NEC UPA1800GR-9JG Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

PA1800

µµµµ

DESCRIPTION

The µPA1800 is a switching device which can be
driven directly by a 4.0-V power source.
The µPA1800 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.

FEATURES

Can be driven by a 4.0-V power source

•

Low on-state resistance

•

DS(on)1

= 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A)

R

DS(on)2

R

= 39 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)

DS(on)3

R

= 45 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)

ORDERING INFORMATION

PART NUMBER PACKAGE

PA1800GR-9JG Power TSSOP8

µ

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation

Note1

Note2

Channel Temperature T
Storage Temperature T

DSS

GSS

D(DC)

D(pulse)

I

P

ch

stg

T

85

14

3.15 ±0.15

3.0 ±0.1

0.65

0.27

30 V

20 V

±

5.0 A

±

20 A

±

2.0 W

150 °C

–55 to +150 °C

PACKAGE DRAWING (Unit : mm)

+0.03
–0.08

0.8 MAX.

1, 5, 8 :Drain
2, 3, 6, 7: Source
4 :Gate

±0.055

0.145

0.10 M

1.2 MAX.

1.0±0.05

0.1±0.05

6.4 ±0.2

4.4 ±0.1

+5°

3°

–3°

EQUIVALENT CIRCUIT

Drain

Gate

Gate
Protection
Diode

Source

0.5

0.6

1.0 ±0.2

Body
Diode

0.25

+0.15
–0.1

0.1

Notes 1.

Remark

PW ≤ 10 µs, Duty Cycle ≤ 1 %

2.

Mounted on ceramic substrate of 50 cm

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D11407EJ1V0DS00 (1st edition)
Date Published February 2000 NS CP(K)
Printed in Japan

2

x 1.1 mm

The mark ★ shows major revised points .

©

1999, 2000

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

★

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

µµµµ

PA1800

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V

DSS

VDS = 30 V, VGS = 0 V10

GSS

VGS = ±20 V, VDS = 0 V±10

GS(off)VDS

= 10 V, ID = 1 mA 1.0 1.41 2.0 V

A

µ

A

µ

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 3.0 A3.07.0S
Drain to Source On-state Resi stance R

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DS(on)1VGS

DS(on)2VGS

R

DS(on)3VGS

R

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

rr

= 10 V, ID = 3.0 A2027m
= 4.5 V, ID = 3.0 A2939m
= 4.0 V, ID = 3.0 A3245m

Ω
Ω
Ω

VDS = 10 V 680 pF
VGS = 0 V 470 pF
f = 1 MHz 170 pF
VDD = 15 V18ns
ID = 3.0 A70ns

GS(on)

V

= 10 V60ns

RG = 10

Ω

26 ns
VDD = 24 V23nC
ID = 5.0 A2nC
VGS = 10 V7nC

= 5.0 A, VGS = 0 V0.74V

IF = 5.0 A, VGS = 0 V
di/dt = 100 A/

s

µ

60 ns

80 nC

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

R

L

R

PG.

V

GS

0

τ = 1 s

µ

Duty Cycle ≤ 1 %

G

V

DD

τ

GS

V

Wave Form

I

D

Wave Form

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

V

GS

10 %

0

0

10 %

t

d(on)

90 %

t

on

t

r

I

D

90 %

V

GS

(on)

PG.

90 %

I

D

t

d(off)

10 %

t

f

t

off

IG = 2 mA

50 Ω

R

L

V

DD

2

Data Sheet D11407EJ1V0DS00

µµµµ

PA1800

TYPICAL CHARACTERISTICS (TA = 25

★

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

30

60

TA - Ambient Temperature -

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

20

Pulsed

V

GS

15

= 4.5 V

10

V

GS

- Drain Current - A

D

I

= 2.5 V

5

90

V

GS

120

˚C

= 4.0 V

C)

°°°°

FORWARD BIAS SAFE OPERATING AREA

100

150

V)

Limited

10

=

DS(on)

R

GS

10

(@V

1

- Drain Current - A

D

I

0.1

TA = 25˚C
Single Pulse
Mounted on Ceramic
Substrate of 50cm x 1.1 mm

0.01

0.1

DS

V

ID(pulse)

I

D(DC)

2

1

- Drain to Source Voltage - V

PW

=

1 ms

10

ms

100 ms

DC

10 100

TRANSFER CHARACTERISTICS

100

V

DS

= 10 V

10

1

= 125˚C

A

T

0.1

75˚C

- Drain Current - A

0.01

D

I

0.001

25˚C

−25˚C

0

0

0.2

V

DS

- Drain to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

2.0
VDS = 10 V

I

D

= 1 mA

1.5

1.0

- Gate to Source Cut-off Voltage - V

GS(off)

V

0.5

−50
T

ch

- Channel Temperature - ˚C

50 1000

0.8 1.00.4 0.6

0.0001

0.5

0

1 1.5

GS

- Gate to Source Voltage - V

V

2

2.5 3

FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT

100

DS

= 10 V

V

TA = −25

25

˚C

125

75

˚C

˚C

˚C

10

1

0.1

| - Forward Transfer Admittance - S

fs

| y

150

0.01

0.001

1 10 1000.01 0.1

ID - Drain Current - A

Data Sheet D11407EJ1V0DS00

3