NEC UPA834TF-T1, UPA834TF Datasheet

PRELIMINARY DATA SHEET

Silicon Transistor

µµµµ

PA834TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION PACKAGE DRAWINGS (Unit:mm)

The µPA834TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

FEATURES

•Low noise

Q1 : NF = 1.4 dB TYP., Q2 : NF = 1.2 dB TYP.

@f = 1 GHz, VCE = 3 V, IC = 7 mA

•High gain

Q1 : |S21e|

@f = 1 GHz, V

•6-pin thin-type small mini mold package

•2 different transistors on-chip (2SC4227, 2SC4226)

2

= 12.0 dB TYP. Q2 : |S21e|2 = 9.0 dB TYP.

CE

= 3 V, IC = 7 mA

ON-CHIP TRANSISTORS

1.30

2.00±0.2

0.60±0.1

0.65

0.45

2.10±0.1

1.25±0.1

V27

321

0 to 0.1

456

+0.1

−0.05

0.22

0.13±0.05

Q1 Q2

3-pin small mini mold part No. 2SC4227 2SC4226

The µPA831TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE

µ

PA834TF

µ

PA834TF-T1

Caution is required concerning excess input, such as from static electricity, because the high-frequency process is used for this device.

Loose products

(50 pcs)

Taping products

(3 kpcs/reel)

The information in this document is subject to change without notice.

8-mm wide embossed tape. Pin 6 (Q1 Base), pin 5 (Q2 Emitter), and pin 4 (Q2 Base) face perforated side of tape.

PIN CONFIGURATION (Top View)

B1

E2 B2

654

Q1 Q2

321

C1 E1 C2

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

Document No. P12726EJ1V0DS00 (1st edition) Date Published August 1997 N Printed in Japan

1997©

µµµµ

PA834TF

ABSOLUTE MAXIMUM RATINGS (TA = 25

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Total power dissipation P

Junction temperature T Storage temperature T

Note

110 mW must not be exceeded for 1 element.

(1) Q1

CBO

CEO

EBO

C

T

j

stg

ELECTRICAL CHARACTERISTICS

°°°°

C)

RATING

Q1 Q2

20 20 V 10 12 V

1.5 3 V 65 100 mA

150 in 1 element 150 in 1 element mW

200 in 2 elements

Note

150 150

−

65 to +150

UNITSYMBOLPARAMETER

°

C

°

C

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector cutoff current I Emitter cutoff current I DC current gain h Gain bandwidth product f Feedback capacitance C Insertion power gain

CBO

EBO

FE

T

|

21e

S

VCB = 10 V, IE = 0 0.8 VEB = 1 V, IC = 0 0.8 VCE = 3 V, IC = 7 mA

Note 1

70 150 VCE = 3 V, IC = 7 mA, f = 1 GHz 4.5 7.0 GHz VCB = 3 V, IE = 0, f = 1 MHz

re

2

|

VCE = 3 V, IC = 7 mA, f = 1 GHz 10 12 dB

Note 2

0.45 0.9 pF

Noise figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz 1.4 2.7 dB

Notes 1.

Pulse measurement: PW ≤ 350 Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

2.

s, Duty cycle ≤ 2%

µ

method), with emitter connected to guard pin of capacitance meter.

µ

A

µ

A

2

µµµµ

PA834TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector cutoff current I Emitter cutoff current I DC current gain h Gain bandwidth product f Feedback capacitance C Insertion power gain Noise figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz 1.2 2.5 dB

CBO

EBO

FE

T

|

21e

S

VCB = 10 V, IE = 0 1 VEB = 1 V, IC = 0 1 VCE = 3 V, IC = 7 mA

Note 1

100 145 VCE = 3 V, IC = 7 mA, f = 1 GHz 3.0 4.5 GHz VCB = 3 V, IE = 0, f = 1 MHz

re

2

|

VCE = 3 V, IC = 7 mA, f = 1 GHz 7 9 dB

Note 2

0.7 1.5 pF

µ

A

µ

A

Notes 1.

Pulse measurement: PW ≤ 350 Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

2.

method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank FB Marking V27 hFE value of Q1 70 to 150 hFE value of Q2 100 to 145

s, Duty cycle ≤ 2%

µ

3

µµµµ

PA834TF

TYPICAL CHARACTERISTICS (TA = 25

°°°°

C)

Q1 Q2

Total Power Dissipation vs. Ambient Temperature

Free Air Free Air

200

(mW)

T

Q1 + Q2 total

100

Total power dissipation P

0 50 100

Ambient temperature T

Q1 when using 1 element

Q1 when using 2 elements

A

(°C)

150

200

(mW)

T

100

Total power dissipation P

0 50 100 150

Ambient temperature T

Q1 + Q2 total

Q2 when using 1 element

Q2 when using 2 elements

A

Collector Current vs. Collector to Emitter Voltage Collector Current vs. Collector to Emitter Voltage

25

I

B =

µ

160 A

140 A

20

(mA)

C

15

10

5

Collector current I

160 A

140

120

100

80

60

40

I

B =

20

µ

A

µ

A

µ

A

µ

A

µ

A

µ

A

µ

A

20

(mA)

C

15

10

5

Collector current I

(°C)

µ

120 A

µ

100 A

µ

80 A

µ

60 A

µ

40 A

µ µ

20 A

0

Collector to emitter voltage VCE (V)

Collector Current vs. DC Base Voltage Collector Current vs. DC Base Voltage

20

V

CE

= 3 V

(mA)

C

10

Collector current I

0

0.5 1.0

DC base voltage V

0

510

Collector to emitter voltage VCE (V)

20

V

CE

= 3 V

(mA)

C

10

Collector current I

0

BE

(V)

DC base voltage VBE (V)

0.5 1.0

4