NEC UPA835TF-T1, UPA835TF, UPA835TC Datasheet

DATA SHEET

NPN SILICON RF TWIN T RANSISTOR

PA835TC

µµµµ

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION

The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to

UHF band.

FEATURES

• Low noise

CE

Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, V Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

• High gain Q1 : |S Q2 : |S

• Flat-lead 6-pin thin-type ultra super minimold package

• Built-in 2 different transistors (2SC5010, 2SC5006)

2

21e

= 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA

|

2

21e

= 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

|

= 3 V, IC = 3 mA

BUILT-IN TRANSISTORS

Q1 Q2

3-pin ultra super minimold part No. 2SC5010 2SC5006

ORDERING INFORMATION

Part Number Package Quantity Supplying Form

µ

PA835TC Loose products

µ

PA835TC-T1

Remark

Flat-lead 6-pin thin-type ultra super minimold

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

PA835TC.)

µ

(50 pcs)

Taping products

(3 kp/reel)

Caution Electro-static sensitive devices

8 mm wide embossed tape. Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation side of the tape.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14555EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan

1999©

µµµµ

PA835TC

ABSOLUTE MAXIMUM RATINGS (TA = +25

Parameter Symbol

Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current I Total Power Dissipat i on

Junction Temperature T Storage Temperature T

2

Mounted on 1.08 cm

Note

× 1.0 mm glass epoxy substrate.

CBO

CEO

EBO

C

Note

T

P

j

stg

ELECTRICAL CHARACTERISTICS (TA = +25

(1) Q1

C)

°°°°

Ratings

Q1 Q2

920V 612V 23V

30 100 mA

180 in 1 element 200 in 1 element mW

230 in 2 elements

150 150

65 to +150

−

C)

°°°°

Unit

C

°

C

°

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain Bandwidth Product f Feedback Capacitance C Insertion Power Gain

CBO

EBO

FE

T

21e

S

|

VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA

Note 1

VCE = 3 V, IC = 10 mA, f = 2 GHz 10.0 12.0 VCB = 3 V, IE = 0, f = 1 MHz

re

2

VCE = 3 V, IC = 10 mA, f = 2 GHz 7.0 8.5

|

Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz

Notes 1.

Pulse Measurement: PW ≤ 350 Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

2.

s, Duty Cycle ≤ 2%

µ

method), with emitter connected to guard pin of capacitance meter.

Note 2

−−

75

−

0.4 0.7 pF

1.5 2.5 dB

0.1

150

−

A

µ

A

µ

GHz

dB

2

Data Sheet P14555EJ1V0DS00

(2) Q2

µµµµ

PA835TC

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain Bandwidth Product f Feedback Capacitance C Insertion Power Gain

CBO

EBO

FE

T

21e

S

|

VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mA

Note 1

VCE = 3 V, IC = 7 mA, f = 1 GHz 3.0 4.5 VCB = 3 V, IE = 0, f = 1 MHz

re

2

VCE = 3 V, IC = 7 mA, f = 1 GHz 7.0 9.0

|

Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz

Notes 1.

Pulse Measurement: PW ≤ 350 Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

2.

s, Duty Cycle ≤ 2%

µ

method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank FB

Marking 37 hFE Value of Q1 75 to 150 hFE Value of Q2 70 to 140

Note 2

−−

70

−

0.7 1.5 pF

1.2 2.5 dB

1.0

140

−

A

µ

A

µ

GHz

dB

Data Sheet P14555EJ1V0DS00

3

µµµµ

PA835TC

TYPICAL CHARACTERISTICS (TA = +25

Q1 Q2

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

2 Elements in total Free Air Free Air

230 200

(mW)

T

180

Per Element (Q1)

100

Total Power Dissipation P

0

0 50 100 150

Ambient Temperature TA (°C)

COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE

50

VCE = 3 V

40

(mA)

C

30

20

C)

°°°°

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

2 Elements in total

230 200

(mW)

T

Per Element (Q2)

100

Total Power Dissipation P

0

0 50 100 150

Ambient Temperature TA (°C)

COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE

20

VCE = 3 V

(mA)

C

10

Collector Current I

10

00

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE 20 18 16 14

(mA)

C

12 10

8 6

Collector Current I

4 2 0

123456

0

Collector to Emitter Voltage VCE (V)

0.5 1.0

IB = 160 A

µ

IB = 140 A

µ

IB = 120 A

µ

IB = 100 A

µ

IB = 80 A

µ

IB = 60 A

µ

IB = 40 A

µ

IB = 20 A

µ

Collector Current I

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

18 16 14

(mA)

C

12 10

8 6 4

Collector Current I

2 0

0

123456

Collector to Emitter Voltage VCE (V)

0.5 1.0

I

B

= 160 A

µ

IB = 140 A

µ

IB = 120 A

µ

IB = 100 A

µ

IB = 80 A

µ

IB = 60 A

µ

IB = 40 A

µ

IB = 20 A

µ

4

Data Sheet P14555EJ1V0DS00