NEC UPA1520BH Datasheet

DATA SHEET

3

2

1

4

5

6

7

8

9

10

ELECTRODE CONNECTION

2, 4, 6, 8
3, 5, 7, 9
1, 10

: Gate
: Drain
: Source

Compound Field Effect Power Transistor

N-CHANNEL POWER MOS FET ARRAY

SWITCHING USE

DESCRIPTION

The µPA1520B is N-channel Power MOS FET Array that
built in 4 circuits designed for solenoid, motor and lamp
driver.

µ

PA1520B

PACKAGE DIMENSIONS

in millimeters

26.8 MAX.

4.0

FEATURES

• 4 V driving is possible

• Large Current and Low On-state Resistance

D (DC) = ±2.0 A

I
RDS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A)

DS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A)

R

• Low Input Capacitance Ciss = 220 pF TYP.

ORDERING INFORMATION

Type Number Package

µ

PA1520BH 10 Pin SIP

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSS

Gate to Source Voltage VGSS

Drain Current (DC) ID

Drain Current (pulse) ID(pulse)

Total Power Dissipation PT1

Total Power Dissipation P

Channel Temperature TCH 150 °C

Storage Temperature Tstg –55 to +150 °C

Note 1
Note 2

(DC) ±2.0 A/unit

Note 3
Note 4
Note 5

T2

30 V

±20 V

±8.0 A/unit

28 W

3.5 W

10

2.5

1.4 0.6±0.1

1 1023456789

CONNECTION DIAGRAM

2.54

10 MIN.

1.4

0.5±0.1

Notes 1. V

Document No. G10598EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan

The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

GS = 0 2. VDS = 0

3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 4. 4 circuits, TC = 25 °C

3. 4 circuits, T

A = 25 °C

©

1995

µ

y Cy

PA1520B

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Leakage Current IDSS VDS = 30 V, VGS = 0 10
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Gate Cutoff Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 1.0 2.0 V
Forward Transfer Admittance | Yfs |VDS = 10 V, ID = 1.0 A 1.0 S
Drain to Source On-State Resistance

RDS(on)1 VGS = 10 V, ID = 1.0 A 0.10 0.17 Ω

RDS(on)2 VGS = 4.0 V, ID = 1.0 A 0.13 0.25 Ω
Input Capacitance Ciss VDS = 10 V, VGS = 0, f = 1.0 MHz 220 pF
Output Capacitance Coss 220 pF
Reverse Transfer Capacitance Crss 90 pF
Turn-on Delay Time td(on) ID = 1.0 A, VGS = 10 V, VDD = 15 V, 27 ns

.

.
Rise Time tr RL = 15 Ω 125 ns
Turn-off Delay Time td(off) 590 ns
Fall Time tr 500 ns
Total Gate Charge QG VGS = 10 V, ID = 2.0 A, VDD = 24 V 14 nC
Gate to Source Charge QGS 2nC
Gate to Drain Charge QGD 5.5 nC
Body Diode Forward Voltage VF(S-D) IF = 2.0 A, VGS = 0 1.0 V
Reverse Recovery Time trr IF = 2.0 A, VGS = 0, di/dt = 50 A/µs 640 ns
Reverse Recovery Charge Qrr 3.4

µ

A

µ

A

µ

C

Test Circuit 1 Switching Time

D.U.T.

R

G

RG = 10 Ω

0

V

GS

t = 1 s
Dut

PG.

t

µ

cle ≤ 1 %

Test Circuit 2 Gate Charge

D.U.T.

I

G

= 2 mA

PG.

50

Ω

V

R

L

V

Wave Form

V

DD

I

D

Wave Form

GS

GS

10 %

0

I

D

10 %

0

t

d (on)

L

R

V

DD

90 %

t

on

V

I

D

t

r

GS (on)

t

d (off)

t

90 %

off

90 %

10 %

t

f

2

CHARACTERISTICS (TA = 25 °C)

g

g

µ

PA1520B

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

6

NEC

PA1520BH

µ

5

4

Laed

Print
Circuit
Boad

4 Circuits operation
3 Circuits operation

2 Circuits operation

3

1 Circuit operation

2

1

PT - Total Power Dissipation - W

0

50 100 150

TA - Ambient Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

100

I

10

Limited (V

DS(on)

R

GS

= 10 V)

I

D(DC)

D(Pulse)

50 ms

1

ID - Drain Current - A

TC = 25 °C
Single Pulse

0.1

0.1

1 10 100

DS - Drain to Source Voltage - V

V

Under same
dissipation in
each circuit

PW = 1 ms

10 ms

100 ms

DC

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

30

4 Circuits operation

20

3 Circuits operation
2 Circuits operation

1 Circuit operation

10

TC is grease

PT - Total Power Dissipation - W

Temperature on back surface

0

50 100 150

TC - Case Temperature - °C

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C - Case Temperature - °C

T

Under same
dissipation in
each circuit

FORWARD TRANSFER CHARACTERISTICS

100

Pulsed

DS = 10 V

V

10

1.0

TA = 125 °C

75 °C
25 °C

-25 °C

ID - Drain Current - A

0.1

0246

GS- Gate to Source Volta

V

e - V

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

10

VGS = 20 V

8

10 V

6

4

ID - Drain Current - A

2

0

0.5

DS - Drain to Source Volta

V

1.0

VGS = 4 V

1.5

Pulsed

2.0

e - V

3