DATA SHEET
SILICON TRANSISTOR ARRAY
µ
PA1478
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1478 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
• Surge Absorber (Zener Diode) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number Package Quality Grade
µ
PA1478H 10 Pin SIP Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 31 ±4V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Surge Sustaining Energy E
Collector Current (DC) I
Collector Current (pulse) I
Total Power Dissipation P
Total Power Dissipation P
Junction Temperature T
Storage Temperature T
CEO 31 ±4V
EBO 7V
CEO (SUS) 40 mJ/unit
C(DC) ±2 A/unit
C(pulse)* ±4 A/unit
T1** 3.5 W
T2*** 28 W
J 150 ˚C
stg –55 to +150 ˚C
26.8 MAX.
10
2.5
1.4 0.6 ±0.1
1 2 3 4 5 6 7 8 9 10
3
2
1
(B)
R
1 R2
PACKAGE DIMENSION
(in millimeters)
4.0
2.54
CONNECTION DIAGRAM
579
468
(C)
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
R
R
(E)
.
1 = 10 kΩ
.
.
2 = 500 Ω
.
: Base (B)
: Collector (C)
: Emitter (E)
10 MIN.
1.4
0.5 ±0.1
10
* PW ≤ 300
µ
s, Duty Cycle ≤ 10 %
** 4 Circuits, T
*** 4 Circuits, T
Document No. IC-3566
(O.D. No. IC-6634)
Date Published November 1994 P
Printed in Japan
a = 25 ˚C
c = 25 ˚C
The information in this document is subject to change without notice.
©
1994
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
g
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Leakage Current ICBO 10
Emitter Leakage Current IEBO 1 mA VEB = 5 V, IC = 0
Collector to Emitter VCEO(SUS) 27 31 35 V IC = 1 A,
Sustaining Voltage L = 3 mH
DC Current Gain hFE1
DC Current Gain hFE2
Collector Saturation Voltage VCE(sat)
Base Saturation Voltage VBE(sat)
Turn On Time ton 0.5
Storage Time tstg 3
Fall Time tf 1
*
1000 — VCE = 2 V, IC = 0.5 A
*
2000 30000 — VCE = 2 V, IC = 1 A
*
*
1.5 V IC = 1 A, IB = 1 mA
2 V IC = 1 A, IB = 1 mA
µ
A VCB = 20 V, IE = 0
µ
s
IC = 1 A
µ
µ
IB1 = –IB2 = 1 mA
s
s
.
VCC = 20 V, RL = 20 Ω
.
See test circuit
* PW ≤ 350 µs, Duty Cycle ≤ 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
µ
PA1478
.
.
.
L = 20 Ω
R
.
I
B1
IB2
IC
tf
.
V
CC = 20 V
.
Base Current
Wave Form
Collector
Current
Wave Form
90 %
10 %
t
on tst
VIN
PW
.
PW = 50 s
Duty Cycle ≤ 2 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
µ
.
I
IB2
BB = –5 V
V
IC
B1
T.U.T.
.
.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
µ
PA1478
DERATING CURVE OF SAFE
OPERATING AREA
100
80
60
S/b Limited
Dissipation Limited
40
20
dT - Percentage of Rated Current - %
0
50 100 150
C
- Case Temperature - ˚C
T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
NEC
µ
PA1478
4
3
2
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
10
SAFE OPERATING AREA
5
2
1
0.5
0.2
0.1
- Collector Current - A
C
I
0.05
0.02
Single Pulse
0.01
1
CE
- Collector to Emitter Voltage - V
V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
30
20
10
100 s
µ
300 s
µ
Dissipation
Limited
1 ms
50 ms
S/b
Limited
TYP.
CEO
V
5 10 50 100
20
4 Circuits Operation
3 Circuits Operation
2 Circuits Operation
1 Circuit Operation
- Total Power Dissipation - W
T
P
1
0
25 50 75 100 125 150
a
- Ambient Temperature - ˚C
T
DC CURRENT GAIN vs. COLLECTOR CURRENT
50000
20000
10000
5000
2000
- DC Current Gain
1000
FE
h
500
200
100
0.01
0.1 2.0 10
IC - Collector Current - A
V
CE
= 2.0 V
Pulsed
- Total Power Dissipation - W
T
P
0
25 50 75 100 125 150
C
- Case Temperature - ˚C
T
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
10
5.0
2.0
1.0
V
V
BE (sat)
CE (sat)
I
C/IB
= 1000
Pulsed
0.5
- Collector Saturation Voltage - V
- Base Saturation Voltage - V
0.2
CE (sat)
BE (sat)
V
V
5.00.02 0.05 1.00.2 0.5
0.1
0.2 1.0 5.0
0.5 2.0 10
C
- Collector Current - A
I
3
100
10
TRANSIENT THERMAL RESISTANCE
VCE ≤ 10 V
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
2.0
1.6
1.2
220
200
180
160
140
120
100
µ
PA1478
0.8
1
IC - Collector Current - A
0.4
Rth (j-c) - Transient Thermal Resistance - ˚C/W
0.1
0.1
1 10 100
PW - Pulse Width - ms
0
1.0 2.0 3.0 4.0 5.0
CE - Collector to Emitter Voltage - V
V
= 80 A
R
I
µ
4
µ
PA1478
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
5
[MEMO]
µ
PA1478
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
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