NEC PA1724 DATA SHEET
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PA1724
µµµµ
★
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
The µPA1724 is N-Channel MOS Field Effect
Transistor designed for power management
85
applications of notebook computers and so on.
FEATURES
2.5-V gate drive and low on-resistance
•
DS(on)1
R
= 11.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)
DS(on)2
R
★
•
•
•
= 12.0 mΩ MAX. (VGS = 4.0 V, ID = 5.0 A)
DS(on)3
R
= 15.0 mΩ MAX. (VGS = 2.5 V, ID = 5.0 A)
iss
Low C
iss
: C
= 1850 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
1.8 MAX.
14
5.37 MAX.
1.44
1.27
0.40
0.05 MIN.
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1724G Power SOP8
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V
DS
= 0 V) V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Note1
A
= 25°C)
Note2
Channel Temperature T
Storage Temperature T
DSS
GSS
D(DC)
D(pulse)
I
P
stg
T
ch
–55 to +150 °C
20 V
±12 V
±10 A
±40 A
2.0 W
150 °C
0.78 MAX.
+0.10
–0.05
; Source
1,2,3
; Gate
4
; Drain
5,6,7,8
6.0 ±0.3
4.4
+0.10
–0.05
0.15
0.12 M
0.5 ±0.2
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Source
0.8
0.10
Body
Diode
Notes 1.
Remark
PW ≤ 10
2.
Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
s, Duty Cycle ≤ 1 %
µ
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14048EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1999, 2000
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1724
Drain to Source On-state Resi stance R
★
Gate to Source Cut-off Voltage V
DS(on)1VGS
DS(on)2VGS
R
DS(on)3VGS
R
GS(off)VDS
= 4.5 V, ID = 5.0 A 8.6 11.0 m
= 4.0 V, ID = 5.0 A 8.8 12.0 m
= 2.5 V, ID = 5.0 A 11.0 15.0 m
= 10 V, ID = 1 mA 0.5 0.84 1.5 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 5.0 A 10.0 19 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
★
Gate to Source Charge Q
★
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
DSS
VDS = 20 V, VGS = 0 V 10
GSS
VGS = ±12 V, VDS = 0 V ±10
iss
VDS = 10 V 1850 pF
oss
VGS = 0 V 610 pF
rss
f = 1 MHz 320 pF
d(on)
ID = 5.0 A 43 ns
r
GS(on)
V
= 4.5 V 170 ns
d(off)
VDD = 10 V 90 ns
f
RG = 10
G
ID = 10 A 18 nC
GS
VDD = 16 V 3.2 nC
GD
VGS = 4.5 V 7.8 nC
F(S-D)IF
rr
IF = 10 A, VGS = 0 V 45 ns
Ω
= 10 A, VGS = 0 V 0.78 V
130 ns
Ω
Ω
Ω
A
µ
A
µ
Reverse Recovery Charge Q
rr
di/dt = 100 A / µs40nC
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
IG = 2 mA
50 Ω
D.U.T.
R
L
V
DD
PG.
V
GS
RG = 10 Ω
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
R
G
D.U.T.
V
L
R
V
Wave Form
V
DD
I
D
Wave Form
GS
GS
0
10 %
V
GS(on)
90 %
PG.
90 %
D
I
10 %
0
t
r
t
d(on)
t
on
90 %
I
D
t
d(off)
10 %
t
f
t
off
2
Data Sheet G14048EJ1V0DS00
★
TYPICAL CHARACTERISTICS (TA = 25 °C)
µµµµ
PA1724
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
- Drain Current - A
D
I
0.01
0.001
0
GS -
Gate to Source Voltage - V
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30.0
25.0
20.0
15.0
V
GS
10.0
- Drain to Source On-state Resistance - mΩ
DS(on)
R
5.0
0.0
− 50
= 2.5 V
0 25 75 150
− 25
ch
- Channel Temperature - ˚C
T
TA = 125˚C
75˚C
25˚C
-25˚C
1
50 100 125
V
GS
2
= 4.5 V
Pulsed
VDS = 10 V
Pulsed
D
= 5.0 A
I
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
50
40
V
GS
= 4.5 V
30
V
GS
= 2.5 V
20
- Drain Current - A
D
I
V
GS
= 4.0 V
10
0
3
0.0
V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.4
0.2
DS
- Drain to Source Voltage - V
0.6
0.8
30
1.0
Pulsed
20
- Drain to Source On-state Resistance - mΩ
DS(on)
R
10
0
0
5
GS
- Gate to Source Voltage - V
V
I
D
=
5.0 A
I
D
=
2.0 A
10 15
- Drain to Source On-state Resistance - mΩ
DS(on)
R
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40
30
20
10
0
0.1
1
D
- Drain Current - A
I
V
GS
= 2.5 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
2
V
DS
D
I
= 10 V
= 1 mA
1.5
1
0.5
V
GS
= 4.0 V
V
GS
= 4.5 V
10
100
Data Sheet G14048EJ1V0DS00
- Gate to Source Cut-off Voltage - V
0
GS(off)
V
− 50
ch
- Channel Temperature - ˚C
T
50 1000 150
3
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