS = 4.0 V, ID = 1.0 A		0.13	0.25	Ω
Input Capacitance	Ciss	VDS = 10 V, VGS = 0, f = 1.0 MHz		220		pF
Output Capacitance	Coss			220		pF
Reverse Transfer Capacitance	Crss			90		pF
Turn-on Delay Time	td(on)	.		27		ns
		ID = 1.0 A, VGS = 10 V, VDD =. 15 V,
Rise Time	tr	RL = 15 Ω		125		ns
Turn-off Delay Time	td(off)			590		ns
Fall Time	tr			500		ns
Total Gate Charge	QG	VGS = 10 V, ID = 2.0 A, VDD = 24 V		14		nC
Gate to Source Charge	QGS			2		nC
Gate to Drain Charge	QGD			5.5		nC
Body Diode Forward Voltage	VF(S-D)	IF = 2.0 A, VGS = 0		1.0		V
Reverse Recovery Time	trr	IF = 2.0 A, VGS = 0, di/dt = 50 A/μs		640		ns
Reverse Recovery Charge	Qrr			3.4		μC

Test Circuit 1

Switching Time

D.U.T.

RL

VGS

VGS

VGS (on)

90 %

RG

10 %

PG.

Wave Form

0

RG = 10 Ω

VDD

VGS

ID

90 %

ID

90 %

10 %

ID

10 %

0

0

Wave Form

t

td (on)

tr

td (off)

tf

t = 1 μs

ton

toff

Duty Cycle ≤ 1 %

Test Circuit 2

Gate Charge

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

μPA1520B

CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

	6			Under same
	NEC
- W				dissipation in
	μPA1520BH	Laed
				each circuit
	5	Print	4 Circuits operation
Dissipation		Circuit
	4		3 Circuits operation
			2 Circuits operation
	3		1 Circuit operation
Power
	2
- Total
	1
PT
	0	50	100	150
	TA - Ambient Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

	100
- A	10			ID(Pulse)
Current		V)			PW
		10
					=
		=
		GS				1
		(V		50	10	ms
		Limited
				ms	ms
	DS(on)		ID(DC)
Drain
	R
	1				100
					ms
-
				DC
ID
	TC = 25 °C
	0.1 Single Pulse
	0.1		1		10		100

VDS - Drain to Source Voltage - V

FORWARD TRANSFER CHARACTERISTICS

	100			Pulsed
				VDS = 10 V
A	10
Current-
	1.0		TA = 125 °C
Drain			75	°C
			25	°C
			-25	°C
ID -	0.1
	0	2	4	6
		VGS- Gate to Source Voltage - V

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

	30			Under same
W				dissipation in
				each circuit
-			4 Circuits operation
Dissipation
	20		3 Circuits operation
			2 Circuits operation
			1 Circuit operation
Power
	10
PT - Total
		TC is grease
		Temperature on back surface
	0	50	100	150
		TC - Case Temperature - °C

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

- %	100
Power
	80
Rated
	60
of
Percentage	40
	20
dT -
	0	20	40	60	80	100	120	140	160
			TC - Case Temperature - °C

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

	10				Pulsed
	8	VGS = 20 V
- A		10 V
				VGS = 4 V
Current	6
Drain	4
ID -	2
	0	0.5	1.0	1.5	2.0

VDS - Drain to Source Voltage - V

3