NEC UPA833TF-T1, UPA833TF Datasheet

PRELIMINARY DATA SHEET

Silicon Transistor

µµµµ

PA833TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION PACKAGE DRAWINGS (Unit:mm)

The µPA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

FEATURES

•Low noise

Q1 : NF = 1.7 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA

•High gain

Q1 : |S

Q2 : |S

•6-pin thin-type small mini mold package

•2 different transistors on-chip (2SC5193, 2SC4959)

2

21e

|

= 3.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA

2

21e

|

= 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA

ON-CHIP TRANSISTORS

1.30

2.00±0.2

0.60±0.1

0.65

0.45

2.10±0.1

1.25±0.1

V44

321

0 to 0.1

456

+0.1

−0.05

0.22

0.13±0.05

Q1 Q2

3-pin small mini mold part No. 2SC5193 2SC4959

The µPA836TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE

µ

PA833TF

µ

PA833TF-T1

Caution is required concerning excess input, such as from static electricity, because the high-frequency process is used for this device.

Loose products

(50 pcs)

Taping products

(3 kpcs/reel)

The information in this document is subject to change without notice.

8-mm wide embossed tape. Pin 6 (Q1 Base), pin 5 (Q2 Emitter), and pin 4 (Q2 Base) face perforated side of tape.

PIN CONFIGURATION (Top View)

B1

E2 B2

654

Q1 Q2

321

C1 E1 C2

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

Document No. P12725EJ1V0DS00 (1st edition) Date Published August 1997 N Printed in Japan

1997©

µµµµ

PA833TF

ABSOLUTE MAXIMUM RATINGS (TA = 25

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Total power dissipation P

Junction temperature T Storage temperature T

Note

110 mW must not be exceeded for 1 element.

(1) Q1

CBO

CEO

EBO

C

T

j

stg

ELECTRICAL CHARACTERISTICS

°°°°

C)

RATING

Q1 Q2

99V 66V 22V

100 30 mA

150 in 1 element 150 in 1 element mW

200 in 2 elements

Note

150 150

−

65 to +150

UNITSYMBOLPARAMETER

°

C

°

C

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT

Collector cutoff current I Emitter cutoff current I DC current gain h Gain bandwidth product (1) f Gain bandwidth product (2) f Feedback capacitance C Insertion power gain (1) Insertion power gain (2)

CBO

EBO

FE

T

|

21e

S

|

21e

S

VCB = 5 V, IE = 0 0.1 VEB = 1 V, IC = 0 0.1 VCE = 1 V, IC = 3 mA

Note 1

100 145 VCE = 1 V, IC = 3 mA, f = 2 GHz 4.0 4.5 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz 9.0 GHz VCB = 1 V, IE = 0, f = 1 MHz

re

2

|

VCE = 1 V, IC = 3 mA, f = 2 GHz 2.5 3.5 dB

2

|

VCE = 3 V, IC = 20 mA, f = 2 GHz 6.5 dB

Note 2

0.75 0.85 pF

Noise figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.7 2.5 dB Noise figure (2) NF VCE = 3 V, IC = 7 mA, f = 2 GHz 1.5 dB

Notes 1.

Pulse measurement: PW ≤ 350 Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

2.

s, Duty cycle ≤ 2%

µ

method), with emitter connected to guard pin of capacitance meter.

µ

A

µ

A

2

µµµµ

PA833TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector cutoff current I Emitter cutoff current I DC current gain h Gain bandwidth product f Feedback capacitance C Insertion power gain Noise figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 1.5 2.5 dB

CBO

EBO

FE

T

|

21e

S

VCB = 5 V, IE = 0 0.1 VEB = 1 V, IC = 0 0.1 VCE = 3 V, IC = 10 mA

Note 1

75 150 VCE = 3 V, IC = 10 mA, f = 2 GHz 12 GHz VCB = 3 V, IE = 0, f = 1 MHz

re

2

|

VCE = 3 V, IC = 10 mA, f = 2 GHz 7 8.5 dB

Note 2

0.4 0.7 pF

µ

A

µ

A

Notes 1.

Pulse measurement: PW ≤ 350 Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

2.

method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank FB Marking V44 hFE value of Q1 100 to 145 hFE value of Q2 75 to 150

s, Duty cycle ≤ 2%

µ

3

µµµµ

PA833TF

TYPICAL CHARACTERISTICS (TA = 25

Q1 Q2

Total Power Dissipation vs. Ambient Temperature

200

(mW)

T

2 elements in total

100

Total power dissipation P

0

50 100 150

Ambient temperature TA (˚C)

Collector Current vs. DC Base Voltage

100

V

CE

50

= 1 V

20 10

(mA)

5

C

2 1

0.5

0.2

0.1

Collector current I

0.05

0.02

0.01 0 0.5 1

DC base voltage V

Free Air

Q1 when using 1 element

Q1 when using 2 elements

BE

(V)

°°°°

C)

Total Power Dissipation vs. Ambient Temperature

Free Air

Q2 when using

200

(mW)

T

2 elements in total

1 element

Q2 when using

100

2 elements

Total power dissipation P

0 50 100 150

A

Ambient temperature T

(˚C)

Collector Current vs. DC Base Voltage

50

V

CE

= 3 V

40

(mA)

C

30

20

Collector current I

10

0

DC base voltage V

0.5 1.0

BE

(V)

Collector Current vs. Collector to Emitter Voltage

30

200 A 180 A

(mA)

C

20

160 A 140 A

120 A 100 A

10

Collector current I

IB = 20 A

0 123456

Collector to emitter voltage V

CE

4

µ µ µ µ

µ µ µ

80 A

µ

60 A

µ

40 A

(V)

Collector Current vs. Collector to Emitter Voltage

60

500 A

µ

50

(mA)

C

40

30

400 A

µ

300 A

µ

200 A

20

µ

B

= 100 A

Collector current I

10

I

µ

0 246

135

Collector to emitter voltage V

CE

(V)

Q1 Q2

µµµµ

PA833TF

DC Current Gain vs. Collector Current

200

VCE = 1 V

FE

100

DC current gain h

0

0.1 0.2 10.5 10 20 5025 Collector current IC (mA)

Gain Bandwidth Product vs. Collector Current

10

f = 2 GH

)

Z

(GH

T

Z

VCE = 1 V

5

100

DC Current Gain vs. Collector Current

200

FE

5 V

VCE = 3 V

100

DC current gain h

0

0.2 2

0.1

0.5 1 5 10 50 100

20

Collector current IC (mA)

Gain Bandwidth Product vs. Collector Current

14

)

Z

(GH

T

f = 2 GHz

12

10

8

5 V 3 V

VCE = 1 V

Gain bandwidth product f

0

1235710

Collector current IC (mA)

Insertion Power Gain vs. Collector Current

10

f = 2 GH

Z

VCE = 1 V

(dB)

2

21e

5

Insertion power gain S

0

1235710

Collector current IC (mA)

6

4

Gain bandwidth product f

2

0.5

12 510

Collector current IC (mA)

Insertion Power Gain vs. Collector Current

10

f = 2 GHz

(dB)

2

8

21e

6

4

Insertion power gain S

2

0.5

2

510

Collector current IC (mA)

20

VCE = 1 V

20

50

5 V 3 V

50

5