NEC UPA832TF-T1, UPA832TF Datasheet
PRELIMINARY DATA SHEET
Silicon Transistor
µµµµ
PA832TF
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
DESCRIPTION PACKAGE DRAWINGS (Unit:mm)
The µPA832TF has two different built-in transistors (Q1
and Q2) for low noise amplification in the VHF band to UHF
band.
FEATURES
•Low noise
Q1 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
Q2 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA
•High gain
Q1 : |S21e|
Q2 : |S21e|2 = 8.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA
•6-pin thin-type small mini mold package
•2 different transistors on-chip (2SC4226, 2SC4959)
2
= 9.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
ON-CHIP TRANSISTORS
1.30
2.00±0.2
0.60±0.1
0.65
0.65
0.45
2.10±0.1
1.25±0.1
V34
321
0 to 0.1
456
+0.1
−0.05
0.22
0.13±0.05
Q1 Q2
3-pin small mini mold part No. 2SC4226 2SC4959
The µPA835TF features the Q1 and Q2 in inverted positions.
ORDERING INFORMATION
PART NUMBER QUANTITY PACKING STYLE
µ
PA832TF
µ
PA832TF-T1
Caution is required concerning excess input, such as from static electricity, because the high-frequency
process is used for this device.
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
The information in this document is subject to change without notice.
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
PIN CONFIGURATION (Top View)
B1
E2 B2
654
Q1 Q2
321
C1 E1 C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Document No. P12724EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
1997©
µµµµ
PA832TF
ABSOLUTE MAXIMUM RATINGS (TA = 25
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
Note
110 mW must not be exceeded for 1 element.
(1) Q1
CBO
CEO
EBO
C
T
j
stg
ELECTRICAL CHARACTERISTICS
°°°°
C)
RATING
Q1 Q2
20 9 V
12 6 V
32V
100 30 mA
150 in 1 element 150 in 1 element mW
200 in 2 elements
Note
150 150
−
65 to +150
UNITSYMBOLPARAMETER
°
C
°
C
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector cutoff current I
Emitter cutoff current I
DC current gain h
Gain bandwidth product f
Feedback capacitance C
Insertion power gain
CBO
EBO
FE
T
|
21e
S
VCB = 10 V, IE = 0 1
VEB = 1 V, IC = 0 1
VCE = 3 V, IC = 7 mA
Note 1
100 145
VCE = 3 V, IC = 7 mA, f = 1 GHz 3.0 4.5 GHz
VCB = 3 V, IE = 0, f = 1 MHz
re
2
|
VCE = 3 V, IC = 7 mA, f = 1 GHz 7 9 dB
Note 2
0.7 1.5 pF
Noise figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz 1.2 2.5 dB
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
2.
s, Duty cycle ≤ 2%
µ
method), with emitter connected to guard pin of capacitance meter.
µ
A
µ
A
2
µµµµ
PA832TF
(2) Q2
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector cutoff current I
Emitter cutoff current I
DC current gain h
Gain bandwidth product f
Feedback capacitance C
Insertion power gain
Noise figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 1.5 2.5 dB
CBO
EBO
FE
T
|
21e
S
VCB = 5 V, IE = 0 0.1
VEB = 1 V, IC = 0 0.1
VCE = 3 V, IC = 10 mA
Note 1
75 150
VCE = 3 V, IC = 10 mA, f = 2 GHz 12 GHz
VCB = 3 V, IE = 0, f = 1 MHz
re
2
|
VCE = 3 V, IC = 10 mA, f = 2 GHz 7 8.5 dB
Note 2
0.4 0.7 pF
µ
A
µ
A
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
2.
method), with emitter connected to guard pin of capacitance meter.
hFE CLASSIFICATION
Rank FB
Marking V34
hFE value of Q1 100 to 145
hFE value of Q2 75 to 150
s, Duty cycle ≤ 2%
µ
3
µµµµ
PA832TF
TYPICAL CHARACTERISTICS (TA = 25
°°°°
C)
Q1 Q2
Total Power Dissipation vs. Ambient Temperature Total Power Dissipation vs. Ambient Temperature
2 elements in total
Free Air
200
(mW)
T
Q1 when using
1 element
Q1 when using
2 elements
100
Total power dissipation P
0 50 100 150
Ambient temperature T
Collector Current vs. DC Base Voltage
20
CE
= 3 V
V
A
(°C)
200
(mW)
T
100
Total power dissipation P
0
50 100 150
Ambient temperature T
Collector Current vs. DC Base Voltage
50
V
CE
= 3 V
2 elements in total
Free Air
Q2 when using
1 element
Q2 when using
2 elements
A
(°C)
40
(mA)
C
(mA)
C
30
10
Collector current I
0
0.5 1.0
DC base voltage
V
BE
(V)
Collector Current vs. Collector to Emitter Voltage
25
20
(mA)
C
15
10
5
Collector current I
0
Collector to emitter voltage V
510
µ
I
B
=
160
A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
20 A
CE
(V)
20
Collector current I
10
0
DC base voltage V
0.5 1.0
BE
(V)
Collector Current vs. Collector to Emitter Voltage
60
500 A
µ
50
(mA)
C
40
30
400 A
µ
300 A
µ
µ
200 A
20
µ
B
= 100 A
CE
I
(V)
Collector current I
10
0 246
135
Collector to emitter voltage V
4
Loading...