NEC PD4481161, PD4481181, PD4481321, PD4481361 DATA SHEET

查询UPD4481161GF-A65供应商查询UPD4481161GF-A65供应商
DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD4481161, 4481181, 4481321, 4481361
8M-BIT ZEROSBTM SRAM
FLOW THROUGH OPERATION
Description
The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a
262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
PD4481161, µPD4481181, µPD4481321 and µPD4481361 are optimized to eliminate dead cycles for read to
The
µ
write, or write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit
burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the
single clock input (CLK).
PD4481161, µPD4481181, µPD4481321 and µPD4481361 are suitable for applications which require
The
µ
synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State
(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes
normal operation.
PD4481161, µPD4481181, µPD4481321 and µPD4481361 are packaged in 100-pin PLASTIC LQFP with a
µ
The
1.4 mm package thickness for high density and low capacitive loading.
Features
Low voltage core supply : V
Synchronous operation
Operating temperature : T
100 percent bus utilization
Internally self-timed write control
Burst read / write : Interleaved burst and linear burst sequence
Fully registered inputs and outputs for flow through operation
All registers triggered off positive clock edge
3.3V or 2.5V LVTTL Compatible : All inputs and outputs
Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)
Asynchronous output enable : /G
Burst sequence selectable : MODE
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
Separate byte write enable : /BW1 to /BW4 (
Three chip enables for easy depth expansion
Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
= 3.3 ± 0.165 V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y)
DD
V
= 2.5 ± 0.125 V (-C75, -C85, -C75Y, -C85Y)
DD
= 0 to 70 °C (-A65, -A75, -A85, -C75, -C85)
A
TA = 40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)
PD4481321 and µPD4481361)
µ
/BW1 and /BW2 (µPD4481161 and µPD4481181)
Document No. M15561EJ3V0DS00 (3rd edition) Date Published December 2002 NS CP(K) Printed in Japan
The mark
shows major revised points.



2001
µ
PD4481161, 4481181, 4481321, 4481361
Ordering Information
Part number Access Clock Core Supply I/O Interface Operating Package
Time Frequency Voltage Temperature
ns MHz V °C
PD4481161GF-A65 6.5 133 3.3 ± 0.165 3.3 V LVTTL
µ
PD4481161GF-A75 7.5 117 3.3 V or 2.5 V LVTTL LQFP (14 x 20)
µ
PD4481161GF-A85 8.5 100
µ
PD4481181GF-A65 6.5 133 3.3 V LVTTL
µ
PD4481181GF-A75 7.5 117 3.3 V or 2.5 V LVTTL
µ
PD4481181GF-A85 8.5 100
µ
PD4481321GF-A65 6.5 133 3.3 V LVTTL
µ
PD4481321GF-A75 7.5 117 3.3 V or 2.5 V LVTTL
µ
PD4481321GF-A85 8.5 100
µ
PD4481361GF-A65 6.5 133 3.3 V LVTTL
µ
PD4481361GF-A75 7.5 117 3.3 V or 2.5 V LVTTL
µ
PD4481361GF-A85 8.5 100
µ
PD4481161GF-C75 7.5 117 2.5 ± 0.125 2.5 V LVTTL
µ
PD4481161GF-C85 8.5 100
µ
PD4481181GF-C75 7.5 117
µ
PD4481181GF-C85 8.5 100
µ
PD4481321GF-C75 7.5 117
µ
PD4481321GF-C85 8.5 100
µ
PD4481361GF-C75 7.5 117
µ
PD4481361GF-C85 8.5 100
µ
Note
Note
Note
Note
0 to 70 100-pin PLASTIC
(1/2)
Although 2.5V LVTTL interface can also be used, a performance becomes equivalent to -A75 (117 MHz).
Note
2
Data Sheet M15561EJ3V0DS
µ
PD4481161, 4481181, 4481321, 4481361
Part number Access Clock Core Supply I/O Interface Operating Package
Time Frequency Voltage Temperature
ns MHz V °C
PD4481161GF-A65Y 6.5 133 3.3 ± 0.165 3.3 V LVTTL
µ
PD4481161GF-A75Y 7.5 117 3.3 V or 2.5 V LVTTL LQFP (14 x 20)
µ
PD4481161GF-A85Y 8.5 100
µ
PD4481181GF-A65Y 6.5 133 3.3 V LVTTL
µ
PD4481181GF-A75Y 7.5 117 3.3 V or 2.5 V LVTTL
µ
PD4481181GF-A85Y 8.5 100
µ
PD4481321GF-A65Y 6.5 133 3.3 V LVTTL
µ
PD4481321GF-A75Y 7.5 117 3.3 V or 2.5 V LVTTL
µ
PD4481321GF-A85Y 8.5 100
µ
PD4481361GF-A65Y 6.5 133 3.3 V LVTTL
µ
PD4481361GF-A75Y 7.5 117 3.3 V or 2.5 V LVTTL
µ
PD4481361GF-A85Y 8.5 100
µ
PD4481161GF-C75Y 7.5 117 2.5 ± 0.125 2.5 V LVTTL
µ
PD4481161GF-C85Y 8.5 100
µ
PD4481181GF-C75Y 7.5 117
µ
PD4481181GF-C85Y 8.5 100
µ
PD4481321GF-C75Y 7.5 117
µ
PD4481321GF-C85Y 8.5 100
µ
PD4481361GF-C75Y 7.5 117
µ
PD4481361GF-C85Y 8.5 100
µ
Note
Note
Note
Note
40 to +85 100-pin PLASTIC
(2/2)
Although 2.5V LVTTL interface can also be used, a performance becomes equivalent to -A75Y (117 MHz).
Note
Data Sheet M15561EJ3V0DS
3
Pin Configurations
/××× indicates active low signal.
µ
PD4481161, 4481181, 4481321, 4481361
100-pin PLASTIC LQFP (14 ×××× 20)
[
µµµµ
PD4481161GF,
µµµµ
PD4481181GF]
Marking Side
NC
NC
NC
V
DD
V
SS
NC
NC
I/O9
I/O10
V
SS
V
DD
I/O11
I/O12
V
V
V
V
I/O13
I/O14
V
DD
V
SS
I/O15
I/O16
I/OP2, NC
NC
V
SS
V
DD
NC
NC
NC
A6A7/CE
CE2NCNC
/BW2
/BW1
/CE2
VDDVSSCLK
/WE
/CKE/GADVNCA17A8A9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
2
3
Q
Q
4
5
6
7
8
9
Q
Q
10
11
12
13
SS
DD
DD
SS
14
15
16
17
18
19
Q
Q
20
21
22
23
24
25
Q
Q
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A18
NC
NC
DD
Q
V
V
SS
Q
NC
I/OP1, NC
I/O8
I/O7
V
SS
Q
V
DD
Q
I/O6
I/O5
V
SS
V
SS
V
DD
ZZ
I/O4
I/O3
V
DD
Q
V
SS
Q
I/O2
I/O1
NC
NC
V
SS
Q
V
DD
Q
NC
NC
NC
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A5A4A3A2A1
A0
NC
NC
SS
V
MODE
Remark Refer to Package Drawing for the 1-pin index mark.
4
Data Sheet M15561EJ3V0DS
DD
NC
NC
V
A10
A11
A12
A13
A14
A15
A16
Pin Identifications
µ
PD4481161, 4481181, 4481321, 4481361
µµµµ
PD4481161GF,
[
Symbol Pin No. Description
A0 to A18 37, 36, 35, 34, 33, 32, 100, 99, 82, 81, Synchronous Address Input
I/O1 to I/O16 58, 59, 62, 63, 68, 69, 72, 73, 8, 9, 12, 13, Synchronous Data In,
I/OP1, NC
I/OP2, NC
ADV 85 Synchronous Address Load / Advance Input
/CE, CE2, /CE2 98, 97, 92 Synchronous Chip Enable Input
/WE 88 Synchronous Write Enable Input
/BW1, /BW2 93, 94 Synchronous Byte Write Enable Input
/G 86 Asynchronous Output Enable Input
CLK 89 Clock Input
/CKE 87 Synchronous Clock Enable Input
MODE 31 Asynchronous Burst Sequence Select Input
ZZ 64 Asynchronous Power Down State Input
DD
V
SS
V
VDDQ 4, 11, 20, 27, 54, 61, 70, 77 Output Buffer Power Supply
VSSQ 5, 10, 21, 26, 55, 60, 71, 76 Output Buffer Ground
NC 1, 2, 3, 6, 7, 25, 28, 29, 30, 38, 39, 42, 43, No Connection
Note
Note
µµµµ
PD4481181GF]
44, 45, 46, 47, 48, 49, 50, 83, 80
18, 19, 22, 23 Synchronous / Asynchronous Data Out
74 Synchronous Data In (Parity),
24 Synchronous / Asynchronous Data Out (Parity)
Have to tied to VDD or VSS during normal operation
15, 16, 41, 65, 91 Power Supply
14, 17, 40, 66, 67, 90 Ground
51, 52, 53, 56, 57, 75, 78, 79, 84, 95, 96
NC (No Connection) is used in the µPD4481161GF.
Note
I/OP1 and I/OP2 are used in the µPD4481181GF.
Data Sheet M15561EJ3V0DS
5
µ
PD4481161, 4481181, 4481321, 4481361
100-pin PLASTIC LQFP (14 ×××× 20)
I/OP3, NC
I/O17
I/O18
V
DD
V
SS
I/O19
I/O20
I/O21
I/O22
V
SS
V
DD
I/O23
I/O24
V
V
V
V
I/O25
I/O26
V
DD
V
SS
I/O27
I/O28
I/O29
I/O30
V
SS
V
DD
I/O31
I/O32
I/OP4, NC
µµµµ
[
PD4481321GF,
µµµµ
PD4481361GF]
Marking Side
A6A7/CE
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
2
3
Q
Q
4
5
6
7
8
9
Q
Q
10
11
12
13
SS
DD
DD
SS
14
15
16
17
18
19
Q
Q
20
21
22
23
24
25
Q
Q
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
CE2
/BW4
/BW3
/BW2
/BW1
/CE2
VDDVSSCLK
/WE
/CKE/GADVNCA17A8A9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/OP2, NC
I/O16
I/O15
DD
Q
V
V
SS
Q
I/O14
I/O13
I/O12
I/O11
V
SS
Q
V
DD
Q
I/O10
I/O9
V
SS
V
SS
V
DD
ZZ
I/O8
I/O7
V
DD
Q
V
SS
Q
I/O6
I/O5
I/O4
I/O3
V
SS
Q
DD
Q
V
I/O2
I/O1
I/OP1, NC
A5A4A3A2A1
A0
NC
NC
MODE
Remark Refer to Package Drawing for the1-pin index mark.
6
Data Sheet M15561EJ3V0DS
SS
DD
NC
V
NC
V
A10
A11
A12
A13
A14
A15
A16
µ
PD4481161, 4481181, 4481321, 4481361
µµµµ
PD4481321GF,
[
Symbol Pin No. Description
A0 to A17 37, 36, 35, 34, 33, 32, 100, 99, 82, 81, 44, Synchronous Address Input
I/O1 to I/O32 52, 53, 56, 57, 58, 59, 62, 63, 68, 69, 72, Synchronous Data In,
I/OP1, NC
I/OP2, NC
I/OP3, NC
I/OP4, NC
ADV 85 Synchronous Address Load / Advance Input
/CE, CE2, /CE2 98, 97, 92 Synchronous Chip Enable Input
/WE 88 Synchronous Write Enable Input
/BW1 to /BW4 93, 94, 95, 96 Synchronous Byte Write Enable Input
/G 86 Asynchronous Output Enable Input
CLK 89 Clock Input
/CKE 87 Synchronous Clock Enable Input
MODE 31 Asynchronous Burst Sequence Select Input
ZZ 64 Asynchronous Power Down State Input
DD
V
SS
V
VDDQ 4, 11, 20, 27, 54, 61, 70, 77 Output Buffer Power Supply
VSSQ 5, 10, 21, 26, 55, 60, 71, 76 Output Buffer Ground
NC 38, 39, 42, 43, 84 No Connection
Note
Note
Note
Note
µµµµ
PD4481361GF]
45, 46, 47, 48, 49, 50, 83
73, 74, 75, 78, 79, 2, 3, 6, 7, 8, 9, 12, 13, Synchronous / Asynchronous Data Out
18, 19, 22, 23, 24, 25, 28, 29
51 Synchronous Data In (Parity),
80 Synchronous / Asynchronous Data Out (Parity)
1
30
Have to tied to VDD or VSS during normal operation
15, 16, 41, 65, 91 Power Supply
14, 17, 40, 66, 67, 90 Ground
Note NC (No Connection) is used in the
I/OP1 to I/OP4 are used in the µPD4481361GF.
PD4481321GF.
µ
Data Sheet M15561EJ3V0DS
7
Block Diagrams
µ
PD4481161, 4481181, 4481321, 4481361
µµµµ
[
PD4481161,
A0 to A18
MODE
CLK
/CKE
ADV /BW1 /BW2
/WE
/G
/CE
CE2
/CE2
ZZ Power down control
µ
µ
PD4481181]
µ µ
K
Address register 0
Read
19 17
A1 A0
ADV
K
Write address register
Write registry and
data coherency
control logic
logic
Burst
logic
A1’ A0’
19
Write
drivers
19
19
Memory Cell Array
512 x 16 columns
(8,388,608 bits)
512 x 18 columns
(9,437,184 bits)
1,024 rows
Sense amplifiers
16/18
16/18
Data steering
Input register
16/18
E
Output buffers
I/O1 to I/O16 I/OP1, I/OP2
E
16/18
Burst Sequence
µµµµ
[
PD4481161,
Interleaved Burst Sequence Table (MODE = V
External Address A18 to A2, A1, A0
1st Burst Address A18 to A2, A1, /A0
2nd Burst Address A18 to A2, /A1, A0
3rd Burst Address A18 to A2, /A1, /A0
µ
µ
PD4481181]
µ µ
DD
)
Linear Burst Sequence Table (MODE = VSS)
External Address A18 to A2, 0, 0 A18 to A2, 0, 1 A18 to A2, 1, 0 A18 to A2, 1, 1
1st Burst Address A18 to A2, 0, 1 A18 to A2, 1, 0 A18 to A2, 1, 1 A18 to A2, 0, 0
2nd Burst Address A18 to A2, 1, 0 A18 to A2, 1, 1 A18 to A2, 0, 0 A18 to A2, 0, 1
3rd Burst Address A18 to A2, 1, 1 A18 to A2, 0, 0 A18 to A2, 0, 1 A18 to A2, 1, 0
8
Data Sheet M15561EJ3V0DS
µ
PD4481161, 4481181, 4481321, 4481361
µµµµ
[
PD4481321,
A0 to A17
MODE
CLK
/CKE
ADV /BW1 /BW2 /BW3 /BW4
/WE
/G
/CE
CE2
/CE2
ZZ Power down control
µ
µ
PD4481361]
µ µ
K
Address register 0
18 16
A1 A0
ADV
K
Write address register
Write registry and
data coherency
control logic
Read
logic
Burst logic
A1 A0
18
Write
drivers
18
18
Memory Cell Array
1,024 rows
256 x 32 columns
(8,388,608 bits)
256 x 36 columns
(9,437,184 bits)
Sense amplifiers
32/36
32/36
Data steering
Input register
32/36
E
Output buffers
I/O1 to I/O32 I/OP1 to I/OP4
E
32/36
µµµµ
[
PD4481321,
Interleaved Burst Sequence Table (MODE = V
µ
µ
PD4481361]
µ µ
DD
)
External Address A17 to A2, A1, A0
1st Burst Address A17 to A2, A1, /A0
2nd Burst Address A17 to A2, /A1, A0
3rd Burst Address A17 to A2, /A1, /A0
Linear Burst Sequence Table (MODE = VSS)
External Address A17 to A2, 0, 0 A17 to A2, 0, 1 A17 to A2, 1, 0 A17 to A2, 1, 1
1st Burst Address A17 to A2, 0, 1 A17 to A2, 1, 0 A17 to A2, 1, 1 A17 to A2, 0, 0
2nd Burst Address A17 to A2, 1, 0 A17 to A2, 1, 1 A17 to A2, 0, 0 A17 to A2, 0, 1
3rd Burst Address A17 to A2, 1, 1 A17 to A2, 0, 0 A17 to A2, 0, 1 A17 to A2, 1, 0
Data Sheet M15561EJ3V0DS
9
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